2SK2072-01L
Abstract: No abstract text available
Text: 2SK2072-01L,S N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2072-01L
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gs 069
Abstract: DR-6 2SK2072-01L
Text: 2SK2072-01L,S N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2072-01L
gs 069
DR-6
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Untitled
Abstract: No abstract text available
Text: 2SK2072-01L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)80# Minimum Operating Temp (øC)
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2SK2072-01L
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2SK2072-01L
Abstract: MOSFET 800V 3A
Text: 2SK2072-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings T-Pack S 1.5 Max 10 +0.5 4.5 ±0.2 1.32 +0.2 1.2 ±0.2 0.8 —0.1 Switching regulators UPS DC-DC converters General purpose power amplifier 0.4 +0.2 2.7 5.08 Applications
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2SK2072-01L
MOSFET 800V 3A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2072-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings T-Pack S 1.5 Max 10 +0.5 4.5 ±0.2 1.32 +0.2 1.2 ±0.2 0.8 —0.1 Switching regulators UPS DC-DC converters General purpose power amplifier 0.4 +0.2 2.7 5.08 Applications
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Original
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2SK2072-01L
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2072-01L,S N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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Original
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2SK2072-01L
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK2072-01S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)80# Minimum Operating Temp (øC)
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Original
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2SK2072-01S
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PDF
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mosfet equivalent
Abstract: No abstract text available
Text: FU JI eu.eiEirutìUK 2SK2072-01L,S FAP-IIA Series 6A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof T-PACK L T-PACK S lOi 04 JJ 5.08 Switching Regulators
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OCR Scan
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2SK2072-01L
mosfet equivalent
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PDF
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A2293
Abstract: 20KX2 2SK2072-01L
Text: 2SK2072-01 L, S S IP M O S 8 F U JI N-CHANNEL SILICON POWER MOS-FET m o s -f e t pow er FAP-IIA SERIES Outline Drawings • Features • High speed sw itching • Low on-resistance • No secondary breakdow n • Low driving p o w e r • High voltage ir-
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OCR Scan
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2SK2072-01L,
20KX2)
0DD31S1
A2293
20KX2
2SK2072-01L
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PDF
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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PDF
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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OCR Scan
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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PDF
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Untitled
Abstract: No abstract text available
Text: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01
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OCR Scan
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2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01
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OCR Scan
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2SK2518-01MR
2SK2250-01L
2SK22S1-01
2SK2292-01L
2SK2099-01
2SK2253-01MR
2SK22S2-01L
2SK22S5-01MR
2SK2254-01L
2SK2256-01
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PDF
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2SK1937
Abstract: No abstract text available
Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass
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OCR Scan
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2SK2518-01MR
2SK2918-01MR
2SK2251-01
T0-220F15
O-220AB
O-220F15
2SK1937
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 Q 7 2 - Q 1 L . S SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change w ithout notice. DATE NAME APPROVED F u ji E le c tr ic DRAWN i „ •■■* CHECKED
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OCR Scan
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2SK2072-01L,
2SK2072-01S
0257-R-004a
0257-R-003a
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PDF
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2SK1101-01M
Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
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PDF
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2SK2072-01L
Abstract: 2SK2072-01S
Text: SPECIFICATION DEV I CE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 Q 7 2 - Q 1 L . S SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE N AM E APPROVED Fuji Electric Codici. DRAWN o CHECKED . X ID ?o 1/
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OCR Scan
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2SK2072-01L,
2SK2072-01S
0257-R-004a
0257-R-003a
2SK2072-01L
2SK2072-01S
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PDF
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2SK1014-01
Abstract: 2SK151
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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2SK1006-01M
2SK1007-01
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2SK1013-01
2SK1015-01
2SK1916-01
2SK1017-01
2SK1014-01
2SK151
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PDF
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2sk2255-01mr
Abstract: 2SK2082 2SK194 2SK1941-01R
Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S
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OCR Scan
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2SK2518-01MR
2SK2250-01L
2SK2251-01
2SK2292-01L
2SK2099-01
2SK2253-01
2SK2252-01L
2SK2255-01
2SK2254-01
2SK2256-01
2sk2255-01mr
2SK2082
2SK194
2SK1941-01R
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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PDF
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TO-220F15
Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S
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OCR Scan
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2SK2518-01MR
O-220F15
2SK2250-01L
2SK22S1-01
O-220
2SK2292-01L
2SK2099-01
2SK2253-01MR
T0220F15
2SK2252-01L
TO-220F15
2SK1940
2SK2771
K1941
SK2002-01MR
2SK2082
2SK2082-01
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PDF
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2sk1507
Abstract: 2SK956 2SK1011 2SK1011-01 2SK1012 2SK1016 2SK1082 2SK1217 2SK1916 2SK962
Text: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
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OCR Scan
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2SK1006-01M
T0220F15
2SK1007-01
T0220
2SK1009-01
2SK1386-01
2SK1011-01
2SK1101-01M
2sk1507
2SK956
2SK1011
2SK1012
2SK1016
2SK1082
2SK1217
2SK1916
2SK962
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PDF
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