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    2SK2373ZE Search Results

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    2SK2373ZE Price and Stock

    Rochester Electronics LLC 2SK2373ZE-TL-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2373ZE-TL-E Bulk 902
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    Renesas Electronics Corporation 2SK2373ZE-TL-E

    Trans MOSFET N-CH Si 30V 0.2A 3-Pin MPAK T/R
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    Verical 2SK2373ZE-TL-E 33,000 1,103
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    2SK2373ZE-TL-E 3,000 1,103
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    Quest Components 2SK2373ZE-TL-E 2,075
    • 1 $0.55
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    Rochester Electronics 2SK2373ZE-TL-E 36,000 1
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    Hitachi Ltd 2SK2373ZE-TL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2373ZE-TL 9,316
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    2SK2373ZE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2373ZE-TL-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2373ZE-TR-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK2373ZE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2373ZE

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    ze 003 ic

    Abstract: 2SK2373 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE
    Text: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original     		2SK2373 REJ03G1009-0300 PLSP0003ZB-A ze 003 ic 2SK2373 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE PDF

    2SK2373ZE

    Abstract: No abstract text available
    Text: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original     		2SK2373 REJ03G1009-0300 PLSP0003ZB-A 2SK2373ZE PDF

    2SK2373

    Abstract: 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2373

    Abstract: 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE
    Text: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0200 Previous: ADE-208-268 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source.


    Original     		2SK2373 REJ03G1009-0200 ADE-208-268) PLSP0003ZB-A 2SK2373 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE PDF