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    2SK2553 Search Results

    2SK2553 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2553L-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 50A 10Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK2553STL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 50A 10Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    2SK2553 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2553 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2553 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2553 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2553 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK2553(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2553L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553L Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 50; Pch : 75; RDS (ON) typ. (ohm) @10V: 0.007; RDS (ON) typ. (ohm) @4V[4.5V]: 0.01; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3550; toff ( us) typ: 0.47; Package: LDPAK (L) Original PDF
    2SK2553L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2553S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2553S Renesas Technology SMD, High Speed Power Amplifier, 60V 50A 75W, MOS-FET N-Channel enhanced Original PDF
    2SK2553S Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 50; Pch : 75; RDS (ON) typ. (ohm) @10V: 0.007; RDS (ON) typ. (ohm) @4V[4.5V]: 0.01; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3550; toff ( us) typ: 0.47; Package: LDPAK (S)- (1) Original PDF
    2SK2553STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK2553 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2553

    Abstract: 2SK2553L-E 2SK2553STL-E PRSS0004AE-A REJ03G1015-1000
    Text: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1015-1000 (Previous: ADE-208-357H) Rev.10.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance RDS(on) = 7 mΩ typ. High speed switching


    Original     		PDF 2SK2553 REJ03G1015-1000 ADE-208-357H) PRSS0004AE-A PRSS0004AE-B 2SK2553L-E 2SK2553STL-E PRSS0004AE-A REJ03G1015-1000

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition January 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2553 ADE-208-357H 2SK2553 Hitachi DSA00279

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2553 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 2 3 3 D


    Original     		PDF 2SK2553 D-85622 Hitachi DSA002749

    2SK2529

    Abstract: 2SK2553 2SK25 Hitachi DSA00116
    Text: 2SK2553 Silicon N Channel MOS FET Application LDPAK High speed power switching 4 Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece 2 1 1 1 4 2 3 2 3 1. Gate 2. Drain 3. Source


    Original     		PDF 2SK2553 2SK2529 2SK2553 2SK25 Hitachi DSA00116

    1E32

    Abstract: No abstract text available
    Text: 2SK2553 Spice parameter .SUBCKT 2sk2553 1 2 3 * Model generated on May 11, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK2553 1e-32 41781e-18 00922e-05 1e-11 5e-09 60697e-09 XTI-05 1E32

    Untitled

    Abstract: No abstract text available
    Text: 2SK2553 Silicon N Channel MOS FET Application LDPAK High speed power switching 4 Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece 2 1 1 1 4 2 3 2 3 1. Gate 2. Drain 3. Source


    Original     		PDF 2SK2553

    2SK2529

    Abstract: 2SK2553 Hitachi DSA00238
    Text: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2553 ADE-208-357H 2SK2529 Hitachi DSA00238

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition Feb. 1, 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2553 ADE-208-357H Hitachi DSA002753

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2553 Silicon N-Channel MOS FET Nov. 1, 1996 Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 2 3 3 D


    Original     		PDF 2SK2553 D-85622 Hitachi DSA001652

    PE-50

    Abstract: Hitachi DSA002780
    Text: 2SK2553 Silicon N-Channel MOS FET ADE-208-357 G 8th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4


    Original     		PDF 2SK2553 ADE-208-357 D-85622 PE-50 Hitachi DSA002780

    Hitachi DSA00280

    Abstract: No abstract text available
    Text: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition Feb. 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2553 ADE-208-357H 2SK2553 D-85622 Hitachi DSA00280

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    2SK2529

    Abstract: 2SK2553
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    Untitled

    Abstract: No abstract text available
    Text: 2SK2553 Silicon N-Channel MOS FET HITACHI Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • • R ds o„ = 7 m il typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 2 3 3


    OCR Scan     		PDF 2SK2553 15tor

    2SK2529

    Abstract: 2SK2553 Hitachi Scans-001
    Text: 2SK2553 Silicon N-Channel MOS FET HITACHI Nov. 1, 1996 Application High speed power switching Features • Low on-resistance • • R ds o„ = 7 m il typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 2 3 3


    OCR Scan     		PDF 2SK2553 D-85622 2SK2529 2SK2553 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: A D E - 2 0 8 - 3 5 7 G Z 2SK2553 Silicon N Channel MOS FET 8th. Edition HITACHI Application High speed pow er switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V source


    OCR Scan     		PDF 2SK2553 2SK2553

    P-345

    Abstract: No abstract text available
    Text: 2SK2553 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • R ds,* = 7 m O typ. • H igh speed sw itching • 4 V gate drive device can be driven from 5 V source Outline 968 ADE-208-357 G 8th. Edition


    OCR Scan     		PDF 2SK2553 ADE-208-357 2SK2529. P-345

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44