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    Toshiba America Electronic Components 2SK2662(Q)

    Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS - Rail/Tube (Alt: 2SK2662(Q))
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    Avnet Americas 2SK2662(Q) Tube 50
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    Quest Components 2SK2662(Q) 7,265
    • 1 $1.655
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    • 100 $1.655
    • 1000 $1.655
    • 10000 $0.4965
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    2SK2662(Q) 21
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    Toshiba America Electronic Components 2SK2662(Q,T)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2662(Q,T) 1,121
    • 1 $1.655
    • 10 $1.655
    • 100 $0.8275
    • 1000 $0.662
    • 10000 $0.662
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    2SK2662 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2662 Toshiba N-Channel MOSFET Original PDF
    2SK2662 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2662 Toshiba Original PDF
    2SK2662 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2662 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2662 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SK2662(Q) Toshiba 2SK2662 - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS Original PDF
    2SK2662T Toshiba 2SK2662T - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS T/R Original PDF

    2SK2662 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2662

    Abstract: TRANSISTOR MAKING 2SK2662
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK2662 K2662 TRANSISTOR MAKING 2SK2662

    K2662

    Abstract: 2SK2662
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance z Low leakage current


    Original     		PDF 2SK2662 K2662 2SK2662

    2SK2662

    Abstract: No abstract text available
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK2662 2SK2662

    K2662

    Abstract: 2SK2662 2sk2662 equivalent
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK2662 K2662 2SK2662 2sk2662 equivalent

    K2662

    Abstract: No abstract text available
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK2662 K2662

    2SK2662

    Abstract: No abstract text available
    Text: 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2662 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK2662 2SK2662

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    2SK3562

    Abstract: 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS
    Text: VOLUME 131 東芝半導体情報誌アイ 2003年6月号 CONTENTS 6 INFORMATION •大分に最先端システムLSI製造棟を建設 .P2 ■次世代携帯機器向けの 新しい小型SDメモリーカード .P2 ■1メガビットMRAMを開発 .P2


    Original     		PDF 03-3457-3405FAX. 300mmLSI 200343500300mm 100m2 800m2 700m2 TC7MTX03FK 10msMAX) 2SK3562 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2662 DATA SILICON N CHANNEL MOS TYPE tt- M O S V (2SK2662) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK2662 2SK2662) 20kii) 2SK2662

    K2662

    Abstract: 2SK2662
    Text: T O SH IB A 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 +0.3 • •


    OCR Scan     		PDF 2SK2662 20kii) C2662 K2662 2SK2662

    2SK2662

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 2.7± 0.2


    OCR Scan     		PDF 2SK2662 2SK2662

    2SK2662

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(O N )- 1.350 (Typ.)


    OCR Scan     		PDF 2SK2662 2SK2662

    2SK2662

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ±0.3 r • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2662 2SK2662

    K2662

    Abstract: L122M 5Ft marking
    Text: TO SHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs|= 4.0S(Typ.)


    OCR Scan     		PDF 2SK2662 K2662 L122M 5Ft marking

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR 1 Ç \ C SILICON N CHANNEL MOS TYPE tt-MOSV 1 f% f% 1 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 •


    OCR Scan     		PDF 2SK2662 20kil)

    2SK2662

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2662 DATA SILICON N CHANNEL MOS TYPE tt- M O S V (2SK2662) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK2662 2SK2662) 20kii) 2SK2662