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    2SK273 Search Results

    2SK273 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2735STR-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 20A 28Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK2735L-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 20A 28Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
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    2SK273 Price and Stock

    ROHM Semiconductor 2SK2731T146

    MOSFET N-CH 30V 200MA SMT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2731T146 Digi-Reel 4,935 1
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    2SK2731T146 Cut Tape 4,935 1
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    2SK2731T146 Reel 3,000 3,000
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    Mouser Electronics 2SK2731T146
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    Rochester Electronics LLC 2SK2736-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2736-E Bulk 204
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    Rochester Electronics LLC 2SK2738-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2738-E Bulk 136
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    Renesas Electronics Corporation 2SK2730-E

    NCH POWER MOSFET 500V 25A 240MOHM TO-3P - Trays (Alt: 2SK2730-E)
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    Avnet Americas 2SK2730-E Tray 175
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    Renesas Electronics Corporation 2SK2735STR-E

    NCH POWER MOSFET 30V 20A 28MOHM DPAK - Tape and Reel (Alt: 2SK2735STR-E)
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    Avnet Americas 2SK2735STR-E Reel 3,000
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    Find more 2SK273 price and stock on Findchips.com

    2SK273 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK273 Unknown FET Data Book Scan PDF
    2SK2730 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2730 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2731 Kexin N-Channel MOSFET for Switching Original PDF
    2SK2731 ROHM Interface and switching (30V, 200mA) Original PDF
    2SK2731 ROHM TRANS MOSFET N-CH 30V 0.2A 3SC-59 Original PDF
    2SK2731 TY Semiconductor N-Channel MOSFET for Switching - SOT-23 Original PDF
    2SK2731T146 ROHM TRANS MOSFET N-CH 30V 0.2A 3SC-59 T/R Original PDF
    2SK2731T146 ROHM Interface and Switching (30 V, 200 mA) Original PDF
    2SK2733 Toshiba N-Channel MOSFET Original PDF
    2SK2733 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2733 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2733 Toshiba Original PDF
    2SK2733 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK2733 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) Scan PDF
    2SK2734 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2734 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2734 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2734 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2735 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK273 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 Z 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM


    Original     		2SK2736 ADE-208-544 220CFM D-85622 Hitachi DSA00276 PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2


    Original     		2SK2735 ADE-208-543 D-85622 Hitachi DSA00276 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2730 Silicon N Channel MOS FET High Speed Power Switching ADE-208-493 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain Flange 3. Source 2SK2730


    Original     		2SK2730 ADE-208-493 D-85622 Hitachi DSA002780 PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain


    Original     		2SK2737 ADE-208-533B 220CFM D-85622 Hitachi DSA00276 PDF

    MOSFET SC-59 power

    Abstract: 2SK2731 T146
    Text: 2SK2731 Transistors Interface and switching 30V, 200mA 2SK2731 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). ROHM : SMT3 E I A J : SC-59 zApplication Switching


    Original     		2SK2731 200mA) SC-59 MOSFET SC-59 power 2SK2731 T146 PDF

    2SK2734

    Abstract: Hitachi DSA00238
    Text: 2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 1st. Edition Features • Low on-resistance R DS on = 0.04Ω typ (at VGS = 10 V, I D = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. D G


    Original     		2SK2734 ADE-208-520 O-92MOD. 2SK2734 Hitachi DSA00238 PDF

    2SK2737

    Abstract: Hitachi DSA00238
    Text: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source


    Original     		2SK2737 ADE-208-533B 220CFM 2SK2737 Hitachi DSA00238 PDF

    K2733

    Abstract: 2-10P1B 2SK2733
    Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.)


    Original     		2SK2733 K2733 2-10P1B 2SK2733 PDF

    mosfet 10V 10A

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET 2SK2735S
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2735S Features TO-252 Low on-resistance typ. +0.15 1.50-0.15 RDS = 20 m +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 High speed switching 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max


    Original     		2SK2735S O-252 mosfet 10V 10A 5V GATE TO SOURCE VOLTAGE MOSFET 2SK2735S PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 Z 1st. Edition Jun 1997 Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2


    Original     		2SK2738 ADE-208-483 220CFM D-85622 Hitachi DSA00276 PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain


    Original     		2SK2737 ADE-208-533B 220CFM C4005-1835 D-85622 Hitachi DSA002749 PDF

    2SK2738

    Abstract: Silicon N Channel MOS FET High Speed Power Switching Hitachi DSA00338
    Text: 2SK2738 Silicon N Channel MOS FET High Speed Power Switching ADE-208-483 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ • High speed switching • 4V gate drive device can be driven from 5V source Outline 2SK2738 Absolute Maximum Ratings Ta = 25°C


    Original     		2SK2738 ADE-208-483 2SK2738 Silicon N Channel MOS FET High Speed Power Switching Hitachi DSA00338 PDF

    K2733

    Abstract: 2-10P1B 2SK2733
    Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)


    Original     		2SK2733 K2733 2-10P1B 2SK2733 PDF

    2SK2684

    Abstract: 2SK2736 Hitachi DSA00238
    Text: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS on = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate


    Original     		2SK2736 ADE-208-544 220CFM 2SK2684 2SK2736 Hitachi DSA00238 PDF

    2SK2730-E

    Abstract: 2SK2730 PRSS0004ZE-A SC-65
    Text: 2SK2730 Silicon N Channel MOS FET High Speed Power Switching REJ03G1028-0300 Previous: ADE-208-493A Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A


    Original     		2SK2730 REJ03G1028-0300 ADE-208-493A) PRSS0004ZE-A 2SK2730-E 2SK2730 PRSS0004ZE-A SC-65 PDF

    2SK2737

    Abstract: 2SK2737-E PRSS0003AE-A
    Text: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 Previous: ADE-208-533B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0003AE-A


    Original     		2SK2737 REJ03G1031-0400 ADE-208-533B) PRSS0003AE-A O-220C 2SK2737 2SK2737-E PRSS0003AE-A PDF

    all mosfet equivalent book

    Abstract: transistor equivalent book bc 149 mosfet catalogue 2SK2731 T146 free transistor equivalent book
    Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F eatu re s 1 ) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E xte rn a l dimensions (Units: mm) 2.9±0.2


    OCR Scan     		200mA) 2SK2731 SC-59 all mosfet equivalent book transistor equivalent book bc 149 mosfet catalogue 2SK2731 T146 free transistor equivalent book PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 300V, 16A 2SK2739 • F e a tu re s •E x te r n a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area), 4) G ate-source voltage guaranteed at Vgss = ± 3 0 V 5) Easily designed drive circuits.


    OCR Scan     		2SK2739 PDF

    2SK2739

    Abstract: No abstract text available
    Text: Transistors Switching 300V, 16A 2SK2739 •F e a tu re s 1) Low on-res¡stance. 2) High-speed switching. 3) Wide SOA (safe operating area). External dimensions (Units: mm) 4) Gate-source voltage guaranteed at V gss = ± 3 0 V 5) Easily designed drive circuits.


    OCR Scan     		2SK2739 O-220FN 2SK2739 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2734 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-520 Z 1st. Edition May 1997 Features • Low on-resistance RDS(o]i) = 0.040 typ (at VGS = 10 V, ID= 2.5 A) • 4V gate drive devices. • Large current capacitance Id = 5 A Outline


    OCR Scan     		2SK2734 ADE-208-520 O-92MOD. D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-533B Z 3rd. Edition June 1, 1998 Features • Low on-resistance • R ds(o„) = 10 m il typ. 4V gate drive devices. • High speed switching Outline 2SK2737 Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		2SK2737 ADE-208-533B D-85622 PDF

    ld 1086 18

    Abstract: No abstract text available
    Text: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544


    OCR Scan     		2SK2736 ADE-208-544 -220C 2SK2684 ld 1086 18 PDF

    2SK273

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2 S K2 7 3 3 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan     		2SK2733 00//s^ 2SK273 PDF

    BL-5j

    Abstract: No abstract text available
    Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E x te rn a l dimensions (Units: mm) 2.9±0.2


    OCR Scan     		200mA) 2SK2731 SC-59 BL-5j PDF