2SK30 Search Results

Contextual Info: TOSHIBA 2SK3068 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt-M O S V 2SK3068 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE TO -220FL APPLICATIONS • • • • INDUSTRIAL APPLICATIONS

2SK303V4

Abstract: 2SK303V3 2sK303L 2SK303
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES „ * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion * Halogen Free

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

Contextual Info: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These

Contextual Info: IC MOSFET SMD Type Product specification 2SK3024 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15

K3090

Abstract: 2SK3090 78hg
Contextual Info: 2SK3090 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK3090 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 16mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 26S (標準)

Contextual Info: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.

MJ10050

Abstract: 2SK3085 K3085 2-10P1B k308
Contextual Info: 2SK3085 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3085 ○ レギュレータDC-DC コンバータ、モータドライブ用 特 • 単位: mm 長 : RDS (ON) = 1.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)

EN8624

Abstract: 2SK3095LS
Contextual Info: 2SK3095LS Ordering number : EN8624 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3095LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.

K3050

Abstract: 2sk3050
Contextual Info: 2SK3050 Transistors 10V Drive Nch MOS FET 2SK3050 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

Contextual Info: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)

F16W60

Abstract: 2SK3012 F16W60VX2
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

2SK3074

Abstract: all mosfet vhf power amplifier transistor marking zg
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

2SK3043

Contextual Info: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2

Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

Contextual Info: T O S H IB A 2SK3090 2SK3090 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)

2SK3034

Contextual Info: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage

2SK3061

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching application.

2SK3055

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3055

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3079A Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 3.6V, 3.6V, 4.8V, 4.8V, 6.0V 6.0V Vgs = 0.5V ~ 1.8 8 V 1. Vgs = 0.5V ∼ 1.8V 0.05V

2SK3099LS

Abstract: K3099
Contextual Info: 2SK3099LS Ordering number : EN8628 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3099LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.

k3089

Abstract: 2SK3089 40IDP
Contextual Info: 2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3089 Chopper Regulator DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.)

2SA20

Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Contextual Info: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.