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    2SK3077A Search Results

    2SK3077A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3077A Toshiba 2SK3077 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-2K1D, 4 PIN, FET RF Small Signal Original PDF
    2SK3077A Toshiba High-frequency Junction FET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW • Gain: Gp ≥ 10.5dB • Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics


    Original     		PDF 2SK3077A

    2SK3077A

    Abstract: No abstract text available
    Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • Output power: Po ≥ 20.5dBmW · Gain: Gp ≥ 10.5dB · Drain Efficiency: ηD ≥ 50% Maximum Ratings Ta = 25°C Characteristics


    Original     		PDF 2SK3077A 2SK3077A

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm • • • Output power: Po > = 20.5dBmW Gain: Gp > = 10.5dB Drain Efficiency: ηD > = 50% Maximum Ratings Ta = 25°C Characteristics


    Original     		PDF 2SK3077A