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    2SK31 Search Results

    2SK31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3148-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 20A 60Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3113-Z-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3Z, /Bag Visit Renesas Electronics Corporation
    2SK3110-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3155-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 15A 130Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3158-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 30A 45Mohm To-220Ab Visit Renesas Electronics Corporation
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    2SK31 Price and Stock

    Diodes Incorporated DMNH6042SK3-13

    MOSFET N-CH 60V 25A TO252
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    DigiKey DMNH6042SK3-13 Cut Tape 2,297 1
    • 1 $1.09
    • 10 $0.683
    • 100 $1.09
    • 1000 $0.31445
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    DMNH6042SK3-13 Digi-Reel 2,297 1
    • 1 $1.09
    • 10 $0.683
    • 100 $1.09
    • 1000 $0.31445
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    DMNH6042SK3-13 Reel 2,500
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    • 10000 $0.2792
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    Avnet Americas DMNH6042SK3-13 Reel 16 Weeks 2,500
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    Mouser Electronics DMNH6042SK3-13 109
    • 1 $0.99
    • 10 $0.639
    • 100 $0.43
    • 1000 $0.306
    • 10000 $0.27
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    Avnet Silica DMNH6042SK3-13 2,500 22 Weeks 2,500
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    New Advantage Corporation DMNH6042SK3-13 2,500 1
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    • 10000 $0.4236
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    Sanken Electric Co Ltd 2SK3199

    MOSFET N-CH 500V 5A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3199 Tube 3,750
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    Verical 2SK3199 6,480 32
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    • 100 $0.92
    • 1000 $0.8763
    • 10000 $0.8563
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    Rochester Electronics LLC 2SK3140-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3140-E Bulk 101
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    Rochester Electronics LLC 2SK3115-AZ

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3115-AZ Bulk 83
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    • 100 $3.62
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    Rochester Electronics LLC 2SK3119-TD-E

    NCH 2.5V DRIVE SERIES
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    DigiKey 2SK3119-TD-E Bulk 1,211
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    Find more 2SK31 price and stock on Findchips.com

    2SK31 Datasheets (341)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK31 Unknown FET Data Book Scan PDF
    2SK310 Hitachi Semiconductor SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) Scan PDF
    2SK310 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK310 Unknown FET Data Book Scan PDF
    2SK310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK3100 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK3101 Sanyo Semiconductor General-Purpose Switching Device Applications Original PDF
    2SK3101 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK3101LS Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3102-01R Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK3102-01R Unknown Power MOSFET, 600V 10A, MOS-FET N-Channel enhanced Scan PDF
    2SK3105 NEC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Original PDF
    2SK3105 NEC N-Channel MOS Field Effect Transistor for Switching Original PDF
    2SK3105-T1B NEC Nch enhancement type MOS FET Original PDF
    2SK3105-T2B NEC Nch enhancement type MOS FET Original PDF
    2SK3107 NEC N-Channel MOS Field Effect Transistor for High Speed Switching Original PDF
    2SK3107-T1 NEC Nch enhancement type MOS FET Original PDF
    2SK3107-T2 NEC Nch enhancement type MOS FET Original PDF
    2SK3108 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    ...

    2SK31 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3147S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		2SK3147S O-252 2SK3147S PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2


    Original     		2SK3109 O-263 PDF

    2SK3114 equivalent

    Abstract: 2sk3114 2SK3114 APPLICATION
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER


    Original     		2SK3114 2SK3114 O-220 O-220) O-220 2SK3114 equivalent 2SK3114 APPLICATION PDF

    2SK3110

    Abstract: d1333
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC


    Original     		2SK3110 2SK3110 O-220 O-220 d1333 PDF

    2SK3111

    Abstract: 2SK3111-S 2SK3111-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3111 TO-220AB 2SK3111-S TO-262 2SK3111-ZJ TO-263 features a low on-state resistance and excellent


    Original     		2SK3111 2SK3111 O-220AB 2SK3111-S O-262 2SK3111-ZJ O-263 2SK3111-S 2SK3111-ZJ MP-25 PDF

    D1806

    Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.


    Original     		2SK3113B 2SK3113B 2SK3113B-S15-AY -S27-AY O-251 D1806 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102 PDF

    K3128

    Abstract: 2SK3128
    Text: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)


    Original     		2SK3128 K3128 2SK3128 PDF

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3133 L , 2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching Target Specification ADE-208-720 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) =7mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source


    Original     		2SK3133 ADE-208-720 Hitachi DSA00279 PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain


    Original     		2SK3148 220FM Hitachi DSA002749 PDF

    2SK313

    Abstract: 2SK312 2SK313 FET HITACHI 2SK* TO-3 2sk312 hitachi
    Text: blE T> m 4 l4tíÍD50S DD13G3G 7 b 3 ihith 2SK312,2SK313-HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER 3 O • FEATURES • Low O n -R esistan ce. • H igh S peed S w itc h in g . • H igh C utoff Frequency.


    OCR Scan     		DD13G3Q 11-jWll 2SK312 2SK313 2SK313 2SK313 FET HITACHI 2SK* TO-3 2sk312 hitachi PDF

    2SK3132

    Abstract: K313 2SK313
    Text: T O S H IB A 2SK3132 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 32 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-3P (L) APPLICATIONS


    OCR Scan     		2SK3132 2SK3132 K313 2SK313 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 65 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220FM Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		2SK3153 O-220FM PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3135 L ,2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance • = 6 m ii typ. Low drive current • 4 V gate drive device can be driven from 5 V source R DS(on)


    OCR Scan     		2SK3135 ADE-208-695B PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSYI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS U nit in mm APPLICATIONS 15.9 MAX.


    OCR Scan     		2SK3128 PDF

    2SK3128

    Abstract: SC-65 mj 411 transistor
    Text: TO SH IBA 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.)


    OCR Scan     		2SK3128 2SK3128 SC-65 mj 411 transistor PDF

    2SK3131

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3131 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 31 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-3P (L) APPLICATIONS


    OCR Scan     		2SK3131 2SK3131 PDF

    2SK3176

    Abstract: SC-65
    Text: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		2SK3176 2SK3176 SC-65 PDF

    DIODE S4 45a

    Abstract: DIODE S4 92 2SK3127
    Text: TOSHIBA 2SK3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS


    OCR Scan     		2SK3127 O-220FL DIODE S4 45a DIODE S4 92 2SK3127 PDF

    HITACHI 2SK* TO-3

    Abstract: No abstract text available
    Text: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance R ds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -220A B Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		2SK3149 -220A HITACHI 2SK* TO-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II


    OCR Scan     		2SK3147 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3154 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-682A Z 2nd. Edition February 1999 Features • Low on-resistance R ds = 100 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		2SK3154 ADE-208-682A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • Rds = 45 m ii typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		2SK3148 PDF

    KD510

    Abstract: 2SK319 2SK320
    Text: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.


    OCR Scan     		2SK319 2SK320 449620b' 2SK319, KD510 2SK320 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR m— GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE t # • m t m m U H F-SH F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC


    OCR Scan     		2SK3179 Admitt510 PDF