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    2SK320 Search Results

    2SK320 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3204-T-AZ Renesas Electronics Corporation Switching N Channel MOSFET Visit Renesas Electronics Corporation
    2SK3209-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 25A 45Mohm To-220Fm Visit Renesas Electronics Corporation
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    2SK320 Price and Stock

    Toshiba America Electronic Components 2SK3205(T6L1HITJNQ

    Trans MOSFET N-CH Si 150V 5A 3-Pin(2+Tab) New PW-Mold
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    Verical 2SK3205(T6L1HITJNQ 13,932 30
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    2SK320 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK320 Hitachi Semiconductor SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) Scan PDF
    2SK320 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK320 Unknown FET Data Book Scan PDF
    2SK320 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3200 Sanken Electric TRANS MOSFET N-CH 500V 10A 3TO-220F Original PDF
    2SK3200 Sanken Electric MOSFET Selection Guide Original PDF
    2SK3200 Sanken Electric N-Channel MOSFET Original PDF
    2SK3201 Toshiba Original PDF
    2SK3203(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3203L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3203(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3203S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3204 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3204 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3205 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3205 Toshiba FETs - Nch 60V Original PDF
    2SK3205 Toshiba Original PDF
    2SK3205 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Power (L, 2)-Pi-MOS V) Scan PDF
    2SK3205 Toshiba Scan PDF
    2SK3207 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK320 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759 Z Target Specification, 1st. Edition Dec. 1, 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK3209 ADE-208-759 220FM Hitachi DSA002759

    Untitled

    Abstract: No abstract text available
    Text: 2SK320 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50‚ Minimum Operating Temp (øC)


    Original     		PDF 2SK320

    K3205

    Abstract: 2SK3205
    Text: 2SK3205 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK3205 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 0.36 Ω (標準)


    Original     		PDF 2SK3205 SC-64 K3205 2002/95/EC) K3205 2SK3205

    2SK3203

    Abstract: Hitachi DSA0076 dd 127 dd 127 d 2SK3203L
    Text: 2SK3203 L , 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3203 ADE-208-1384A Hitachi DSA0076 dd 127 dd 127 d 2SK3203L

    2SK3205

    Abstract: No abstract text available
    Text: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)


    Original     		PDF 2SK3205 2SK3205

    HITACHI DIODE

    Abstract: 2SK3207 Hitachi DSA00239
    Text: 2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A Z Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK3207 ADE-208-758A 220FM HITACHI DIODE 2SK3207 Hitachi DSA00239

    2SK3204

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • ORDERING INFORMATION DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. • PART NUMBER PACKAGE


    Original     		PDF 2SK3204 2SK3204 MP-10

    K3205

    Abstract: No abstract text available
    Text: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)


    Original     		PDF 2SK3205 K3205

    2SK3204

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3204 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3204


    Original     		PDF 2SK3204 2SK3204 MP-10

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    K3205

    Abstract: 2SK3205
    Text: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)


    Original     		PDF 2SK3205 K3205 2SK3205

    Hitachi DSA0076

    Abstract: 2SK3209
    Text: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759A Z Target Specification 2nd. Edition Mar. 2001 Features • Low on-resistance R DS = 40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK3209 ADE-208-759A 220FM Hitachi DSA0076 2SK3209

    2SK3200

    Abstract: FM20
    Text: 2SK3200 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±30 V ID ±10 A ±40 35 (Tc = 25ºC) ID (pulse) *1 PD min 500 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3200 FM100 2SK3200 FM20

    HITACHI DIODE

    Abstract: 2SK3207 Hitachi DSA00182 2sk32
    Text: 2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A Z Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance R DS = 70 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		PDF 2SK3207 ADE-208-758A 220FM O-220FM HITACHI DIODE 2SK3207 Hitachi DSA00182 2sk32

    2SK3200

    Abstract: FM20
    Text: 2SK3200 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±30 V ID ±10 A ±40 35 (Tc = 25ºC) ID (pulse) *1 PD min 500 Ratings typ I GSS I DSS (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3200 2SK3200 FM20

    2SK3204

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description The 2SK3204 is N-Channel MOS Field Effect Transistor designed for Package Drawing Unit : mm high current switching applications.


    Original     		PDF 2SK3204 2SK3204

    Untitled

    Abstract: No abstract text available
    Text: 2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.36 Ω (typ.)


    Original     		PDF 2SK3205

    M04723

    Abstract: No abstract text available
    Text: 2SK3203 Spice parameter .SUBCKT 2sk3203 1 2 3 * Model generated on May 26, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3203 1e-32 57058e-06 43463e-07 5e-09 9835e-10 M04723

    2SK3209

    Abstract: 2SK3209-E PRSS0003AD-A TO-220FMV
    Text: 2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 Previous: ADE-208-759A Target Specification Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3209 REJ03G1090-0300 ADE-208-759A) PRSS0003AD-A O-220FM) 2SK3209 2SK3209-E PRSS0003AD-A TO-220FMV

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3205

    Abstract: Transistor EAR - 3
    Text: TOSHIBA 2SK3205 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK3205 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS, DC-DC CONVERTER AND INDUSTRIAL APPLICATIONS Unit in mm MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK3205 VDD-120V, 2SK3205 Transistor EAR - 3

    KD510

    Abstract: 2SK319 2SK320
    Text: HI T A C H I /{ OPTO EL ECTRO NI CS > "44962Ö5 H I T A C H I / OPTOELECTRONICS! 73 DE I 44c][3205 mOlOOlM - • 73C 10014 D 2SK319,2SK320 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance.


    OCR Scan     		PDF 2SK319 2SK320 449620b' 2SK319, KD510 2SK320