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Panasonic Electronic Components 2SK3045 MOSFET N-CH 500V 2.5A TO220D-A1
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DigiKey	2SK3045	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SK3046 MOSFET N-CH 500V 7A TO220D-A1
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DigiKey	2SK3046	Bulk			500	1 - 10 - 100 - 1000 $1.19888 10000 $1.19888	Buy Now
Panasonic Electronic Components 2SK3048 MOSFET N-CH 600V 3A TO220D-A1
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DigiKey	2SK3048	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SK3047 MOSFET N-CH 800V 2A TO220D-A1
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DigiKey	2SK3047	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SK3044 MOSFET N-CH 450V 7A TO220D-A1
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DigiKey	2SK3044	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SK304 Datasheets (40)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK304	Sanyo Semiconductor	General-purpose amplifiers, impedance converters	Original	PDF
2SK304	Unknown	FET Data Book	Scan	PDF
2SK304	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SK304	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK304	Sanyo Semiconductor	Small Signal Junction FETS / MOSFETS	Scan	PDF
2SK304	Sanyo Semiconductor	Small Signal FETs	Scan	PDF
2SK304	Sanyo Semiconductor	Low-frequency Amp Applications	Scan	PDF
2SK304	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF
2SK3042	Panasonic	N-Channel Power F-MOS FET	Original	PDF
2SK3042	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3042	Panasonic	TRANS MOSFET N-CH 250V 7A 3TO-220D-A1	Original	PDF
2SK3043	Panasonic	TRANS MOSFET N-CH 450V 5A 3TO-220D-A1	Original	PDF
2SK3043	Panasonic	N-Channel Power F-MOS FET	Original	PDF
2SK3043	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF

2SK3043	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3044	Panasonic	TRANS MOSFET N-CH 450V 7A 3TO-220D-A1	Original	PDF
2SK3044	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3044	Panasonic	N-Channel Power F-MOS FET	Original	PDF
2SK3044	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3045	Panasonic	TRANS MOSFET N-CH 500V 2.5A 3TO-220D-A1	Original	PDF

2SK304 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK3043 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	PDF	2SK3043 100mJ O-220D 2SK3043
2SK3045 Abstract: DSA003714 Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2	Original	PDF	2SK3045 O-220D 2SK3045 DSA003714
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3046
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3045
k3047 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3047 k3047
5a diode Abstract: 2SK3042 Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 ■ Applications	Original	PDF	2SK3042 O-220D 5a diode 2SK3042
2SK3042 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm 9.9±0.3 3.0±0.5 15.0±0.5	Original	PDF	2SK3042 O-220D-A1 2SK3042
k3047 Abstract: 2SK3047 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ	Original	PDF	2002/95/EC) 2SK3047 k3047 2SK3047
2SK3045 Abstract: 15a diode Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3045 O-220D-A1 2SK3045 15a diode
2SK3048 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3048 O-220D-A1 2SK3048
2SK3042 Abstract: drain Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3042 O-220D-A1 2SK3042 drain
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3044
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3047 O-220D-A1 K3047
2SK304 Abstract: ITR00647 ITR00648 Text: 2SK304 注文コード No. N 0 8 5 0 F 三洋半導体データシート半導体ニューズ No.N850E をさしかえてください。 2SK304 N チャネル接合型シリコン電界効果トランジスタ低周波増幅用用途・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。	Original	PDF	2SK304 N850E IM/42594HO ITR00652 ITR00651 ITR00653 ITR00654 ITR00655 2SK304 ITR00647 ITR00648

K3046 Abstract: 2SK3046 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ	Original	PDF	2002/95/EC) 2SK3046 K3046 2SK3046
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3046
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed	Original	PDF	2002/95/EC) 2SK3045 O-220D-A1 K3045
2SK3048 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay	Original	PDF	2SK3048 O-220D 2SK3048
2SK3047 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2	Original	PDF	2SK3047 O-220D 2SK3047
2SK3044 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3044 130mJ O-220D-A1 2SK3044
k3044 Abstract: 2SK3044 Text: Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown	Original	PDF	2SK3044 k3044 2SK3044
2SK3049 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2SK3049 O-220D-A1 2SK3049
2sk4005 Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321	Original	PDF	2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
2SK304 Abstract: No abstract text available Text: Ordering n u m b e r:E N 850E No,850E II 2SK304 N-Channel Junction Silicon FET Low-Frequency Amp Applications Applications • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators. Absolute Maximum Ratings atTa = 25°C	OCR Scan	PDF	EN850E 2SK304 -10HA 2SK304

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2SK304 Datasheets (40)

2SK304 Datasheets Context Search

2SK3043

2SK3045

Untitled

Untitled

k3047

5a diode

2SK3042

k3047

2SK3045

2SK3048

2SK3042

Untitled

Untitled

2SK304

K3046

Untitled

Untitled

2SK3048

2SK3047

2SK3044

k3044

2SK3049

2sk4005

2SK304