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    2SK3365 Search Results

    2SK3365 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3365-Z-AZ Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 14Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation Buy
    2SK3365-AZ Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 14Mohm Mp-3/To-251 Visit Renesas Electronics Corporation
    2SK3365(0)-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 14Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation
    2SK3365-Z-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 14Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation
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    2SK3365 Price and Stock

    Renesas Electronics Corporation 2SK3365-Z-AZ

    2SK3365-Z - Small Signal Field-Effect Transistor, 30A, 30V, N-Channel MOSFET '
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    Rochester Electronics 2SK3365-Z-AZ 232 1
    • 1 $0.96
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    • 100 $0.9024
    • 1000 $0.816
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    Renesas Electronics Corporation 2SK3365

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Drain Current (Abs) (ID): 30 A; Transistor Element Material: SILICON;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SK3365 294
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    2SK3365 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3365 Kexin N-Channel MOSFET Original PDF
    2SK3365 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3365 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3365 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3365-Z NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3365-Z NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3365-Z-E1 NEC N-channel enhancement type Po MOS FET Original PDF
    2SK3365-Z-E2 NEC N-channel enhancement type Po MOS FET Original PDF

    2SK3365 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 MP-3 2SK3365-Z TO-252 (MP-3Z) designed for DC/DC converters application of notebook


    Original     		2SK3365 2SK3365 2SK3365-Z O-251 O-252 PDF

    2SK3365

    Abstract: 2SK3365-Z
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3365 N チャネル パワーMOS FET スイッチング用 2SK3365 は，N チャネル縦型 MOS FET で，スイッチング特性が優れており，ノート・ブック PC などの DC/DC


    Original     		2SK3365 2SK3365 O-251MP-3 2SK3365-Z O-252MP-3Z D14255JJ4V0DS00 D14255JJ4V0DS 2SK3365-Z PDF

    2SK3365

    Abstract: 2SK3365-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 2SK3365-Z TO-252 designed for DC/DC converters application of notebook


    Original     		2SK3365 2SK3365 O-251 2SK3365-Z O-252 2SK3365-Z PDF

    2SK3365

    Abstract: PF405
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3365 TO-252 MAX. VGS = 4 V, ID = 15A Low Ciss: Ciss = 1300 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 RDS(on)3 = 29m Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 15A)


    Original     		2SK3365 O-252 2SK3365 PF405 PDF

    2SK3365

    Abstract: 2SK3365-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 MP-3 2SK3365-Z TO-252 (MP-3Z) designed for DC/DC converters application of notebook


    Original     		2SK3365 2SK3365 O-251 2SK3365-Z O-252 2SK3365-Z PDF

    2SK3365

    Abstract: 2SK3365-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 2SK3365-Z TO-252 designed for DC/DC converters application of notebook


    Original     		2SK3365 2SK3365 O-251 2SK3365-Z O-252 2SK3365-Z PDF

    Untitled

    Abstract: No abstract text available
    Text: IC Transistors MOSFET SMD Type Product specification 2SK3365 TO-252 MAX. VGS = 4 V, ID = 15A Low Ciss: Ciss = 1300 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 RDS(on)3 = 29m Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15


    Original     		2SK3365 O-252 PDF

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


    Original     		O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326 PDF

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 PDF

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


    Original     		SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    MPA2733GR

    Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG PDF

    2SK3365

    Abstract: 2SK3365-Z
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		2SK3365 2SK3365 O-251MP-3 2SK3365-Z O-252MP-3Z D14255JJ4V0DS M8E02 2SK3365-Z PDF

    NEC 10F triac

    Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
    Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2


    Original     		G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272 PDF

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		/533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas PDF

    2SK3365

    Abstract: 2SK3365-Z
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    SC-95

    Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
    Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A PDF

    M2SK3295

    Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
    Text: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value


    Original     		O-220 2SK2499 2SK2826 2SK3355 PA1855 0V/23m 2SK3295 2SK3296 2SK3365 2SK3367 M2SK3295 M2SK3354 2SK2499 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707 PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 PDF

    N116922

    Abstract: M2SK3377 M2SK3385 44358 2SK33 m2sk3357 M2SK3366 M2SK3355 m04948 SPICE2G6
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		2SK33× 2SK3307 2SK3353 2SK3354 2SK3355 2SK3356 2SK3357 2SK3365 2SK3366 D15264JJ2V0IF002 N116922 M2SK3377 M2SK3385 44358 2SK33 m2sk3357 M2SK3366 M2SK3355 m04948 SPICE2G6 PDF

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


    Original     		D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 2SK3365-Z TO-252 designed for DC/DC converters application of notebook


    OCR Scan     		2SK3365 2SK3365 O-251 2SK3365-Z O-252 D14255EJ1V0DS00 PDF