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Rochester Electronics LLC 2SK3391JX RF MOSFET 13.7V UPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3391JX	Bulk			86	1 - 10 - 100 $3.52 1000 $3.52 10000 $3.52	Buy Now
Renesas Electronics Corporation 2SK3391JX01UL
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Bristol Electronics	2SK3391JX01UL		7,088		2	1 - 10 $2.184 100 $1.5681 1000 $1.3776 10000 $1.3776	Buy Now
Quest Components	2SK3391JX01UL		5,670			1 $4.5 10 $4.5 100 $4.5 1000 $4.5 10000 $1.575	Buy Now
Renesas Electronics Corporation 2SK3391JX 2SK3391 - RF Power Field-Effect Transistor, N-Channel MOSFET '
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Rochester Electronics	2SK3391JX		134,038		1	1 $3.38 10 $3.38 100 $3.18 1000 $2.87 10000 $2.87	Buy Now

2SK3391 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK3391		Hitachi Semiconductor	Silicon N Channel MOS FET		Original	PDF
2SK3391		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK3391		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK3391		Renesas Technology	Silicon N Channel MOS FET UHF Power Amplifier		Original	PDF
2SK3391JX		Renesas Technology			Original	PDF
2SK3391JXTL		Renesas Technology	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 17V 300MA UPAK		Original	PDF
2SK3391JXTL-E		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF

2SK3391 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting	Original	2SK3391 REJ03G0209-0300 PLZZ0004CA-A	PDF
2SK3391 Abstract: 2SK3391JX Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting	Original	2SK3391 REJ03G0209-0200Z ADE-208-847 2SK3391 2SK3391JX	PDF
2SK3391 Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440 Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting	Original	2SK3391 REJ03G0209-0300 PLZZ0004CA-A 2SK3391 2SK3391JXTL-E on 543 upak 319 0048 0 00 440	PDF
2SK3391 Abstract: DSA003644 Text: 2SK3391 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-847 Z 1st. Edition Aug. 2001 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd= 58 % min. (f = 836 MHz) • Compact package capable of surface mounting	Original	2SK3391 ADE-208-847 D-85622 D-85619 2SK3391 DSA003644	PDF
2SK3391 Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	D-85622 D-85619 2SK3391	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
lvc16244 Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List	Original	HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP	PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
2SK3391 Abstract: 2SK3391JXTL-E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as	PDF