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Toshiba America Electronic Components 2SK3399(Q) Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3399(Q)		50		50	1 - 10 - 100 $1.4497 1000 $1.4497 10000 $1.4497	Buy Now
Quest Components	2SK3399(Q)		40			1 $3.9 10 $2.4375 100 $2.145 1000 $2.145 10000 $2.145	Buy Now

2SK3399 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK3399	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK3399	Toshiba	SWITCHING REGULATOR APPLICATIONS	Scan	PDF
2SK3399(Q)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220FL	Original	PDF

2SK3399 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3399 Abstract: K3399 k339 Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) · High forward transfer admittance: \|Yfs\| = 5.2 S (typ) · Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)	Original	2SK3399 2SK3399 K3399 k339	PDF
K3399 Abstract: 2SK3399 Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 600 V)	Original	2SK3399 K3399 2SK3399	PDF
Untitled Abstract: No abstract text available Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)	Original	2SK3399	PDF
K3399 Abstract: k339 2SK3399 Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)	Original	2SK3399 K3399 k339 2SK3399	PDF
k3399 Abstract: No abstract text available Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)	Original	2SK3399 k3399	PDF
K3399 Abstract: 2SK3399 MJ10050 Text: 2SK3399 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV 2SK3399 ○ スイッチングレギュレータ用 • 単位: mm オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) • 順方向伝達アドミタンスが高い。: \|Yfs\| = 5.2 S (標準)	Original	2SK3399 2-10S1B K3399 2SK3399 MJ10050	PDF
K3399 Abstract: 2SK3399 Text: 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ) • Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)	Original	2SK3399 K3399 2SK3399	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
Toshiba TMPA8873 Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6	Original	SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
MOSFET TOSHIBA 2SK2917 Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6	Original	DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF

TA1343NG Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 Text: システムカタログシステムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理伝送処理	Original	p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Text: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
transistor compatible 2SK3569 Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler Text: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series	Original	TLP285/TLP781) TB6818FG/TB6819FG) SCE0024B SCE0024C transistor compatible 2SK3569 TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler	PDF
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	BCE0082B TPCA8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SK3566 equivalent Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent	PDF
2SK3399 Abstract: K3399 HC marking Text: TOSHIBA 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type jc-MOSV TE N TA TIVE 2SK3399 Switching Regulator Applications • • • • Unit in mm Low drain-source ON resistance? RDS (ON) = 0.54 iî (typ) High forward transfer admittance? lYfel = 5.2 S (typ)	OCR Scan	2SK3399 2SK3399 K3399 HC marking	PDF
2SK33 Abstract: m745 Text: SE P 2 5 '0 0 06:01 »CCT-FftX» HNO:05250258 < t a a lK ^ R^67361 M745 [A lt.] » 1 5 /0 1 / OUT:0001 T O S H I B A 2SK3399 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE * -MOSV 2SK3 3 9 9	OCR Scan	2SK3399 20kil) P017/017 TKY0808-T 2SK33 m745	PDF

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2SK3399 Search Results

2SK3399 Price and Stock

Toshiba America Electronic Components 2SK3399(Q)

2SK3399 Datasheets (3)

2SK3399 Datasheets Context Search

2SK3399

K3399

Untitled

K3399

k3399

K3399

K3399

5252 F 1009 4-pin

Toshiba TMPA8873

2SK2056

fqp60n06

STR-G6551

MOSFET TOSHIBA 2SK2917

2SK3567 equivalent

TA1343NG

2SK4207

IRF1830G

transistor compatible 2SK3569

TPCA*8064

GT30F124

transistor bc 245

2SK3566 equivalent

2SK3399

2SK33