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    Toshiba America Electronic Components 2SK3471(TE12L

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    2SK3471 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3471 Toshiba Original PDF
    2SK3471 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3471(TE12L,F) Toshiba 2SK3471 - Trans MOSFET N-CH 500V 0.5A 4-Pin(3+Tab) PW-Mini T/R Original PDF

    2SK3471 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 2SK3471 PDF

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 2SK3471 PDF

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3471 ○ スイッチングレギュレータDC-DC コンバータ用 • 単位: mm : RDS (ON) = 10 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.4 S (標準)


    Original     		2SK3471 SC-62 2SK3471 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 to150 PDF

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 2SK3471 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 PDF

    2SK3471

    Abstract: A1018
    Text: 2SK3471 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3471 ○ スイッチングレギュレータDC-DC コンバータ用 • 単位: mm : RDS (ON) = 10 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.4 S (標準)


    Original     		2SK3471 SC-62 2SK3471 A1018 PDF

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 2SK3471 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 10 Unit: mm (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 to150 PDF

    2SK3471

    Abstract: No abstract text available
    Text: 2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3471 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		2SK3471 2SK3471 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF