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    2SK3582 Search Results

    2SK3582 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK358/2 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK3582MFV Toshiba 2SK3582MFV - Junction FETs(Single) Original PDF
    2SK3582TK Toshiba Field Effect Transistor Silicon N Channel Junction Type For ECM Original PDF
    2SK3582TV Toshiba Silicon N Channel Junction Type For ECM Original PDF

    2SK3582 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3582TV

    Abstract: No abstract text available
    Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK3582TV 2SK3582TV

    2SK3582TK

    Abstract: 2SK3582
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C


    Original     		PDF 2SK3582TK 2SK3582TK 2SK3582

    2SK3582TV

    Abstract: No abstract text available
    Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)


    Original     		PDF 2SK3582TV 2SK3582TV

    2SK3582TK

    Abstract: ecm circuit
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3582TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range


    Original     		PDF 2SK3582TK 2SK3582TK ecm circuit

    Untitled

    Abstract: No abstract text available
    Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3582MFV

    2SK3582TK

    Abstract: maximum idss transistor 290A transistor transistor marking CG
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK3582TK 2SK3582TK maximum idss transistor 290A transistor transistor marking CG

    2SK3582CT

    Abstract: 2SK3582
    Text: 2SK3582CT 東芝ジャンクション FET シリコンNチャネル接合形 2SK3582CT エレクトレットコンデンサマイクロフォン用 ・1.0x0.6×0.38 mmt の CSP パッケージのため小型マイクロフォンに最適 ・減電圧特性に優れる


    Original     		PDF 2SK3582CT 100Hz, 100mV 2SK3582CT 2SK3582

    2SK3582MFV

    Abstract: 2SK3582
    Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3582MFV 2SK3582MFV 2SK3582

    2SK3582TK

    Abstract: No abstract text available
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3582TK 2SK3582TK

    Untitled

    Abstract: No abstract text available
    Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3582MFV

    2SK3582

    Abstract: No abstract text available
    Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj


    Original     		PDF 2SK3582TV 2SK3582

    2SK3582MFV

    Abstract: No abstract text available
    Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK3582MFV 100mV 2SK3582MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current


    Original     		PDF 2SK3582TV

    CG transistor

    Abstract: No abstract text available
    Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK3582TK 100mV CG transistor

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK3376TT

    Abstract: H5401 TC58010FT TMPR4925XB fet 1412 BGA256 TPS850 TX49 JFET ecm FET H2
    Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年1月号 1 多値技術を採用し大容量化を実現 1ギガビットNAND型フラッシュメモリ TC58010FTTH58020FT NANDシステム・カード担当 045-890-2702 NAND型フラッシュメモリは、大容量・安価という


    Original     		PDF TC58010FT TH58020FT NAND22 7-3405FAX. 48TSOP TC55YD1873YB TC55YD1837YB SRAM045-890-2701 2SK3376TT H5401 TC58010FT TMPR4925XB fet 1412 BGA256 TPS850 TX49 JFET ecm FET H2

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    RJN1167

    Abstract: KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E
    Text: Outline Name TFSM ULP-4 VSM TVSM ESM USM TO-92M Size[§§] 0.8¡¿0.6¡¿0.38 1.0¡¿0.6¡¿0.37 1.2¡¿0.8¡¿0.5 1.2¡¿0.8¡¿0.32 1.6¡¿0.85¡¿0.7 2.0¡¿1.25¡¿0.9 4.3¡¿3.2¡¿2.4 Type No. High Gain IDSS §¸ Grade Max. Ratings V Supply (V) ISupply(§ )


    Original     		PDF O-92M KTK698TV KTK697TV KTK599TV KTK598TV KTK597 KTK596 2SK1578 KTK596S RJN1167 KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124