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Toshiba America Electronic Components 2SK3880(F)
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Quest Components	2SK3880(F)		76			1 $3.464 10 $3.464 100 $1.9052 1000 $1.9052 10000 $1.9052	Buy Now

2SK388 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK388	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK388	Toshiba		Original	PDF
2SK388	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK388	Unknown	FET Data Book	Scan	PDF
2SK388	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK388	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK388	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK3880	Toshiba	Field Effect Transistor / Silicon N-Channel MOS Type	Original	PDF
2SK388/1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK388/2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK388/3	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK388/4	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK388/5	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK388/6	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

2SK3887-01	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3888-01MR	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3889-01L	Fuji Electric	N-Channel Silicon Power MOSFET, Super FAP-G Series	Original	PDF
2SK3889-01S	Fuji Electric	N-Channel Silicon Power MOSFET, Super FAP-G Series	Original	PDF
2SK3889-01SJ	Fuji Electric	N-Channel Silicon Power MOSFET, Super FAP-G Series	Original	PDF

2SK388 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2sk3880 Abstract: No abstract text available Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3880 2sk3880	PDF
2SK3887-01 Abstract: No abstract text available Text: 2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3887-01 O-220AB 2SK3887-01	PDF
K3880 Abstract: toshiba K3880 Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3880 K3880 toshiba K3880	PDF
2SK3889-01L Abstract: No abstract text available Text: 2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3889-01L	PDF
K3880 Abstract: 2SK3880 toshiba K3880 Text: 2SK3880 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3880 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.35Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.2S (標準)	Original	2SK3880 10VID 2-16F1B K3880 2SK3880 toshiba K3880	PDF
Untitled Abstract: No abstract text available Text: 2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3889-01L	PDF
2SK3888-01MR Abstract: No abstract text available Text: 2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3888-01MR O-220F 2SK3888-01MR	PDF
K3880 Abstract: 2SK3880 diode marking 1200 Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3880 K3880 2SK3880 diode marking 1200	PDF
2SK3887-01 Abstract: No abstract text available Text: 2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3887-01 O-220AB 2SK3887-01	PDF
K3880 Abstract: 2SK3880 toshiba K3880 Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3880 K3880 2SK3880 toshiba K3880	PDF
2N4351 MOTOROLA Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76 Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132	Original	2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76	PDF
k3880 Abstract: No abstract text available Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3880 k3880	PDF
2SK3888-01MR Abstract: No abstract text available Text: 2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators	Original	2SK3888-01MR O-220F 2SK3888-01MR	PDF
diode sj Abstract: 2SK388 2SK3889-01L MOSFET 600V 36A Text: 2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators	Original	2SK3889-01L diode sj 2SK388 MOSFET 600V 36A	PDF

Untitled Abstract: No abstract text available Text: 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3880 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)	Original	2SK3880	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
Toshiba TMPA8873 Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6	Original	SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
2sk3882 Abstract: 2SK3882-01 2sk38 MS5F5909 Text: DATE DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 CHECKED Sep.-16-'04 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used	Original	2SK3882-01 MS5F5909 H04-004-05 H04-004-03 2sk3882 2SK3882-01 2sk38 MS5F5909	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2SK388 Abstract: 2sk38 Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)	OCR Scan	2SK388 100nA 2SK388 2sk38	PDF
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115	PDF

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2SK388 Search Results

2SK388 Price and Stock

Toshiba America Electronic Components 2SK3880(F)

2SK388 Datasheets (19)

2SK388 Datasheets Context Search

2sk3880

2SK3887-01

K3880

2SK3889-01L

K3880

Untitled

2SK3888-01MR

K3880

2SK3887-01

K3880

2N4351 MOTOROLA

k3880

2SK3888-01MR

diode sj

Untitled

5252 F 1009 4-pin

Toshiba TMPA8873

2SK2056

2SK3567 equivalent

2sk3882

GT30F131

IGBT GT30F124

2SK388

mg15g1al3