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    2SK953 Search Results

    2SK953 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK953 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK953 Unknown FET Data Book Scan PDF
    2SK953-01 Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF
    2SK953-01 Collmer Semiconductor MOSFET Transistors Scan PDF

    2SK953 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original     		2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794 PDF

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211 PDF

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


    OCR Scan     		001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151 PDF

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01 PDF

    2sk1005

    Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
    Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn


    OCR Scan     		001SS7 CT03P t-39-13 2MI50F-050 2MI50S-050 2MI100F-025 2MI100F-050 2MI200F-025 6MI15FS-050 6MI20FS-025 2sk1005 T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101 PDF

    2SK1012

    Abstract: 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 2SK1917-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1012 2SK1015 2SK1018-01 2SK1082 2SK1211 2SK1545 2sk1018 2SK1081-01 2SK1102 PDF

    2SK725A

    Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
    Text: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899


    OCR Scan     		2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK725A 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953 PDF

    90T03P

    Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
    Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn


    OCR Scan     		FAP-11 T03PF 2SK957-01 T0220F 2SK958-01 T0220 2SK959-01 2SK1548-01 2SK1024-01 90T03P 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors PDF

    2SK1511

    Abstract: 2SK1512-01 2sk1018 2SK1221-01 2SK191 2SK1018-01 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01
    Text: FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts Package Characteristics Max. Maximum Ratinas Device toff (PS) Coss(pfy V d s s (V) Type . Ip (AL _ Pd (W) R ds(on) Q Ciss(pf) 10220 90 210 860 80 0.40 250 W M to :


    OCR Scan     		2SK1221-01 T0220 2SK191 T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1511 2SK1512-01 2sk1018 2SK1018-01 2SK1013-01 PDF

    2SK1221-01

    Abstract: No abstract text available
    Text: COL L HE R S E M I C O N D U C T O R INC b3E D • 5 2 3 8 7^ 2 0 0 0 1 Ô7 1 541 « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvpe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01


    OCR Scan     		2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1222-01 2SK1015-01 2SK1916-01 PDF

    2SK956

    Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
    Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099


    OCR Scan     		D1S70 2SK905 2SK1134 T03PF 2SK905A 2SK906 2SK906A 2SK900 T0220 2SK947 2SK956 2sk1005 2SK1015 2SK948 436s 0 280 130 055 2SK726 PDF

    2SK726

    Abstract: 2SK955 2SK956 2sk94 2SK727 2SK906A 2SK1004 2SK902A 2SK900 2sk1018
    Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099


    OCR Scan     		D1S70 2SK905 2SK1134 T03PF 2SK905A 2SK906 2SK906A 2SK900 T0220 2SK947 2SK726 2SK955 2SK956 2sk94 2SK727 2SK1004 2SK902A 2sk1018 PDF

    523a1

    Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
    Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time


    OCR Scan     		001SS7 25-35kg 523a1 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900 PDF

    2SK934

    Abstract: 2SK943 2Sk955 2SK935 2SK936 2SK931 2SK933 2SK932 2SK942 2sk941
    Text: - 76 - f Ÿ± € m m m iS ft H M 2SK931 £ V* i A K 2SK93Q X V X P d /P c h I* * (V) ^5 % fë ft (A) * (W) Ig s s (max) (A) Vg s (V) (min) (A) ^ 5<l (Ta=25tC ) M (max) V d s (A) (V) (min) (V) (max) V d s (V) (V) 9 m (min) (S) (< r Id (A) Vds (V) Id


    OCR Scan     		2SK930 2SK931 2SK932 2SK933 2SK934 2SK935 110nstyp 2SK953 210nstyp 2SK954 2SK943 2Sk955 2SK936 2SK931 2SK933 2SK932 2SK942 2sk941 PDF

    k1507

    Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
    Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn


    OCR Scan     		T0220F15 K1663 k1507 K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05 PDF

    2SK1661

    Abstract: 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821
    Text: FUJI [ITLilC&irOgDE COLLHER SEMI CONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low


    OCR Scan     		T03PF 2SK1661 2SK727 2sk1084 2SK1090 2SK1024 2sk1021 2SK1385 2SK1821 PDF