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    30-PIN 9-BIT RAM MODULE Search Results

    30-PIN 9-BIT RAM MODULE Result Highlights (5)

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    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation

    30-PIN 9-BIT RAM MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM514101B

    Abstract: HB56B49 HM514101BS 30-pin 9-bit ram module
    Text: HB56B49 Series Maintenance only 4,194,304-word x 9-bit High Density Dynamic RAM Module The HB56B49 is a 4M × 9 dynamic RAM module, mounted nine 4-Mbit DRAM HM514101BS sealed in SOJ package. An outline of the HB56B49 is 30-pin single in-line package having


    Original     		PDF HB56B49 304-word HM514101BS) 30-pin HB56B49AR, HB56B49ATR) HB56B49BR) HB56B49 HM514101B HM514101BS 30-pin 9-bit ram module

    HB56A169

    Abstract: No abstract text available
    Text: HB56A169 Series 16,777,216-word x 9-bit High Density Dynamic RAM Module The HB56A169 is a 16 M × 9 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM HM5116100AS sealed in SOJ package. An outline of the HB56A169 is 30-pin single in-line package. Therefore, the HB56A169 makes high


    Original     		PDF HB56A169 216-word 16-Mbit HM5116100AS) 30-pin HB56A169AR-6A

    HB56C49

    Abstract: No abstract text available
    Text: HB56C49 Series Maintenance only 4,194,304-word x 9-bit High Density Dynamic RAM Module The HB56C49 is a 4 M × 9 dynamic RAM module, mounted nine 4-Mbit DRAM HM514102BS sealed in SOJ package. An outline of the HB56C49 is 30-pin single in-line package having Lead types (HB56C49AR,


    Original     		PDF HB56C49 304-word HM514102BS) 30-pin HB56C49AR, HB56C49ATR) HB56C49BR)

    IC BD 540 LYS

    Abstract: 32T0 BD 540 LYS m-56a Hitachi DSA0088 HB56A169 D-83622 C42S
    Text: HB56A169BR-6B/7B/8B Preliminary 16,777,216-Word x 9-Bit High Density Dynamic RAM Module Rev. 0 Jul. 17, 1995 The HB56A169 is a 16M x 9 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM HM5116100BS sealed in SOJ package. An outline of the HB56A169 is 30-pin single inline package. Therefore, the HB56A169 makes


    Original     		PDF HB56A169BR-6B/7B/8B 216-Word HB56A169 16-Mbit HM5116100BS) 30-pin HB56A169BR-6B IC BD 540 LYS 32T0 BD 540 LYS m-56a Hitachi DSA0088 D-83622 C42S

    HB56A49BR-7B

    Abstract: HB56A49
    Text: HB56A49 Series 4,194,304-word x 9-bit High Density Dynamic RAM Module The HB56A49 is a 4M × 9 dynamic RAM module, mounted nine 4-Mbit DRAM HM514100BS /BLS/CS/CLS sealed in SOJ package. An outline of the HB56A49 is 30-pin single in-line package having lead types (HB56A49AR/ATR), socket


    Original     		PDF HB56A49 304-word HM514100BS 30-pin HB56A49AR/ATR) HB56A49BR) HB56A49 HB56A49BR-7B

    YL-69

    Abstract: No abstract text available
    Text: NEC Electronics Inc. MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C-421000A9 is a fas t-p a g e 1,048,576-word by 9-bit dynam ic RAM m odule designed to o perate from a single + 5-volt pow er supply. 30-Pin Leaded SIMM MC-421000A9A/AA/AB


    OCR Scan     		PDF MC-421000A9 C-421000A9 576-word 30-Pin MC-421000A9A/AA/AB) /JPD421000) /L/PD424400) YL-69

    MC-421000A9B

    Abstract: 30-pin nec
    Text: NEC Electronics Inc. MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C-421000A9 is a fast-p ag e 1,048,576-word by 9-bit dynam ic RAM m odule designed to o perate from a single + 5-volt pow er supply. 30-Pin Leaded SIMM MC-421000A9A/AA/AB


    OCR Scan     		PDF MC-421000A9 576-word C-421000A9 /PD421000) UPD424400) /JPD421000) 30-Pin MC-421000A9A/AA/AB) MC-421000A9 MC-421000A9B 30-pin nec

    256k 30-pin SIMM

    Abstract: 30-pin simm memory
    Text: MEC NEC Electronics Inc. MC-42256AB9 262,144 x 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The MC-42256AB9 is a 262,144-word by 9-bit DRAM module designed to operate from a single +5-volt power supply. The module is a 30-pin socket-mountable


    OCR Scan     		PDF MC-42256AB9 144-word 30-pin /JPD424256LA /JPD42256L /JPD42256 144-woW 256k 30-pin SIMM 30-pin simm memory

    Untitled

    Abstract: No abstract text available
    Text: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types


    OCR Scan     		PDF /AT/B-8/10/12 304-Word 514100JP) 30-pin HB56A49A, HB56A49AT) 56A49B)

    30-pin simm memory "16m x 8"

    Abstract: No abstract text available
    Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A


    OCR Scan     		PDF STI916100 30-PIN STI916100 24-pin STI916100-xxT) STI916100-xxG) 30-pin simm memory "16m x 8"

    HM511000

    Abstract: No abstract text available
    Text: HB56A19L S eries-1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A19 is a 1M x 9 dynamic RAM module, mount­ ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack­ age. An outline of the HB56A19 is 30-pin single in-line pack­


    OCR Scan     		PDF HB56A19L 576-Word HB56A19 HM511000ALJP) 30-pin HB56A19A, HB56A19AT) HB56A19B, HB56A19GB) HM511000

    MT1257

    Abstract: SIMM 30-pin 30 pin simm 30-pin simm memory 30-pin SIMM RAM "30 pin simm" simm 30-pin 9-bit 30 pin simm memory MT82 ia4a5
    Text: IICRON vis/ 'TO257M MT9257M TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 256K x 8 BIT DYNAMIC RAM 256K x 9 BIT DYNAMIC RAM / n f\ . We're building our reputation on innovation, FEATURES •Industry standard pin out in a 30-pin single-in-line memory module (SIMM)


    OCR Scan     		PDF /ITB257M MT9257M 30-pin 135mW 1350mW MT1257 SIMM 30-pin 30 pin simm 30-pin simm memory 30-pin SIMM RAM "30 pin simm" simm 30-pin 9-bit 30 pin simm memory MT82 ia4a5

    MT1257

    Abstract: T9257 block and pin diagram of 8257
    Text: ìk '/ITB257M MT9257M IICRON v ry TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TW X 910-970-5973 256K x 8 BIT DYNAMIC RAM 256K x 9 BIT DYNAMIC RAM ¿MLITT AltUtIO Wte’re building our reputation on innovation. FEATURES •Industry standard pin out in a 30-pin single-in-line mem ory module (S IM M )


    OCR Scan     		PDF /ITB257M MT9257M 30-pin 135mW 1350m T8257/M T9257 MT1257RJ MT1257 block and pin diagram of 8257

    Untitled

    Abstract: No abstract text available
    Text: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package


    OCR Scan     		PDF STI91000 STI91000-60 STI91000-70 STI91000-80 110ns 130ns 150ns 30-PIN STI91000

    we221

    Abstract: No abstract text available
    Text: H B 5 6 C 1 9 A /A T /B - 8 A /1 0 A /1 2 A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56C19 is a 1M x 9 static column mode dynamic RAM module, mounted nine 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the HB56C19 is 30-pin single in-line package


    OCR Scan     		PDF 576-Word HB56C19 HM511002JP) 30-pin HB56C19AT) HB56C19B) HM511002A we221

    Untitled

    Abstract: No abstract text available
    Text: HB561409 Series-262,144-word x 9-bit Dynamic Random Access Memory Module The HB561409 is a 256k x 9 dynamic RAM module, mounted 9 pieces of 256k-bit DRAM HM51256CP sealed in PLCC package. An outline of the HB561409 is 30-pin single in-line package having two types; Lead type (HB561409A) and Socket


    OCR Scan     		PDF HB561409 Series----------262 144-word 256k-bit HM51256CP) 30-pin HB561409A) HB561409B)

    HB561409B-10

    Abstract: 30-pin simm memory 180NS hm51256 256k 30-pin SIMM 30-pin simm memory dynamic simm 30-pin 9-bit 30-pin SIMM RAM SIMM 30-pin HB561409A
    Text: HB561409 Series 262,144-word x 9-bit Dynamic Random Access Memory Module The HB561409 is a 256k x 9 dynamic RAM module, mounted 9 pieces of 256k-bit DRAM HM51256CP sealed in PLCC package. An outline of the HB561409 is 30-pin single in-line package having two types; Lead type (HB561409A) and Socket


    OCR Scan     		PDF HB561409 144-word 256k-bit HM51256CP) HB561409 30-pin HB561409A) HB561409B) HB561409B-10 30-pin simm memory 180NS hm51256 256k 30-pin SIMM 30-pin simm memory dynamic simm 30-pin 9-bit 30-pin SIMM RAM SIMM 30-pin HB561409A

    EADS-80

    Abstract: No abstract text available
    Text: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995 Organization . . . 4194304 x 9 SINGLE IN-LINE MODULE Single 5-V Power Supply ±10% Tolerance (TOP VIEW) 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets


    OCR Scan     		PDF TM4100EAD9 SMMS419C 30-Pin 4100EAD9-60 4100EAD9-70 4100EAD9-80 EADS-80

    HB56A19B

    Abstract: HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A HB56A19
    Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM H M 511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type


    OCR Scan     		PDF HB56A19 576-Word 511000JP) 30-pin HB56A19A, HB56A19AT) HB56A19B) HB56A19B HB56A19B8A HB56A19B10A HB56A19B-7H 511000a HB56A19AT10A HB56A19B-8A

    30-pin SIMM RAM

    Abstract: No abstract text available
    Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package


    OCR Scan     		PDF STI94000 30-PIN 110ns 130ns 150ns STI94000 20-pin 30-pin SIMM RAM

    Untitled

    Abstract: No abstract text available
    Text: HB56A19A/AT/B-6H/7H/8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module P in N o . • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types


    OCR Scan     		PDF HB56A19A/AT/B-6H/7H/8A/10A/12A 576-Word HB56A19 HM511000JP) 30-pin HB56A19A, HB56A19AT) HB56A19B)

    GM71C4100BI

    Abstract: GMM794000 GM71C4100 iqm7
    Text: @ LG Semicon. Co. LTD. Description Features The GMM794000BS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100BJ, 4Mxl in 20/26 pin small out-line J-form on a 30 pin single in-line package. The GMM794000BS is a socket type memory


    OCR Scan     		PDF GMM794000BS GM71C4100BJ, GMM794000BS-60 GMM794000BS-70 GMM794000BS- 00D7b04 0007b05 0007b0L> GM71C4100BI GMM794000 GM71C4100 iqm7

    Untitled

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 130ns 150ns 180ns KMM594000A 30-pin KM41C4000AJ 20-pin

    Samsung Capacitor sms

    Abstract: km41c4000aj KM41C4000A
    Text: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM59400QA KMM594000A KM41C4000AJ 20-pin 30-pin KMM594000A- Samsung Capacitor sms KM41C4000A