HB56A49BR-7B
Abstract: HB56A49
Text: HB56A49 Series 4,194,304-word x 9-bit High Density Dynamic RAM Module The HB56A49 is a 4M × 9 dynamic RAM module, mounted nine 4-Mbit DRAM HM514100BS /BLS/CS/CLS sealed in SOJ package. An outline of the HB56A49 is 30-pin single in-line package having lead types (HB56A49AR/ATR), socket
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HB56A49
304-word
HM514100BS
30-pin
HB56A49AR/ATR)
HB56A49BR)
HB56A49
HB56A49BR-7B
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HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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M5M23160
Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1
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16-Meg
MSM5116160
MSM5116400
MSM5117100
MSM5117400
MSM5117800
MSM51V16100
MSM51V16160
MSM51V16400
MSM51V17100
M5M23160
TC5117400
oki cross
kmm5322000a
THM324080AS
lh538000
424100
IBM025161
MC-421000A36
uPD482445
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4 bit dynamic ram
Abstract: 4170A 16 bit static RAM 16 BIT WORD STATIC RAM Dynamic RAM HB56B48 mask ram HM51 HM512200B HM514405C
Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.
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B56A
Abstract: No abstract text available
Text: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56A49 is a 4M x 9 dynam ic RAM m odule, m ount ed 9 pieces o f 4 M bit D RAM H M 514100AS, H M 514100JP sealed in an SOJ package. An outline o f th e H B56A49 is the
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HB56A49
304-Word
B56A49
514100AS,
514100JP)
30-pin
HBS6A49
B56A
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Untitled
Abstract: No abstract text available
Text: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A49 is a 4M x 9 dynamic RAM module, mount ed 9 pieces of 4 Mbit DRAM HM514100AS, HM514100JP sealed in an SOJ package. An outline of the HB56A49 is the
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HB56A49
304-Word
HM514100AS,
HM514100JP)
30-pin
HB56A49
56A49
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hm514100as
Abstract: gbr7 HB56A49A8 HM514100a
Text: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A49 is a 4M x 9 dynamic RAM module, mount ed 9 pieces of 4 Mbit DRAM HM514100AS, HM514100JP sealed in an SOJ package. An outline of the HB56A49 is the
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HB56A49
304-Word
HM514100AS,
HM514100JP)
30-pin
hm514100as
gbr7
HB56A49A8
HM514100a
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Untitled
Abstract: No abstract text available
Text: HB56 A49 A/AT/B-8/10/12 9-Bit DRAM I PIN OUT 4,194,304-Word x 9 Bit High Density Dynamic RAM Module • DESCRIPTION T he H B 56A 49 is a 4M x 9 dynam ic RAM m odule, mounted nine 4M bit DR AM HM 514100JP sealed in SOJ package. An outline of the H B 56A 49 is 30-pin single in-line package having Lead types
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/AT/B-8/10/12
304-Word
514100JP)
30-pin
HB56A49A,
HB56A49AT)
56A49B)
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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DYNAMIC RAM CROSS REFERENCE
Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102
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KM41C4000
KM41C4001
KM41C4002
KM44C1000
KM44C1002
TC514100
TC514101
TC514102
TC514400
TC514402
DYNAMIC RAM CROSS REFERENCE
KMM5362000
KMM53220
KMM581000
KMM532200
THMS361020
KMM591000
MC-422000A36
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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