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    KMM5362000 Search Results

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    Samsung Semiconductor KMM5362000BG-7

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    Samsung Semiconductor KMM5362000A-8

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    KMM5362000 Datasheets Context Search

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    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


    Original     		PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000A1/A1G KMM5362000A1 bitsX36 20-pin 72-pin 130ns 150ns

    KMM5362000

    Abstract: No abstract text available
    Text: KMM5362000B1/B1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5362000B1 consist of sixteen CMOS 1 Mx 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M x 1


    OCR Scan     		PDF KMM5362000B1/B1G KMM5362000B1-6 KMM5362000B1-7 KMM5362000B1-8 110ns 130ns 150ns KMM5362000B1 20-pin KMM5362000

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns


    OCR Scan     		PDF 71b4142 0Q151b4 KMM5362000B/BG 110ns 5362000B-7 130ns KMM5362000B-8 150ns KMM5362000B-6 cycles/16ms

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^ 1 4 1 4 2 GÜ1S170 flH2 I KMM5362000BH SP1GK DRAM MODULES 2M x36 DRAM SIMM Memory Module This SIMM is the x3 6 built on x 40 board FEATURES GENERAL DESCRIPTION • Performance range: ÍRAC • • •


    OCR Scan     		PDF 1S170 KMM5362000BH 110ns KMM5362000BH-6 130ns KMM5362000BH-8 KMM5362000BH-7 150ns cycles/16ms KMM5362000BH

    Untitled

    Abstract: No abstract text available
    Text: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1


    OCR Scan     		PDF KMM5362000A/AG KMM5362000A bitsX36 362000A 20-pin 72-pin 362000A-

    km44c1000cj

    Abstract: No abstract text available
    Text: / DRAM MODULE 8 Mega Byte KMM5362000C2/C2G Fast Page Mode 2Mx36 DRAM SIMM Using Parity PLCC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000C2 is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000C2 consists ot sixteen CMOS


    OCR Scan     		PDF KMM5362000C2/C2G 2Mx36 KMM5362000C2 20-pin 18-pin 72-pin km44c1000cj

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5362000CH Fast Page Mode / 2Mx36 DRAM SIMM with ECC, 5V V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000CH is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000CH consists of eighteen CMOS 1Mx4bit DRAMs in 20-pin SOJ packages


    OCR Scan     		PDF KMM5362000CH 2Mx36 20-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUN6 ELECTRONICS INC b4E D • 7^4142 KMM5362000B1/B1G 0G14b47 G67 ■ SflGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000B1/B1G 0G14b47 KMM5362000B1 20-pin 72-pin 22/xF KMM5362000B1-6 110ns

    Untitled

    Abstract: No abstract text available
    Text: KMM5362000A/AG/A1 /A1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1 M X 4 bit


    OCR Scan     		PDF KMM5362000A/AG/A1 362000A bitsX36 20-pin 72-pin 130ns 362000A- 150ns

    Untitled

    Abstract: No abstract text available
    Text: DftAM MODULES KMM5362000A 2 M X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1


    OCR Scan     		PDF KMM5362000A 362000A bitsX36 20-pin 72-pin 22piF 362000A-

    Untitled

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b?E D • T ' i b m M S 0 G 1 5 1 ?b 2 bQ ■ SNGK KMM5362000B2/B2G DRAM MODULES 2Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B2 is a 1M b itsx3 6 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000B2/B2G 2Mx36 KMM5362000B2 20-pin 18-pin 72-pin KMM5362000B2-6 110ns KMM5362000B2-7

    KMM5362000B

    Abstract: EL354 kmm5362000b-8 KMM5362000B7
    Text: DRAM MODULES KMM5362000B/BG 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc ÍRC 60ns 15ns 110ns KMM5362000B-7 70ns 20ns 130ns KMM5362000B-8 80ns 20ns 150ns KMM5362000B-6 • • • • • • • The S am sung KMM5362000B is a 2M b its x 36 D ynam ­


    OCR Scan     		PDF KMM5362000B/BG KMM5362000B-6 KMM5362000B-7 KMM5362000B-8 110ns 130ns 150ns KMM5362000B 20-pi EL354 kmm5362000b-8 KMM5362000B7

    Untitled

    Abstract: No abstract text available
    Text: KMM5362000A/AG/A1 /A1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5362000A is a 2M bitsX 36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1 M X 1


    OCR Scan     		PDF KMM5362000A/AG/A1 362000A- 362000A 100ns 130ns 150ns 180ns

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


    OCR Scan     		PDF KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


    OCR Scan     		PDF 1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM

    KM44C1000

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14


    OCR Scan     		PDF KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


    OCR Scan     		PDF KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble

    M5916

    Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
    Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5


    OCR Scan     		PDF 11Mx9 KMM581000C KMM584Q0 KMM594000C-5 HKMM58100 KMM591000CN-7 M584Q00C-6 jKMM59400QC-6 KMM533100 KMM5361000C2/C2G M5916 533410 M5402 KMM591000CN-7 KMM5334100

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS 42E INC D 7Tb4142 KMM536200GA DG1QS34 T • SMGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRA C tC A C tR C KM M 5362000A- 7 70ns 20ns 130ns KM M 5362000A- 8


    OCR Scan     		PDF 7Tb4142 KMM536200GA DG1QS34 130ns 362000A- 150ns 362000A 100ns KMM5362Q00A

    DYNAMIC RAM CROSS REFERENCE

    Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
    Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102


    OCR Scan     		PDF KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 TC514100 TC514101 TC514102 TC514400 TC514402 DYNAMIC RAM CROSS REFERENCE KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 KMM591000 MC-422000A36

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    SIMM 1Mx9 30pin

    Abstract: simm EDO 72pin KMM51442100ATG KMM532
    Text: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16


    OCR Scan     		PDF 1Mx32 1Mx33 1Mx36 KMM581000CN KMM5B1020CN KMM591000CN KMM591020CN KMM5321000CV/CVG KMM5331000C/CG KMM5361000C2/C2G SIMM 1Mx9 30pin simm EDO 72pin KMM51442100ATG KMM532