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    KM41C4001 Search Results

    KM41C4001 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM41C4001A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4001A-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C4001A-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    KM41C4001 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001B 4M x 1Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS highspeed 4,194,304x1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4001B 110ns 130ns 150ns KM41C4001B 304x1 KM41C4001B-6 KM41C4001BPACKAGE

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


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    PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM41C4001A 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70 ns 20 ns 130ns K M 4 1 C 4 0 0 1 A- 8 80 ns 20 ns 1 50 ns K M 4 1 C 4 0 0 1 A -1 0 100 ns 25 ns 1 80 ns K M 4 1 C 4 0 0 1 A- 7


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    PDF KM41C4001A 130ns 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory, Its design is optimized for high performance applications


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    PDF KM41C4001A 41C4001 KM41C4001A-1 180ns 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 14164B I41C256 I41C25 1C2 1C464 1C466 M41C1000B 1C1O0OBL 1001B 1C1002B 56B 12. KM44C256BL 13. KM44C2§ßB^ 14. KM44C2I 15. 1Ç. Kirnt 1*. KM41C4001 18 llVI4*PKX 2 >.KM44C1Q00/L KM44C1 ft02 KM41 C4pD0A [1C4ÖD0AL Í1C4000ASL 1A 27. 28. 29. 30. 31. 32. 33. 34.


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    PDF 14164B I41C256 I41C25 1C464 1C466 M41C1000B 1001B 1C1002B KM44C256BL KM44C2§

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its


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    PDF KM41C4001B KM41C4001B 304x1 110ns KM41C4001B-7 130ns KM41C4001B-8 KM41C4001B-6 150ns 20-LEAD

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


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    PDF KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble

    KM41C4001

    Abstract: C4001
    Text: CMOS DRAM KM41C4001 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4001 100ns 150ns 180ns 41C4001 KM41C4001 20-LEAD C4001

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.


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    PDF KM41C4001A 130ns 150ns 180ns DD132DS 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N IC S IN C 42E D B 7^b4142 QQ1Q173 4 • SNÛK CMOS DRAM KM41C4001 Ö w 5 4M X1 Bit CMOS Dynamic RAM with Nibble Mode ‘ FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001 is a high speed CMOS 4,194,304 bit X 1 Dynamic Random Access Memory,


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    PDF b4142 QQ1Q173 KM41C4001 KM41C4001 KM41C4001- 150ns- 100ns 180ns

    DYNAMIC RAM CROSS REFERENCE

    Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
    Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102


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    PDF KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 TC514100 TC514101 TC514102 TC514400 TC514402 DYNAMIC RAM CROSS REFERENCE KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 KMM591000 MC-422000A36

    Untitled

    Abstract: No abstract text available
    Text: I KM41C4001A ^ CM OS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM 41C4001 A- 8 80ns 20ns 1 50ns K M 41C 4001A -10 100ns 25ns 1 80ns KM 41C4001 A- 7 Nibble Mode operation


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    PDF KM41C4001A 41Codify-write 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: si KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4001A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM41C4001A 41C4001 18-LEAD 20-LEAD

    KM23C1010

    Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10


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    PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 KM23C1010 KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    KM44C1000

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14


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    PDF KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000

    KM44C1000BJ

    Abstract: 4Mx1 4Mx1 nibble
    Text: FUNCTION G U IDE M E M O R Y IC s Dynamic R A M Continued Capacity 4 M bit Part Number Organization Speed(ns) Technology Features Packages Remark KM41C4000BTR 4 Mx1 60/70/80 CMOS Fast Page 20 Pin TSOP-ll(Reverse) Now KM41C4000BLP KM41C4000BU KM41C4000BLZ


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    PDF KM41C4000BTR KM41C4000BLP KM41C4000BU KM41C4000BLZ KM41C4000BLV KM41C4000BLVR KM41C4000BLT KM41C4000BLTR KM41C4000BSLP KM41C4000BSU KM44C1000BJ 4Mx1 4Mx1 nibble

    20PIN

    Abstract: KM41C4000AL-10 KM41C4000AL-8 KM41C4000ASL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4001A-10 KM41C4001A-7 KM41C4001A-8
    Text: - 228CMOS 4 M m & X y 4 « wj&KES ît £ rc TRAC max TRCY inin ns) (ns) TCAD nin (ns) TAH min (ns) C D ynam R A M TWCY (ns) (ns) 1 9 4 % te TP min ( 4 TDH Bill (ns) TRWC ain (ns) V D D or V C C (V) 3 4 X 1 ) M ID D max (mA) 2 À I DD STANDBY (ISB/ISB2) (mA)


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    PDF 20PIN KM41C4000AL-8 IK/16 KM41C4000AL-10 KM41C4000ASL-7 KM41C40 MCM51L4100-10 MCM51L4100-80 KM41C4000ASL-10 KM41C4000ASL-8 KM41C4001A-10 KM41C4001A-7 KM41C4001A-8

    KM41C4001-10

    Abstract: No abstract text available
    Text: J\M41C4001 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 41C4001 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications


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    PDF J\M41C4001 41C4001 KM41C4001 KM41C4001 20-LEAD KM41C4001-10

    KM416C256-7

    Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
    Text: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10


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    PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7----- KM41C4000ASL-8-- KM41C4000ASL-10 KM41C4001A-7 KM416C256-7 KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference