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    Samsung Semiconductor KM44C1002BJ-7

    1M X 4 STATIC COLUMN DRAM, 70 ns, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44C1002BJ-7 620
    • 1 $4.5
    • 10 $4.5
    • 100 $1.95
    • 1000 $1.8
    • 10000 $1.8
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    KM44C1002 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44C1002A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1002A-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1002A-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 A is a high speed C M OS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002A 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­


    OCR Scan     		PDF KM44C1002B KM44C1002B 576x4 KM44C1002B-6 110ns KM44C1002B-, 130ns KM44C1002B-8 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C1002C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and


    OCR Scan     		PDF KM44C1002C

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1002C 1M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES The S am sung K M 4 4C 1 0 02 C is a C M O S high sp ee d 1, 0 4 8 , 5 7 6 x 4 D y n a m ic R a n d o m A c c e s s M e m o ry . Its • Performance range:


    OCR Scan     		PDF KM44C1002C 110ns 130ns 150ns 20-LEAD

    KM44C1002A-8

    Abstract: No abstract text available
    Text: KM44C1002A_ CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002A_ KM44C1002A KM44C1002A 20-LEAD KM44C1002A-8

    KM44C1002C

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1002C 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tR A C tC A C tR C KM44C1002C-5 50ns 13ns 90ns KM44C1002C-6 60ns 15ns 110ns KM44C1002C-7 70ns


    OCR Scan     		PDF KM44C1002C KM44C1002C 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1002 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1002 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: L*S E J> SAMSUNG ELECTRONICS' INC B Timms D 0102 SD =1 BSSM6 K KM44C1002 CM OS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.


    OCR Scan     		PDF KM44C1002 150ns 100ns 180ns 001023b 20-LEAD SA2V38URSG

    Untitled

    Abstract: No abstract text available
    Text: KM44C1002A CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002A 130ns 150ns 44C1002A- 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung K M 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002A 130ns 150ns 180ns 44C1002A- 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C1002 CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 2 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit x 4 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1002 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E T> • 7=ib4mE 001331G 3SS ■ S M G K KM44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1002A Is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.


    OCR Scan     		PDF 001331G KM44C1002A 44C1002A 44C1002A- 130ns 150ns 002A-10 180ns G013327

    KM44C258

    Abstract: KM44C1002BV
    Text: KM44C1002B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


    OCR Scan     		PDF KM44C1002B 110ns 130ns 150ns KM44C1002B 576x4 TheKM44C1002B 20-LEAD KM44C258 KM44C1002BV

    Untitled

    Abstract: No abstract text available
    Text: KM44C1002A CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002A is a high speed CMOS 1,048,576 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002A KM44C1002A- KM44C1002A-10 100ns 130ns 150ns 180ns KM44C1002A

    KM44C1002

    Abstract: KM44C1002-8
    Text: CMOS DRAM KM44C1002 1M X 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1002 200jjs 20-LEAD KM44C1002 KM44C1002-8

    a9ce

    Abstract: No abstract text available
    Text: KM44C1002C CMOS DRAM 1 M x 4 B i t C M O S D yn am ic R A M with Static C olum n M o d e DESCRIPTION This is a family of 1,048,576 x 4 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random or sequential access of memory cells within the same row. Access time -5, -6, -7 or -8 and


    OCR Scan     		PDF KM44C1002C a9ce

    Untitled

    Abstract: No abstract text available
    Text: KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION The Samsung KM44C1012A is a CMOS high speed 1,048,576 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1012A KM44C1012A KM44C1012A-7 130ns KM44C1012A-8 150ns KM44C1012A-10 100ns 180ns

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


    OCR Scan     		PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7Tb414E 00 13 3 2 8 5=13 KM44C1012A CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION Perform ance range: KM44C1012A-7 KM44C1012A-8 KM44C1012A-10 tnAC tcAc I rc


    OCR Scan     		PDF 7Tb414E KM44C1012A KM44C1012A-10 130ns KM44C1012A-8 KM44C1012A-7 150ns KM44C1012A 180ns

    SJ08

    Abstract: MCM54400A mn414400asj mcm514400 20PIN KM44C1000ASL-10 KM44C1002A-7 KM44C1010A-10 KM44C1010A-7 MN414400
    Text: - 234 - 4M m £ ì& m m tt £ ro CMOS x TRAC max ns TRCY (ns) D y n a m i c RAM (1 0 4 8 5 7 6 X 4 ) € 'i 7 f TCAD rain (ns) TAH (ns) TP tir (ns) TOCY min (ns) TDH rain (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N M I DD isax (mA) À I DD STANDBY U SV 1SB 2)


    OCR Scan     		PDF 20PIN USW1S82) KM44C1000ASL-10 IK/256 KM44C1010A-7 IK/16 KK44C1010A-8 KM44C1010A-10 SJ08 MCM54400A mn414400asj mcm514400 KM44C1002A-7 MN414400

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"