Untitled
Abstract: No abstract text available
Text: M an A M P com pany Radar Pulsed Power Module, 140W, 300iis, 10% Duty 2.7 - 3.1 GHz PHA2731-140L — Features • • • • • NPN Silicon Pow er Transistors Input a n d O u tp u t M atched to 500 D uroid Circuit B oard Easily C om bined For High P ow er Transm itters
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300iis,
PHA2731-140L
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Untitled
Abstract: No abstract text available
Text: ^ litr o n PR O DU CT DEVICES.INC. 1 1 7 7 BLUE H ERON BLVD. • RIVIERA BEACH, FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, 4.0A, 2.4 Q SYMBOL Dr ai n-source Volt.(l)
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SDF4N90
SDF4N90
00A/jJ
300iiS,
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VN67
Abstract: VN67AFD VN67AB VN67AD vn674 T00C
Text: SILICONIX INC 1ÖE D • 82S473S Qomobfl □ ■ VN67 SER IES f T S ilic o n ix JLM in c o rp o ra te d N-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY TO-2Q5AD TO-39 PART NUMBER V(BR)DSS TDS(ON) (V) ( f l) Id (A) P AC KA G E VN67AB 60 3.5
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vn67ab
to-205ad
vn67ad
to-22q
vn67afd
to-220sd
VNDQ06
O-220/TO-22QSD
O-220
T0-220SD
VN67
vn674
T00C
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTOR ISSU E 2 - FEBRUARY 1995_ O FEATURES * High gain and low saturation voltages C O M P L E M E N T A R Y TYPE - BC X69 P A R T M A R K IN G D E T A IL - BC X68 - CE BCX68-16 - C C BCX68-25 - C D ABSOLUTE M A X IM U M RATINGS.
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BCX68-16
BCX68-25
500mA,
300iis.
FMMT449
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Untitled
Abstract: No abstract text available
Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )
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300iiS,
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 GG1247Ü 613 m S H G K N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance
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GG1247Ã
SSP1N60/1N55
O-220
SSP1N60
SSP1N55
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2907A
Abstract: No abstract text available
Text: 3SE m D fl23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025
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fl23b320
12-mm
Q62702-
Z2028
OT-223
Q62702â
Z2025
150Hz
200ns
2907A
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Untitled
Abstract: No abstract text available
Text: JHltron PRODUCT DEVICES,INC. 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS Drain-source Vo It. 1 Dr a in-Gat e Vo 1tage VDGR (Rg s -I.OM o ) (1) Gate-Source Voltage VGS Con t inuous Drain Current Continuous ID (Tc = 2 5 ‘C) 1DM Drain Current Pulsed(3)
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8S3-S946
300iiS.
flb02
A30-1
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 37E ] • Ô1331Ô7 0Q0030S H JAN 0 5 1988 SEMELAB 2N 6787 2N 6788 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES PIN 1-S o u rce PIN 2 -G a te PIN 3 Drain and Case
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0Q0030S
2N6787
2N6788
2N8787
JB06C
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SDF440
Abstract: No abstract text available
Text: Æ iitro n PRODUCT DEVICES.INC. ATÂl©' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l Dra in-Ga te Vo 11age (RGS=1.0Mn) (1) Gate-Source Voltage Continuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)
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SDF440
MIL-S-19500
3001iS>
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Untitled
Abstract: No abstract text available
Text: BSR41 BSR43 SOT89 NPN SILICON PLANAR M ED IU M POWER TRANSISTORS IS S U E 3 - F E B R U A R Y 1996 CO M PLEM ENTARY TYPES O - B S R 4 3 - B SR 33 B SR41 - BSR31 P A R T M A R K IN G D ETA IL - B SR 4 3 -A R 4 BSR41 - A R2 B SOT89 ABSOLUTE M A X IM U M RATINGS.
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BSR41
BSR43
BSR31
BSR41
150mA,
500mA,
Vce-10V
35MHz
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 O_ FEATURES * Suitable for A F drivers and output stages * High collector current and Low V CE sat C O M P L E M E N T A R Y TY PE - BCP69 P A R T M A R K IN G D E T A IL -
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OT223
BCP69
BCP68
BCP68
150oC
BCP68-25
300iis.
FMMT449
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lg crt tv
Abstract: NB212 NB211 NB222 NB112EY NB111 NB022 NB022EY
Text: bSD1130 003 SST7 'NATL SEMICOND {DISCRETE} 6501130 NATL SEMICOND, Z CL CO CM CM 28C 3 5 5 9 7 D I S CR ET E D T-ll-Z 3 E JI National m m Semiconductor as CM CM CM NB221 222 2 2 3 ÎP N P ) 500m A medium current driver transistors features CM CM CÛ z Q.
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bSD1130
003SST7
NB221
500mA
rec-50
SD113D
nb022ey
nb123ey
nb113ey
nb111ey
lg crt tv
NB212
NB211
NB222
NB112EY
NB111
NB022
NB022EY
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IC LA7837
Abstract: LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions colour tv circuit diagram LA 7838 la 7837
Text: LA7837, 7838 Monolithic Linear 1C No.3313 S A w Vertical Deflection Output Circuit with TV and Display Drive Circuit ro . i The LA7837 7838 are vertical deflection output ICs developed for use in high-grade TVs and displays. The interlace and crossover distortion responses, in particular, have been greatly improved, allowing
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LA7837,
LA7837
IC LA7837
la7837 pin out
LA7837* pin voltages
LA7838
la7837 vertical
LA7837 functions
colour tv circuit diagram
LA 7838
la 7837
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USD520
Abstract: USD520F USD535 USD535F USD545 USD545F DO-5 Package usd535 unitrode
Text: USD520 USD535 USD545 POWER SCHOTTKY RECTIFIERS 150 Amp Pk, Up to 45V FEATU RES DESCR IPTIO N • • • • • • • • T h is serie s of S ch o ttky ba rrier power re c tifie rs is id e a lly su ited fo r o u tp ut re c tifie rs and ca tc h d io d es in low
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USD520
USD535
USD545
US0535
USD520F
USD535F
USD545F
USD545
USD545F
DO-5 Package
usd535 unitrode
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DIODE SD51
Abstract: Schottky Diode sd51 SD51 DT700 617 065 026
Text: SD51 POWER SCHOTTKY RECTIFIERS 120 Amp Pk, 45V DESCRIPTION FEATURES • • • • • The SD 51 has a Schottky barrier junction and is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Microsemi high conductivity design, using a heavy
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300/iS
DIODE SD51
Schottky Diode sd51
SD51
DT700
617 065 026
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MJ900
Abstract: MJ1000 MJ901 3001 pnp MJ1001 MJ3001 B 817 c MJ2500 MJ2501 2N6053
Text: - , SGS-THOMSON MJ900 901 1 Ë fKl MILifgTF!Hi ili] S MJ1000/1001 COMPLEMENTARY POWER DARLINGTONS lE S C R lP T IO N tie MJ900, MJ901, MJ1000 and MJ1001 are siii:on epitaxial-base transistors in monolithic Darlingon configuration, and are mounted in Jedec TO-3
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MJ1000/1001
MJ900,
MJ901,
MJ1000
MJ1001
MJ900
MJ901
\/lJl001
3001 pnp
MJ3001
B 817 c
MJ2500
MJ2501
2N6053
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - FEB 9 4 FXT755 _ FEATURES * 150 Volt V,CEO 1 Amp continuous current Low saturation voltage Pt0,= 1 Watt E-Line T092 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FXT755
ZTX755
-10mA,
-100hA,
-125V,
-50mA*
-200mA*
-500mA,
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7805 8PIN
Abstract: LMS 7805 ST 7805 TD 200 manual free voltage regulator 7805 DS1232 MAX1232 MAX1232CPA MAX1232CSA MAX1232EPA
Text: 19-3899, R e v i 2/91 wiyjxiyi/i M A X 1 2 3 2 M ic ro p ro c e s s o r M o n ito r _ F e a tu re s ♦ Consumes 1/1 Oth the Power of the DS1232 A re s e t p u ls e o f a t le a s t 2 5 0 m s d u ra tio n is s u p p lie d on p o w e r-u p , p o w e r-d o w n , a n d lo w -v o lta g e b ro w n -o u t c o n
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MAX1232
DS1232.
250ms
150ms
7805 8PIN
LMS 7805
ST 7805
TD 200 manual
free voltage regulator 7805
DS1232
MAX1232CPA
MAX1232CSA
MAX1232EPA
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSU E 3 - MARCH 1996_ P A R T M A R K IN G D E T A IL S - 5 7 6 'It! ABSOLUTE MAXIM UM RATINGS. PARAM ETER SYM BO L VALUE UNIT Collector-Base Voltage V CBO -200 V V Collector-Emitter Voltage
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DETAILS-576
-10mA*
-100nA
Curr200
-160V
100mA,
-100mA,
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N 407 Diode
Abstract: No abstract text available
Text: Æutron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRO NICS WAY • WEST P ALM BEACH. FLORIDA 33407 TEL. 407 848-4311 • TLX: SI-3 43 5 « F AX : (407) 863-5946 1000V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - S o u r c e \/o 1 t . ( 1 )
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300iiS
03bflb02
N 407 Diode
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PIC801
Abstract: PIC800 PIC811 vk15 PUSH PULL PIC 100-C PIC810 unitrode flyback regulator 400V voltage regulator
Text: POWER INTEGRATED CIRCUIT PIC800 PIC801 PIC810 PIC811 Switching Regulator 8A, 400V Power Output Stages APPLICATIONS: FEATURES P IC 8 0 0 / 8 0 1 -H ig h voltage B u c k or F lyba ck regulator. PIC&10/811 - S i n g l e ended half bridge 2 required , Full bridge (4 required),
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100kHz)
PIC800
PIC801
PIC810
PIC811
PIC800/801-High
10/811-Single
PIC811
vk15
PUSH PULL PIC
100-C
unitrode flyback regulator
400V voltage regulator
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IN6098
Abstract: IN6097 1N6097 1N6098
Text: 1N6097 1N6098 POWER SCHOTTKY RECTIFIERS 50 Amp, 30 and 40 Volts D ESCRIPTION Unitrode's series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Unitrode high conductivity design, using a heavy copper top post and 4 point crimp, ensures cool
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1N6097
IN6098
1N6097
1N6097,
1N6098
IN6098
IN6097
1N6098
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ec66
Abstract: 100-C UES1301 UES1302 UES1303 ec-66 ues1301-1303
Text: RECTIFIERS UES1301-UES1303 High Efficiency, 6A DESCRIPTION Now power rectifiers in axial leaded package to meet the most demanding switching applications. An industrial product with military reliability. FEATURES • Very Low Forward Voltage • Very Fast Recovery Times
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UES1301-UES1303
UES1301
UES1302
UES1303
10/xs
100ms
ec66
100-C
UES1301
UES1302
UES1303
ec-66
ues1301-1303
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