Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

MJ10014

Abstract: MJ10013 MJ-10013
Contextual Info: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10013 MJ10014 The MJ10013 and MJ10014 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10016HX

Contextual Info: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall

MJH11021 equivalent

Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)

MJ10016

Abstract: MJ10015 1N4937
Contextual Info: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for

npn darlington 400v 10a

Abstract: npn darlington 6A 400V MJ10012 400V to 6V DC Regulator Darlington Transistors MJ-10012
Contextual Info: Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high current ・DARLINGTON APPLICATIONS ・Automotive ignition ・Switching regulator ・Motor control applications PINNING

Contextual Info: MOTOROLA O rder this docum ent by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

MJ900

Abstract: MJ1000 MJ901 3001 pnp MJ1001 MJ3001 B 817 c MJ2500 MJ2501 2N6053
Contextual Info: - , SGS-THOMSON MJ900 901 1 Ë fKl MILifgTF!Hi ili] S MJ1000/1001 COMPLEMENTARY POWER DARLINGTONS lE S C R lP T IO N tie MJ900, MJ901, MJ1000 and MJ1001 are siii:on epitaxial-base transistors in monolithic Darlingon configuration, and are mounted in Jedec TO-3

MJ1000

Abstract: MJ1001 MJ900 TRANSISTOR mj900 MJ901 motorola MJ1000
Contextual Info: MOTOROLA Order this document by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE

MJ10016

Abstract: MJ10015 mj100 transistor MJ10015
Contextual Info: SOLID STATE INC. 4 6 FA R R A N D S T R E E T B LO O M FIE LD , N E W J E R S E Y 0 7 0 0 3 www.solidstateinc.com SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10015 The MJ10015 and MJ10016 darlington transistors are designed

automotive ignition tip162

Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

Contextual Info: ¿S&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10015 The MJ10015 and MJ10016 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

TRANSISTOR mj900

Abstract: MJ901 MJ900 mj1001
Contextual Info: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY

C2688

Abstract: motorola tRANSISTOR c2688 mj10012 motorola 1N3947 MJ10012 2N3713 MOTOROLA tRANSISTOR c2688 MJ-10012 1N39 C2688(1)M
Contextual Info: MOTOROLA Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: npn darlington transistor 150 watts 1N5825 MJ10012 MJH10012 MJH11017 MJH11018 MJH11019 MJH11020 MJH11021
Contextual Info: MOTOROLA Order this document by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

mje2501

Abstract: MJE370 MJ12005 MJE520 MJ12002 MJ12004 MJ13330 MJ10016 MJ10009 MJ13335
Contextual Info: 0258354 ADVANCED SEM ICOND UCTOR 82D 00055 C f l l f t C O I V 1- — -ADVANCED TilAftiSISTOilU Pd @ Tc=25°C DEVICE TYPE POLARITY NO. MJ10005 NPN MJ10006 NPN MJ10007 NPN MJ10008 NPN MJ10009 NPN MJ10012 NPN MJ10013 NPN MJ10014

MJ901

Abstract: MJ1000 Complementary Darlington current Amplifier MJ900 adc 515 SILICON COMPLEMENTARY transistors darlington MJ1001 darlington complementary power amplifier complementary
Contextual Info: MJ900, MJ901 PNP SILICON MJ1000, MJ1001 NPN 8.0 A M PER E D A R L IN G T O N POWER T R A N SIS T O R S C O M P L E M E N T A R Y SILIC O N M EDIUM -POW ER C O M P LEM EN T A R Y SIL IC O N T R A N SIS T O R S . . . for use as output devices in complementary general purpose

MJ1000

Abstract: MJ900 MJ1001 MJ901
Contextual Info: MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and

MJ1000

Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
Contextual Info: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and

mj10012

Abstract: MJ-10012
Contextual Info: NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10012 is a high voltage, high-current darlington transistor designed for automotive ignition,switching regulator and motor con­ trol applications. NPN MJ10012 FEATURES: Continuous Collector Current - lc = 10 A

MJ10016

Abstract: MJ10015 Darlington 40A Darlington NPN 250W NPN 400V 40A
Contextual Info: MJ10015 & MJ10016 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10015 and MJ10016 are Darlington transistors in a TO3 type package designed for high− voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch−mode applications.

Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,

mj10015

Abstract: mj10016 j10016 mj10 BTA 316 transistor
Contextual Info: MOTOROLA Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

mj10016

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,