KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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transistor ktd718
Abstract: KTB688 KTD718
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ
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KTB688
KTD718.
100x100x2mm
transistor ktd718
KTB688
KTD718
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ktd718
Abstract: ktd718 datasheet transistor ktd718 KTB688
Text: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ
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KTD718
KTB688.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
ktd718
ktd718 datasheet
transistor ktd718
KTB688
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al205
Abstract: KTA1036 KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING
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KTC2016
KTA1036.
al205
KTA1036
KTC2016
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC
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KTB688
KTD718.
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25
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KTD718B
KTB688B.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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KTB778
Abstract: transistor ktb778 KTD998 KTB778 transistor KTb778 datasheet common emitter amplifier transistor ktD998 IC 545 305
Text: SEMICONDUCTOR KTB778 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Complementary to KTD998. W F U E ・Recommended for 45～50W Audio Frequency W V M I K N D J L S T B G Amplifier Output Stage. MAXIMUM RATING Ta=25℃
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KTB778
KTD998.
100ms
500ms
KTB778
transistor ktb778
KTD998
KTB778 transistor
KTb778 datasheet
common emitter amplifier
transistor ktD998
IC 545 305
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KTB988
Abstract: KTD1351 2.T transistor planar
Text: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).
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KTB988
KTD1351.
KTB988
KTD1351
2.T transistor planar
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KTD2058
Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 DATASHEET
KTB1
KTD2058 Y
KTB1366
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Untitled
Abstract: No abstract text available
Text: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.
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2SC519A
2SC520A
2SC521A
00D7L
2SC519A)
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2SC520A
Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
Text: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,
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-130V,
-110V
2SA656A)
2SC519A,
2SC520A
2SC521A.
2SA656A
2SA657A
2SA658A
2SA656A
TOSHIBA TV IC regulator
2SC521A
2SA658A
tv toshiba
110723
2SC519A
AC73
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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KTA1036
KTC2016.
220AB
300x300x2mm
200x200x2mm
100x100x1mm
50x50xlmm
KTA1036
KTC2016
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2SC519A
Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.
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2SC519A
2SC519A)
2SC520A
2SC521A
VCC-30V
2SC519A,
521A
2SC521A
2sc5
520a
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2sb688
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c
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2SB688
2SD718.
Tc-25
300X300x2mmA/
2sb688
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KTD718
Abstract: KTB688 transistor ktd718
Text: SEMICONDUCTOR T E C H N IC A L D A T A KTD718 t r ip le d iffu s e d n p n t r a n s is t o r HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45—50W Audio Frequency Amplifier. • Output Stage. • Complementary to KTB688. MAXIMUM RATINGS Ta=25°C
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KTD718
KTB688.
300x300x2mm
200x200x2mm
100x100x2mm
KTD718
KTB688
transistor ktd718
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2SC779
Abstract: transistor 2SC779 TRANSISTOR 2SC ls 11m
Text: 2SC SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o o o ««£*»*«» o H ig h 779 4 •>t- v r m INDUSTRIAL APPLICATIONS Tksr-tofatonm V o lta g e S w it c h in g Pow er and A m p lifie r , TV H o r iz o n ta l H ig h V o lta g e O u tp u t U n it in mm A p p lic a
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TC-16A
TB-83
2-13A1A
300ms
2SC779
2SC779-R
2SC779-0
2SC779-Y
10/is
transistor 2SC779
TRANSISTOR 2SC
ls 11m
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation
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KTB988
KTD1351.
50x50xlmm
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KTD2058 Y
Abstract: KTD2058 KTB1366
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)
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KTD2058
KTB1366.
220IS
50x50xlmm
KTD2058 Y
KTD2058
KTB1366
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE<sat =1.0V Max.) (IC=2A, IB=0.2A). • Complementary to KTA1036. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)
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KTC2016
KTA1036.
220AB
SYMBO0x50
1x50xlmm
KTA1036
KTC2016
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E TE /O P TO dF J t GT75SD 000777^ D o t - 3 y~/ 3 56C 07779 SILIC O N NPN T R IP LE D IFFU SED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. / , 2.0 FEATURES: . Complementary to 2SB688.
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GT75SD
2SB688.
300X300X2m
300X300X8m
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Untitled
Abstract: No abstract text available
Text: Sk “TOSHIB A -CDISCKLTL/OH IÖ F 9097250 T O S H IB A D IS C R E T E /O P T O 2SA1328 TO TT SS D D00731b 56C 073L6 D 7 " - 3 _ SILICON PNP EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 Q 3 M A X . 0 3 .6 ± 0.2 FEATURES:
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2SA1328
D00731b
073L6
2SC3345
300X300X2mm
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2SD111
Abstract: 2SD110 2SD1100 D-111 transistor 2SD110-0 2SD110-Y 2sd1102 sd111
Text: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR 23D y+ s*n O O do - D O ay^ -iS 1 Is I i ffl o * * *• v-tm A ud io Power A m p li f ie r , Power S w itc h in g DC - DC C o n v e rte r and R e g u la t o r A p p l i c a t i o n * , • • • = a is ? K W E -e -f
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2SD110
2SD111
28D110
00X200X2m
00X300X2m
2SD111
2SD1100
D-111 transistor
2SD110-0
2SD110-Y
2sd1102
sd111
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