VTB6061

Contextual Info: VTB6061 VTB Process Photodiodes _ P A C K A G E D IM E N SIO N S CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 37.7 mm2| P RO D U CT D ESC R IP T IO N Large area planar silicon photodiode in a "flat” window, dual lead T O -8 pack­

Contextual Info: VTB6061 VTB Process Photodiodes PACKAGE DIM ENSIONS inch mm CASE 15 TO-8 HERMETIC PRODUCT DESCRIPTION CHIP ACTIVE AREA: .058 in2 (37.7 mm2| Large area planarsilicon photodiode in a "flat” window, dual lead TO-8 pack­ age. Cathode is common to the case.

Contextual Info: VTP331OLA VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .0 2 3 (0 .5 8 ) _ .037 ( 0 .9 4 ) NOM. .1 6 0 (4 .0 6 ) .0 2 0 (0 .5 1 ) .2 0 5 (5 .2 1 ) PRODUCT DESCRIPTION CASE 50A LONG T-1 CHIP ACTIVE AREA: .0011 in2 (0.684 mm2) Small area planar silicon photodiode in

Contextual Info: VTB100 VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CATHODE MARK 4 5 ° X .0 35 ( 0 .8 9 ) - 1 .0 0 (2 5 .4 ) MINIMUM 1-.2 30 (5 .8 4 ) SENSITIVE .2 10 (5 .3 3 ) SURFACE + Ì_ ANODE .2 8 5 (7 .2 4 ) £3#&Vï §§ •105 (2 .6 7 ) .0 2 0

EG*G Vactec

Abstract: optl VTP8551
Contextual Info: VTP Process Photodiodes VTP8551 PACKAGE DIMENSIONS inch mm 18 2 ( 4 .6 2 ) , 17 2 ( 4 . 3 7 ) r ( 0 .5 8 ) .0 3 9 ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) ( 1 .0 0 ) ' NOM. ( 2 .4 9 ) .0 3 2 ( 0 .8 1 ) *" ' O PTICA L (£ I r 1 •16 2 ( 4 .1 1 ) .1 5 2 ( 3 .3 6 ) Ì +

VTL23DxA

Abstract: phototransistor visible light VTL2301A22 VTL23D0A21 VTL23D0A22 VTL23D1A00 VTL23D1A22 VTL23D2A00 VTL23D3A00 OPTICAL INTERRUPTER position
Contextual Info: Transmissive Optoswitch V T L 23 D x A Series Slotted Switch — .425" High PRODUCT DESCRIPTION This series of interrupter type transmissive optoswitches combines an infrared emitting diode IRED with an NPN phototransistor in an opaque plastic case with two mounting tabs.