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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 5bE D • 303DbDci G0 010 34 455 H V C T VT B 1 1 1 2B I, 13BI VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. The package incorporates an infrared rejection filter. Chip is isolated from	OCR Scan	303DbDci VTB1113BI VTB1112BI	PDF
DDD1222 Abstract: VTE3372LA VTE3374LA Text: SbE D 303DbDT DDD1222 STS GaAIAs Infrared Emitting Diodes VCT VTE3372LA, 74LA Long T-1 Plastic Package — 880 nm E 6 & 6 VACTEC - T-H» - I 3 h PACKAGE DIMENSIONS inch mm .2 2 .0 6 (5 .6 ) ( 1 .5 ) ( 0 .5 *) ( 0 . 4 -3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7 .1 2 6	OCR Scan	DDD1222 VTE3372LA, VTE3372LA VTE3374LA VTE3372LA VTE3374LA	PDF
VTB5050B Abstract: VTB5051B Text: SbE T> m 303DbDT 0001041 b'IS » V C T / V T B 5 0 5 0 B , 5051 B VTB Process Photodiodes E G & G VACTEC P A C K A G E D IM E N S IO N S inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) P R O D U C T D E S C R IP T IO N Planar silicon photodiode in a “flat" win	OCR Scan	303DbDT VTB5050B, VTB5050B VTB5051B VTB5050B VTB5051B	PDF
Untitled Abstract: No abstract text available Text: SbE D • 303DbD^ 0Ü D llfl3 .050" NPN Phototransistors HVCT VTT 111 2, 13, 14 TO-46 Lensed Package E TES G 8. G V A C T E C T—47—67 PACKAGE DIMENSIONS inch mm CASE 3 PRODUCT DESCRIPTION T0-4G HERMETIC (LENSED) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS ■	OCR Scan	303DbD^ VTT1112 VTT1113 VTT1114	PDF
A1W 73 Abstract: .7J4 VTB100 Text: VTB Process Photodiodes V T B 100 P A C K A G E D IM E N S IO N S cathode: 45° mark X .0 3 5 inch mm 1 .0 0 (0 .8 9 ) Ï - \ CATHODE, .2 3 0 (5 .8 4 ) SENSITIVE .2 1 0 (5 .3 3 ) SURFACE + jr_ AN O D E .2 8 5 (7 .2 4 ) .2 6 5 (6 .7 3 )’ .1 6 2	OCR Scan	VTB100 3030bCH A1W 73 .7J4 VTB100	PDF
slmn Abstract: InGaAs PIN photodiode 2600 nm Text: J k EGgG JUDSON Extended InGaAs Photodiode Operating Notes 1.0 to 2.6 \|im General Package Options J18 Series detectors are high quality extended wavelength Indium Gallium Arsenide photo diodes for use in the wavelength range from 800 to 2600 nanometers.	OCR Scan	J18-18I-R250U-2 J18-18I-R01M-2 J18-5I-R02M-2 3G30bQS t35tt0 303DbDS DnoD33E slmn InGaAs PIN photodiode 2600 nm	PDF