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    3052 MOSFET Search Results

    3052 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    3052 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A2730

    Abstract: 64205 3052 mosfet
    Text: SPICE Device Model SiE816DF Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiE816DF S-82057-Rev. 01-Sep-08 A2730 64205 3052 mosfet PDF

    LC5523F

    Abstract: 3052 voltage regulator
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup


    Original     		LC5523F SSE-24682 LC5523F 3052 voltage regulator PDF

    3052 voltage regulator

    Abstract: LC5523F SANKEN 3052 "Sanken Rectifiers"
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup


    Original     		LC5523F 3052 voltage regulator LC5523F SANKEN 3052 "Sanken Rectifiers" PDF

    GX-0300-55

    Abstract: LTD M250 B07T MRF373R1 MRF373SR1 NI-360S NI-360
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these


    Original     		MRF373/D MRF373R1 MRF373SR1 MRF373R1 GX-0300-55 LTD M250 B07T MRF373SR1 NI-360S NI-360 PDF

    S-82057

    Abstract: A2730
    Text: SPICE Device Model SiE816DF Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiE816DF 18-Jul-08 S-82057 A2730 PDF

    thermistor r5t

    Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
    Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010 PDF

    MOSFET J132

    Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
    Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373/D MRF373 MRF373S MRF373S MRF373/D MOSFET J132 mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503 PDF

    c19a

    Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
    Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.


    Original     		MRF373R1 MRF373SR1 MRF373R1 MRF373/D c19a motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373SR1 PDF

    MRF373

    Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
    Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13 PDF

    MRF373R1

    Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these


    Original     		MRF373/D MRF373R1 MRF373SR1 MRF373R1 C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5523F LC5523F-DS PDF

    AN 7062

    Abstract: LC5523F
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5523F LC5523F-DS, AN 7062 LC5523F PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit


    Original     		LC5525F LC5525F-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit


    Original     		LC5523F LC5523F-DS PDF

    AN 7062

    Abstract: 3052 voltage regulator TO220F-7
    Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5525F LC5525F, AN 7062 3052 voltage regulator TO220F-7 PDF

    LC5523

    Abstract: LC550
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5523F LC5523F-DS, LC5523 LC550 PDF

    3052 voltage regulator

    Abstract: No abstract text available
    Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5525F LC5525F-DS 3052 voltage regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit


    Original     		LC5523F LC5523F-DS PDF

    TO220F-7

    Abstract: No abstract text available
    Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5525F LC5525F, TO220F-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5523F LC5523F-DS PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5525F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-time control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup circuit


    Original     		LC5525F LC5525F-DS PDF

    AN 7062

    Abstract: No abstract text available
    Text: LC5523F Single-Stage Power Factor Corrected Off-Line Switching Regulator IC Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated soft-start circuit (reduces power stress during


    Original     		LC5523F LC5523F-DS AN 7062 PDF

    irl120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		MRF9130L MRF9130LR3 MRF9130LSR3 irl120 PDF

    Untitled

    Abstract: No abstract text available
    Text: LC5540LF Series Single-Stage Power Factor Corrected Off-Line Switching Regulator ICs Features and Benefits Description • Integrated on-width control circuit it realizes high power factor by average current control • Integrated startup circuit (no external startup


    Original     		LC5540LF LC5540LF-DS PDF