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    307SD Search Results

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    307SD Price and Stock

    Samtec Inc TSW-103-07-S-D

    CONN HEADER VERT 6POS 2.54MM
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    DigiKey TSW-103-07-S-D Bulk 1,163 1
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    Mouser Electronics TSW-103-07-S-D 4,993
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    Newark TSW-103-07-S-D Bulk 52 10
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    Samtec Inc HTSW-103-07-S-D

    CONN HEADER VERT 6POS 2.54MM
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    DigiKey HTSW-103-07-S-D Bag 820 1
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    Mouser Electronics HTSW-103-07-S-D 270
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    Samtec Inc HTSW-113-07-S-D

    CONN HEADER VERT 26POS 2.54MM
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    DigiKey HTSW-113-07-S-D Bag 1 1
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    Mouser Electronics HTSW-113-07-S-D 5
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    Samtec Inc LST-123-07-S-D

    .100" LOCKING HERMAPHRODITIC TER
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    DigiKey LST-123-07-S-D Bulk 1
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    Master Electronics LST-123-07-S-D
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    Sager LST-123-07-S-D 1
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    Samtec Inc ZSS-103-07-S-D-1115

    CONN HDR .100" 6POS
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    DigiKey ZSS-103-07-S-D-1115 Bulk 1
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    Avnet Americas ZSS-103-07-S-D-1115 Bulk 1
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    Newark ZSS-103-07-S-D-1115 Bulk 1
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    Master Electronics ZSS-103-07-S-D-1115
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    Sager ZSS-103-07-S-D-1115 133 1
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    307SD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 24.73 19.65 1 . 2 7 x 1 2 = 15.24 1.27 MODIFICATIONS - - - TOLERANCE PART NUMBER 2954397 PART NUMBER WINSLOW INTERNATIONAL LTD R.S. COMPONENTS PO BOX 99 CORBY NORTHANTS 2954397 DESCRIPTION IC Socket Adaptor, Yamaichi, PLCC suface mount, IC120-0524-307SD


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    PDF IC120-0524-307SD

    3N170

    Abstract: Hall 01E 3N171
    Text: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re­


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    PDF 3fi750fll 3N170, 3N171 3N170 3N170 Hall 01E 3N171

    CNY47A

    Abstract: CNY47 cny47aoptoelectronic cny47a-optoelectronic
    Text: E SOLID STATE 01 DE I Optoelectronic Specifications , 307SD Û 1 D D n a 4 b 4 | -r - m - s s Photon Coupled Isolator CNY47, CNY47A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor SEE NOTE The GE Solid State CNY47 and CNY47A are gallium arsenide


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    PDF -r-41-33 CNY47 CNY47A CNY47A 33mW/Â 100S2) 50fiA. 0110b 13fl7S0fll cny47aoptoelectronic cny47a-optoelectronic

    2N5305

    Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
    Text: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are


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    PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98

    low power astable multivibrator ic

    Abstract: 1IB0
    Text: G E SOLID STATE Dl 387 5 08 1 G E S O L I D S T A T E 3fl7SDfll □D13242 fi | ~ . °1E 13242 T CD4047B Types CMOS Low-Power Monostable/Astable Multivibrator High Voltage Types 20-Volt Rating TheRCA-CD4047B consists of a gatable astable m ultivibrator with logic techni­


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    PDF D13242 CD4047B 20-Volt TheRCA-CD4047B CD4047B. low power astable multivibrator ic 1IB0

    IRFF121

    Abstract: IRFF120 IRFF122 IRFF123
    Text: D E | 3Ö7SDÖ1 0D1ASS4 7 f □ 1 3875081 6 E SOLID STATE 0 1E 18254 D T-ïf-O l - Standard Power M OSFETs IRFF120, IRFF121, IRFF122, IRFF123 File Number 1563 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode


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    PDF 001fl5S4 IRFF120, IRFF121, IRFF122, IRFF123 0V-100V IRFF122 IRFF123 IRFF121 IRFF120

    CD45108

    Abstract: CD40718 MC14510 cmos mc14516 MC14516 92CS-24824 RCA-CD4510B CD4516 15-V CD451
    Text: G E SOLID STATE 01 38 75 081 DE I 3Û7S □Al GQ133S7 3 01E G E S O L I D ST A T E 13357 D T ' CD4510B, CD4516B Types CMOS Presettable Up/Down Counters H igh-Voltage Types 2 0 -V o lt Rating C D4510B .Features: • Medium-speed operation ~ fci_ = 8 M Hz ty p . a t 10 V


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    PDF H5-33 20-Volt CD4510B---BCD CD4516B---Binary RCA-CD4510B CD4516 CD4510B c04510/16 CD40718. I7I94R3 CD45108 CD40718 MC14510 cmos mc14516 MC14516 92CS-24824 15-V CD451

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    RCA-CA3086

    Abstract: RCA-CA3018 ICAN-5296 RCA CA3086 ICAN529
    Text: G E SOLID STATE DI m r ia y o • ■- D E | 3075001 D014t.l0 5 | ■ - - - CA3086 — — —'■ ■■■— 'T '- H 'S - Z S General-Purpose N-P-N Transistor Array Three Isolated Transistors and One D iffe re n tia lly Connected Transistor Pair


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    PDF D014t CA3086 120-MHz ICAN-5296 RCA-CA3018 RCA-CA3086 -I5I90 92CS-- ICAN-5296 RCA CA3086 ICAN529

    CDP1852

    Abstract: 307SD
    Text: G E SO L I D ST AT E 17E D • 3Ô7S0Ô1 002S117 T ■ High-Reliabillly CMOS LSI CDP1852/3, CDP1852C/3 "T 5Z^3'53> . c s i/ G I — ^ 24 — v D0 MODE — 2 23 - SR/SR 2 2 — D I7 010 — 3


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    PDF 002S117 CDP1852/3, CDP1852C/3 CDP1800-series CDP1852 307SD

    CDP1804

    Abstract: CDP6805
    Text: G E SOLID STATE D l D E I 3fl750fll O P l b b ? 1! fi _ :_ CDP68HC68R1, CDP68HC68R2 CMOS 128-Word CDP68HC68R1 and 'rWi>‘ 35 256-Word (CDP68HC68R2) by 8-Bit Static RAMs Product Preview TO P Random-Access Memories (RAMs) -


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    PDF 3fl750fll CDP68HC68R1, CDP68HC68R2 128-Word CDP68HC68R1) 256-Word CDP68HC68R2) 92CS-37865 CDP68HC68R2 CDP1804 CDP6805

    gp516

    Abstract: GP514
    Text: 17E D 3075001 0G2535b h U Radiation-Hardened Hlgh-Rellability ICs G E SOLID STATE GP514/1RZ Advance Information T - S 2 - 1 3 - S High-Reliability, Radiation-Hardened CMOS/SOS Double-Address Select Unit Aerospace C lass S Screening Features: • M ultiplexes two seq uencer output fields


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    PDF 0G2535b GP514/1RZ 64-lead GP514, 100//A gp516 GP514

    GES5307

    Abstract: 2n5307 2N5308 2N5308A GES5308 GES5308A
    Text: ~q £ SOLID STATE 01 DE 1 3fl750âl 0017^51 S | 3875081 G E SOLID STATE 01E 17951 D Signal Transistors 2N5307, 8, 8A, GES5307, 8, 8A -p z i Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5307, 08, 08A and GES5307, 8, and 8A are planar, epitaxial, passivated NPN silicon Darlington transis­


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    PDF 2N5307, GES5307, 2N5307 GES5307 92CS-42626 10-Typical 92CS-42A29 2N5308 2N5308A GES5308 GES5308A

    RCA9202C

    Abstract: ignition tci TCI ignition RCA*9202A RCA9202A RCA9202B
    Text: ~G E SOLID STATE- 3875081 G E ‘ SOLID — STATE — " """ 3a7SDfll 01E 17315 D DD1731S r - 3 3 *2 ? Darlington Power Transistors F ile N u m b e r 1414 RCA9202A, RCA9202B, RCA9202C


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    PDF RCA9202A, RCA9202B, RCA9202C 92CS-39969 TQ-220AB RCA9202C* IG3-39317 9ZCS-33322 RCA9202C ignition tci TCI ignition RCA*9202A RCA9202A RCA9202B

    str 765 RT

    Abstract: DP1802
    Text: G E SO LI D ST A T E 17E D • 3075001 G0250b7 T ■ Hlgh-Reliability CMOS LSI CDP1802A/3, CDP1802AC/3 0% High-Reliability CMOS 8-Bit Microprocessor For U s j in Aerospace, M ilitary, and Critical Industrial Equipm ent


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    PDF G0250b7 CDP1802A/3, CDP1802AC/3 COP1802A CDP1802AC str 765 RT DP1802