136S6
Abstract: CNY51 DIODE RK 306 TA-100
Text: G E SOLID STATE □1 Optoelectronic Specifications 3fi750fll oonaso b I DEf T -4 1 -8 3 Photon Coupled Isolator CNY51 19- Ga As Infrared Em itting Diode & NPN Silicon Photo-T ransistor -— The G E Solid State CNY51 consists of a gallium arsenide, infrared
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3fi750fll
CNY51
CNY51
3fl75Dfll
136S6
DIODE RK 306
TA-100
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040M1
Abstract: No abstract text available
Text: 3875081 G E SOLID S T A T E D ! T~33~ 3 DE |3fl7S0fll 0 D l ci4SD 3 HIGH POWER 2N3772 NPN POWER TRANSISTORS 60 VOLTS 20 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch
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2N3772
O-204AA
3fi750fll
040M1
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MJE16004
Abstract: 690 lc 100-C MJE16002 mje16 80ni
Text: ~ÔÎ 387 508 1 G E SOLID STATE DE | 3 Ö 7 S D Ö 1 0017000 h 01E 17080 dT- 3 3 - / 3 Sw ftcâM aX Power Transistors. MJE16002, MJE16004 5 - A S w itc h M a jfW File N um ber 1842 P o w e r T r a n s is to r s High-Voltage N-P-N Types for Off-Line Power Supplies
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DT-33
MJE16002,
MJE16004
9ZCS-39969
O-220AB
MJE16002
690 lc
100-C
mje16
80ni
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transistor 123 DL
Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
Text: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current
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2N6027
2N6028,
GES6027,
GES6028
2N6027,
2N6028
GES6028
92CS-4234Â
transistor 123 DL
equivalent transistor of 2n6027
GE 2N6027
transistor put 2n6028
ujt 2N6027
PUT 2N6028
2n6027 as PUT Oscillator
PUT 2N6027
Programmable Unijunction Transistor
SCR CONTROL BY PUT CIRCUIT
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4392
Abstract: 2N4393 2N4391-93 2N4392 4392 dl 2N4391 ITE4393 ITE4392
Text: 01 G E SOLI» STATE DE 13fl?50fll D01DT7Ô °ì | 3875081 G E SOLID STATE 01E 10978 S 2N4391- 2N4393, S ITE4391- ITE4393 T- 35 - 2.5 7 N-Channel JFET Switch « n + u fc ri ABSOLUTE MAXIMUM RATINGS FEATURES • rd s o n < 3 0 0 D (Ta = 25°C unless otherwise noted)
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3fl750fll
2N4391
-2N4393,
ITE4391-
ITE4393
2N4391)
100pA
10VAC
2N4392,
2N4393)
4392
2N4393
2N4391-93
2N4392
4392 dl
ITE4393
ITE4392
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RFM6N45
Abstract: RFM6N50 RFP6N45 RFP6N50
Text: Hi 3875081 G E SOLID 3fl7SGfll DOIAIS^ 4 T STATE Standard Power MOSFETs 01E 18129 D r-3 ? -// -_ •39-/3 RFM6N45.RFM6N50, RFP6N45, RFP6N50 File N u m b e r 1494 Power MOS Field-Effect Transistors TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors
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RFM6N45
-RFM6N50,
RFP6N45,
RFP6N50
RFM6N50
RFP6N45
RFP6N50*
RFM6N45,
RFM6N50,
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Untitled
Abstract: No abstract text available
Text: G E SOLID STATE 17E D • 3S7SQS1 0055522 6 T W P i 'O C s * SECTION 1 INTRODUCTION 1.1 GENERAL The C D P 68H C 05C 4 H C M O S M icrocom puter is a m em ber of the C D P 68H C 05 Fam ily of low-cost single-chip microcomputers. This 8-bit m icrocom puter contains an on-chip
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-38140R
-38140R
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GP503
Abstract: A750F ST l 9143
Text: 1 ?E D Radiation-Hardenedd High-Reliability ICs _ _ • ^ 3 fl7 S0 â l ^ SOLID 0 0 5 S3 E4 4 STATE GP503/1RZ Advance Information T - ^ - Z 0\ High-Reliability, Radiation-Hardened C M O S/SO S 8 x 8-Bit Expandable Multiplier Aerospace Class S Screening
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GP503/1RZ
64-lead
GP503/1RZ
GP503
A750F
ST l 9143
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2N6788
Abstract: No abstract text available
Text: 387 5081 G E SOLID STATE Standard Power MOSFETs D1 _ D E1 | 3875081 00 1 8 4 13 1 2N6788 File Num ber 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL E N H A N C EM EN T M O DE 6 .0 A , 100V
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2N6788
2N6788
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PC 74HC139
Abstract: 74hc139
Text: G E SOLID STATE D1 Technical D a ta - DE~| 3075001 DGllSbl 3 ï D T “6>áj-ai-‘5'5" — . CD54/74HC139 CD54/74HCT139 File N u m b e r 1545 High-Speed CMOS Logic Dual 2-to-4 Line Decoder/Demultiplexer AO 2 tl4 Typ e Features: • M ultifunction Capability
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CD54/74HC139
CD54/74HCT139
CD74HC/HCT:
CD54/74HCT139
54/74HC
54/74HCT
PC 74HC139
74hc139
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