DPSD16MX8RY5
Abstract: No abstract text available
Text: 16Mx8, 7.5 - 15ns, P12, M-Densus 30A181-22 G M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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16Mx8,
30A181-22
DPSD16MX8RY5
DPSD16MX8RY5
53A001-00
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30A215-00
Abstract: No abstract text available
Text: 32Mx4, 10 - 12ns, M-Densus 30A181-02 E M-Densus 512 Megabit Synchronous DRAM DPSD128MX4WY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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32Mx4,
30A181-02
DPSD128MX4WY5
64Meg
DPSD128MX4WY5
53A001-00
30A215-00
30A215-00
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Untitled
Abstract: No abstract text available
Text: 16Mx8, 10 - 12ns, M-Densus 30A181-22 D M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space
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16Mx8,
30A181-22
DPSD16MX8RY5
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Untitled
Abstract: No abstract text available
Text: 16Mx8, 10 - 12ns, M-Densus 30A181-32 D M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space
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16Mx8,
30A181-32
DPSD16MX8RKY5
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DENSE-PAC
Abstract: SO-DIMM 144-pin
Text: 16Mx64, 66MHz, SODIMM 30A185-00 C 128 Megabyte SDRAM SODIMM DPSD16MX64RSW5 DESCRIPTION: PIN-OUT DIAGRAM The JEDEC compatible DPSD16MX64RSW5 is a high speed 128 Megabyte CMOS Synchronous DRAM Small Outline DIMM utilizing Dense-Pac’s new and innovative 3-D space saving
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16Mx64,
66MHz,
30A185-00
DPSD16MX64RSW5
DPSD16MX64RSW5
DPSD16MXRSW5
DENSE-PAC
SO-DIMM 144-pin
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DPSD8MX16RSY5
Abstract: 30A22 53A001-00 sdram 4 bank 4096 16
Text: 32Mx4, 10 - 12ns, M-Densus 30A181-02 E M-Densus 128 Megabit SSTL SDRAM DPSD8MX16RSY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space
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32Mx4,
30A181-02
DPSD8MX16RSY5
DPSD8MX16RSY5
53A001-00
30A220-01
30A22
sdram 4 bank 4096 16
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32MX4
Abstract: sdram military DPSD32MX4RY5 sdram 4 bank 4096 16
Text: 32Mx4, 7.5 - 15ns, P12, M-Densus 30A181-02 H 128 Megabit Synchronous DRAM DPSD32MX4RY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed
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32Mx4,
30A181-02
DPSD32MX4RY5
DPSD32MX4RY5
A181-02
32MX4
sdram military
sdram 4 bank 4096 16
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Untitled
Abstract: No abstract text available
Text: 16Mx64, 10 - 12ns, DIMM 30A187-00 C 128 Megabyte SDRAM DIMM DPSD16MX64RW DESCRIPTION: The JEDEC compatible DPSD16MX64RW is a high speed 128 Megabyte CMOS Synchronous DRAM DIMM, consists of sixteen 4Mx4x4 SDRAM devices. These modules offer substantial advances in DRAM operating performance, including the
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16Mx64,
30A187-00
DPSD16MX64RW
DPSD16MX64RW
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sdram 4 bank 4096 16
Abstract: DPSD8MX16RSKY5
Text: 32Mx4, 10 - 12ns, M-Densus 30A181-02 E M-Densus 128 Megabit SDRAM w/SSTL DPSD8MX16RSKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space
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32Mx4,
30A181-02
DPSD8MX16RSKY5
DPSD8MX16RSKY5
53A001-00
30A220-11
sdram 4 bank 4096 16
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Untitled
Abstract: No abstract text available
Text: 256Kx8 ROM, 32Kx8 SRAM, 300/500ns, TSOP 30A183-00 A 256Kx8 FLASH/32Kx8 SRAM Combo Memory DP59CF232 DESCRIPTION: The DP59CF232 is a combination memory chip consist of 2M-bit Flash Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory
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256Kx8
32Kx8
300/500ns,
30A183-00
FLASH/32Kx8
DP59CF232
DP59CF232
256K-bit
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DPSD64MX4RY5
Abstract: No abstract text available
Text: 64Mx4, 7.5 - 15ns, P12, LP-Stack 30A181-04 A 256 Megabit Synchronous DRAM DPSD64MX4RY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed
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64Mx4,
30A181-04
DPSD64MX4RY5
DPSD64MX4RY5
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KCH30A18
Abstract: No abstract text available
Text: SBD T y p e : KCH KCH30A 30A18 OUTLINE DRAWING 30A 180V Tj:150°°C FEATURES *Similar to TO-247AC Case *Dual Diodes – Cathode Common *High Voltage Low Leakage Current *Low Forward Voltage Drop *Low Power Loss,High Efficiency *Tj=150 °C operation APPLICATIONS
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KCH30A18
KCH30A
O-247AC
100kH
KCH30A18
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DP5Z1MM8NKH3
Abstract: 00FIH
Text: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’
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200ns,
30A189-01
50-pin
DP5Z1MM8NKH3
00FIH
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Untitled
Abstract: No abstract text available
Text: 256Kx8 ROM, 32Kx8 SRAM, 300/500ns, TSOP 30A183-00 A 256Kx8 ROM/32Kx8 SRAM Combo Memory DP50CM232 DESCRIPTION: The DP50CM232 is a combination memory chip consist of 2M-bit Read Only Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory
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256Kx8
32Kx8
300/500ns,
30A183-00
ROM/32Kx8
DP50CM232
DP50CM232
256K-bit
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V7NB-30A180
Abstract: No abstract text available
Text: NON-ISOLATED DC/DC CONVERTERS 12V Input / Programmable Output / 30A VRM 9.0 Compatible V7NB-30A180 PRELIMINARY • High efficiency means less power dissipation • Remote on/off • 2-Wire Remote sense • Optional 5 bit voltage programming schemes o Intel VRM 9.x compatible 1.1V to 1.85V
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V7NB-30A180
V7NB-30A
V7NB-30A18M:
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Dense-Pac DP5Z1M
Abstract: 30A18
Text: 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It
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DP5Z1MW32PV3
DP5Z1MW32PV3
5555H
30A180-11
Dense-Pac DP5Z1M
30A18
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AL437
Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two
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8b/10b
OIF-SPI4-02
ORSPI4-1FE1036IES
ORSPI4-F1156IES
ORSPI4-2FE1036CES
ORSPI4-1FE1036CES
ORSPI4-2F1156CES
ORSPI4-1F1156CES
AL437
L97c
L235C
L103T
L41C
L140C
L94C
l165c
L239C
L43C
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L130C
Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two
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8b/10b
OIF-SPI4-02
1156-fpBGA
1036-ball
6A-07
1036fpSBGA
1036-ftSBGA)
06x-09
1036-pin
1036-pin
L130C
L74c
l31c
l97c
l65c
A311TC
l146c
l48c
L202C
L235C
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MI C R O S Y S T E MS 32 Megabit FLASH EEPROM DP5Z1MW32PV3 PRELIMINARY DESCRIPTION: The DP5Z1MW32PV3 "VERSA-STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It
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DP5Z1MW32PV3
DP5Z1MW32PV3
32PV3
120ns
150ns
200ns
30A180-11
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Untitled
Abstract: No abstract text available
Text: D E N S E “P A C m i c r o s ¥ s t E'M s 128 Megabit Synchronous DRAM High Density Memory Device dpsdi6MX8RY5 DESCRIPTION: The /H-Dtttsus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space
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DPSD16MX8RY5
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 256Kx8 FLASH/32Kx8 SRAM Combo Memory Mi C R OSYSTE MS DP59CF232 K DESCRIPTION: The DP59CF232K is a combination memory chip consist of 2M-bit Flash Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory organized as 32K words by 8 bits.
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OCR Scan
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256Kx8
FLASH/32Kx8
DP59CF232
DP59CF232K
256K-bit
30A184-10
DP59CF232K
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dpsd3
Abstract: No abstract text available
Text: DENSE-PAC / H - 'D éhshs M I C R O S Y S T Ii M S 128 Megabit Synchronous DRAM DPSD32MX4RY5 High Density Memory Device DESCRIPTION: The /H -D tttsus series is a family of interchangeable memory modules. The 128 Megabit SD R A M is a member of this family which utilizes the new and innovative space
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DPSD32MX4RY5
DPSD32MX4RY5
100MHz)
83MHz)
dpsd3
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119A5
Abstract: A1 D036 DU47
Text: DENSE-PAC M ICROSYSTEM S 64 Megabyte SDRAM DIMM DPSD8MX64RW DESCRIPTION: PIN-OUT DIAGRAM The JE DEC compatible DPSD8MX64RW is a high speed 64 Megabyte CMOS Synchronous DRAM DIMM, consists of eight 4Mx4x4 SDRAM devices. These modules offer substantial advances in DRAM operating performance, including the
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DPSD8MX64RW
A10/AP
100MHz
83MHz
66MHz
166-PIN
119A5
A1 D036
DU47
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30A18
Abstract: No abstract text available
Text: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'
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50-pin
150ns
200ns
30A159-01
30A18
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