MID-30A225
Abstract: No abstract text available
Text: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30A225 Package Dimensions The MID-30A225 is a NPN silicon phototransistor Unit : mm inches ψ3.00 (.118) 4.00 (.157) mounted in a lensed , special dark plastic package. 5.25 (.207) 1.00 (.040) 0.80±0.50 (.032±.020)
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MID-30A225
MID-30A225
40MIN
00MIN
940nm)
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Untitled
Abstract: No abstract text available
Text: 512Kx32/256Kx16/128Kx32, 150ns, TSOP STACK 30A229-00 A M-Densus High Density Memory Device 4 Megabit High Speed EEPROM DPE128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DPE128X32Y5 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may
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512Kx32/256Kx16/128Kx32,
150ns,
30A229-00
DPE128X32Y5
DPE128X32Y5
16-bit
32-bit
128-BWDW
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4mx32
Abstract: sdram 4 bank 4096 16 TSOP 66 Package DPSD4MX32RY5
Text: 4Mx32, 7.5 - 15ns, P12, M-Densus 30A225-02 A M-Densus 128 Megabit Synchronous DRAM DPSD4MX32RY5 High Density Memory Device PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member
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4Mx32,
30A225-02
DPSD4MX32RY5
DPSD4MX32RY5,
DPSD4MX32RY5
4mx32
sdram 4 bank 4096 16
TSOP 66 Package
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DPSD8MX16RKY5
Abstract: No abstract text available
Text: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-10 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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8Mx16,
30A220-10
DPSD8MX16RKY5
DPSD8MX16RKY5
53A001-00
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MID-30A22
Abstract: No abstract text available
Text: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-30A22 Package Dimensions Unit: mm inches The MID-30A22 is a NPN silicon phototransistor mou- ψ3.00 (.118) 4.00 (.157) nted in a lensed , special dark plastic package.The lensing effect of the package allows an acceptance half view
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MID-30A22
MID-30A22
40MIN
00MIN
940nm)
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Untitled
Abstract: No abstract text available
Text: 32Mx4, 50 - 60ns, TSOP Stack 30A221-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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32Mx4,
30A221-10
DP3ED32MX4RKY5
DP3ED32MX4RKY5
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30A221-00
Abstract: No abstract text available
Text: 32Mx4, 50 - 60ns, TSOP Stack 30A221-00 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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32Mx4,
30A221-00
DP3ED32MX4RY5
DP3ED32MX4RY5
30A221-00
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DPSD16MX8RKY5
Abstract: 53a00100
Text: 16Mx8, 7.5 - 15ns, P12, M-Densus 30A227-00 B M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RKY5 High Density Memory Device PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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16Mx8,
30A227-00
DPSD16MX8RKY5
DPSD16MX8RKY5
53A001-00
53a00100
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16Mx8 dram EDO
Abstract: code edo DENSE-PAC
Text: 16Mx8 50 - 60ns, TSOP Stack 30A228-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED16MX8RKY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family
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16Mx8
30A228-10
DP3ED16MX8RKY5
DP3ED16MX8RKY5
16Mx8 dram EDO
code edo
DENSE-PAC
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DPSD8MX16RY5
Abstract: No abstract text available
Text: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-00 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are
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8Mx16,
30A220-00
DPSD8MX16RY5
DPSD8MX16RY5
53A001-00
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DPSD8MX32TY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP
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DPSD8MX32TY5
IPC-A-610
53A001-00
80-Pin
30A225-12
DPSD8MX32TY5
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Untitled
Abstract: No abstract text available
Text: M-Densus 256 Megabit CMOS 3.3V EDO DRAM DP3ED32MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family which utilizes the new and innovative space saving TSOP
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DP3ED32MX8RY5
30A228-00
DP3ED32MX8RY5
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DPSD4MX32RY5
Abstract: 75P1
Text: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit Synchronous DRAM DPSD4MX32RY5 PIN-OUT DIAGRAM The LP-Stack series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP
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DPSD4MX32RY5
DPSD4MX32RY5,
A10/AP
20your
30A225-02
DPSD4MX32RY5
75P1
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AL437
Abstract: L97c L235C L103T L41C L140C L94C l165c L239C L43C
Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC November 2003 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two
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8b/10b
OIF-SPI4-02
ORSPI4-1FE1036IES
ORSPI4-F1156IES
ORSPI4-2FE1036CES
ORSPI4-1FE1036CES
ORSPI4-2F1156CES
ORSPI4-1F1156CES
AL437
L97c
L235C
L103T
L41C
L140C
L94C
l165c
L239C
L43C
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DPSD64MX8WKY5
Abstract: No abstract text available
Text: 512 Megabit Synchronous DRAM DPSD64MX8WKY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 32 Meg x 8 SDRAMs.
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DPSD64MX8WKY5
DPSD64MX8WKY5
30A226-10
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DPSD8MX32RY5
Abstract: No abstract text available
Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32RY5 PIN-OUT DIAGRAM DESCRIPTION: This 128 Megabit LP-Stack module, DPSD8MX32RY5, has been designed to allow 32 Output Data lines utilizing two 4 Meg x16 SDRAM TSOP monolithics. Utilizing this LP-Stack™ family
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DPSD8MX32RY5
PC100
PC133
30A225-04
DPSD8MX32RY5
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L130C
Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Text: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two
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8b/10b
OIF-SPI4-02
1156-fpBGA
1036-ball
6A-07
1036fpSBGA
1036-ftSBGA)
06x-09
1036-pin
1036-pin
L130C
L74c
l31c
l97c
l65c
A311TC
l146c
l48c
L202C
L235C
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sht22
Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
Text: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_
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EBSA-110
SHT20,
ebsa110
sht22
SHT12
5BE1
EL114
6nc3
SHT20
RAM128KX8
SHT13
VG-468
57BE2
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16mx4
Abstract: DPAC Technologies
Text: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS 3.3V EDO DRAM DP3ED32MX4RKY5 / DP3ED32MX4R8KY5 DESCRIPTION: The 64 Megabit based LP-Stack modules have been designed to fit in the same footprint as the 32 Meg x 4 DRAM TSOP monolithic. This allows the memory board designer
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DP3ED32MX4RKY5
DP3ED32MX4R8KY5
30A221-10
16mx4
DPAC Technologies
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC M icrosystem s /H-'De.nSÜS 12 8 Megabit SDRAM w /SSTL dpsd8M X1 6 RSKY5 ¡-¡¡gfo Density Memory Device DESCRIPTION: The /U-'Detmu series is a Jam Hy o f inteinhangeabJe m em oiym oduJes. The 128 M egab±SD RAM isam em b e r ofthjs6m j]yw hi±iutLljzesthenew and innovative qpace
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DPSD8MX16RSKY5
30A220-11
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS Mt n t »a /H-Dênsus dpddigmxsribys D 128 Megabit CM O S D D R SDRAM Aa "7\ ^ High Density Memory Device pd d 16m xsrsbys ADVANCED INFORMATION DESCRIPTION: The/U-'Datitu series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member
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DPDD16MX8RSBY5,
64Mbit
DPDD16MX8RLBY5/DPDD16MX8RSBY5
133MHz)
125MHz)
100MHz)
30A223-10
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Untitled
Abstract: No abstract text available
Text: M t n t» DENSE-PAC MICROSYSTEMS Aa a ^ "7\ /H -T > M S M 128 Megabit C M O S D D R S D R A M D PD D 16M X 8RLA Y5 D pd d 16m x s r s a y s High Density Memory Device A D V A N C E D IN F O R M A T IO N DESCRIPTION: T h e /ti-D e m ia series is a family of interchangeable memory devices.
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DPDD16M
64Mbit
30A223-00
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP
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DPDD32MX4RLAY5
The128Megabit
DPDD32MX4RLAY5/
DPDD32MX4RSAY5,
64Mbit
00MHz)
53A001-00
30A222-00
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