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    Delta Electronics Inc 1001053A001-000

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    53A00100 Datasheets Context Search

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    DPSD8MX32TY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP


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    DPSD8MX32TY5 IPC-A-610 53A001-00 80-Pin 30A225-12 DPSD8MX32TY5 PDF

    DPDD64MX8WSBNY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail CMOS DDR SDRAM DPDD64MX8WSBNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two


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    DPDD64MX8WSBNY5 256Mb 30A249-01 DPDD64MX8WSBNY5 PDF

    DPDD32MX8TSBY5

    Abstract: 4Mx8 30A242
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD32MX8TSBY5 The Memory Stack series is a family of interchangeable memory devices. The 256 Mb, CMOS DDR Synchronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb


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    DPDD32MX8TSBY5 128Mb 128Mb IPC-A-610, 30A242-00 DPDD32MX8TSBY5 4Mx8 30A242 PDF

    ipc 502

    Abstract: DPSD16MX16TKY5 A801
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8


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    DPSD16MX16TKY5 128Mb 128Mb DQ0-DQ15) 30A232-12 ipc 502 DPSD16MX16TKY5 A801 PDF

    DPDD192MX8XSBY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1


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    DPDD192MX8XSBY5 A10/AP 30A254-03 DPDD192MX8XSBY5 PDF

    DPSD128MX4WNY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


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    DPSD128MX4WNY5 256Mb 256Mb 30A215-01 DPSD128MX4WNY5 PDF

    TSOP 66 Package

    Abstract: DPDD128MX8XSBY5 TSOP 56 LAYOUT
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit CMOS DDR SDRAM DPDD128MX8XSBY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 1 Gigabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices


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    DPDD128MX8XSBY5 DPDD128MX8XSBY5, 53A001-00 30A254-01 TSOP 66 Package DPDD128MX8XSBY5 TSOP 56 LAYOUT PDF

    DPDD128MX4WSANY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail CMOS DDR SDRAM DPDD128MX4WSANY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two


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    DPDD128MX4WSANY5 256Mb 256Mb 30A235-01 DPDD128MX4WSANY5 PDF

    DPSD32MX16WY5

    Abstract: No abstract text available
    Text: 32Mx16, 7.5 - 15ns, P12, M-Densus 30A231-00 A M-Densus 512 Megabit Synchronous DRAM DPSD32MX16WY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of


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    32Mx16, 30A231-00 DPSD32MX16WY5 DPSD32MX16WY5 53A001-00 PDF

    DPSD16MX8RY5

    Abstract: No abstract text available
    Text: 16Mx8, 7.5 - 15ns, P12, M-Densus 30A181-22 G M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are


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    16Mx8, 30A181-22 DPSD16MX8RY5 DPSD16MX8RY5 53A001-00 PDF

    TSOP 54 PIN footprint

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are


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    DPDD32MX16WSCY5 Cycles/64ms 53A001-00 30A246-00 TSOP 54 PIN footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory moduels. The 256 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are


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    DPDD64MX4TSAY5 Cycles/64ms 53A001-00 30A234-00 PDF

    30A215-00

    Abstract: No abstract text available
    Text: 32Mx4, 10 - 12ns, M-Densus 30A181-02 E M-Densus 512 Megabit Synchronous DRAM DPSD128MX4WY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are


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    32Mx4, 30A181-02 DPSD128MX4WY5 64Meg DPSD128MX4WY5 53A001-00 30A215-00 30A215-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for


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    DPDD16MX16TSBY5 A10/AP 53A001-00 30A245-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 Gigabit Synchronous DRAM DPSD128MX8XKY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 1 Gigabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 64 Meg x 8 SDRAMs.


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    DPSD128MX8XKY5 DPSD128MX8XKY5 53A001-00 30A248-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128MX8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit Synchronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


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    DPSD128MX8XKY5 512Mb 512Mb 53A001-00. 30A248-00 PDF

    30A215-01

    Abstract: DP 6 W
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


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    DPSD128MX4WNY5 256Mb 512Mb 30A215-01 DP 6 W PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD256MX4XY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit Syncronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


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    DPSD256MX4XY5 512Mb 512Mb 53A001-00. 30A215-10 PDF

    TSOP 48 LAYOUT

    Abstract: dp 502 t LP SDRAM tsop 66
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 • Configuration Available: 16 Meg x 16 bit 2 Banks of 4 Meg x 8 bits x 4 • Clock Frequency: 100, 125, 133, 143 MHz • 2.5 Volt DQ Supply • JEDEC Standard SSTL_2 Interface for all Inputs/Outputs


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    DPDD16MX16TSBY5 Cycles/64ms 66-Pin 53A001-00 30A245-00 TSOP 48 LAYOUT dp 502 t LP SDRAM tsop 66 PDF

    DPSD8MX16RKY5

    Abstract: No abstract text available
    Text: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-10 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are


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    8Mx16, 30A220-10 DPSD8MX16RKY5 DPSD8MX16RKY5 53A001-00 PDF

    DPSD64MX16XY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD64MX16XY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gb SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb 32M x 16 SDRAMs.


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    DPSD64MX16XY5 512Mb 512Mb device34± 30A231-10 DPSD64MX16XY5 PDF

    2C2001

    Abstract: No abstract text available
    Text: 5 1 2 M e g a b it C M O S D D R S D R A M DPDDl 28MX4W SAY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed


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    28MX4W DPDD128MX4WSAY5, 2C2001 PDF

    3233H

    Abstract: No abstract text available
    Text: ADVANCED C O M PO N E T E C H N O L O G IE S 5 1 2 M e g a b i t C M O S DDF? S D R A M DPDD32MX1 6W3C Y 5 DESCRIPTION: Z The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed


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    DPDD32MX1 DPDD32MX16W 53A001-00 3233H PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 128 Megabit C M O S D D R SDRAM DPDD32MX4RLAY5 DPDD32MX4RSÍW5 ADVANCED INFORMATION DESCRIPTION: The LP-Stack series is a family of interchangeable memory devices. The128M egabit Double Data Rale Synchronous DRAM isam em ber ofth isfam ilyw h ich utilizesthenew and innovative space savingTSOP


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    DPDD32MX4RLAY5 The128Megabit DPDD32MX4RLAY5/ DPDD32MX4RSAY5, 64Mbit 00MHz) 53A001-00 30A222-00 PDF