80C32E
Abstract: 73E-08 80C52E 80C52 rom radiation 0.8um cmos 87E-08
Text: SCMOS1 SCMOS1 Technology 80C32E/80C52E Microcontrollers – Tolerance to Radiation Abstract The radiation tolerant version of the 8–bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions. 30Krad Si , 30MHz and latch–up
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80C32E/80C52E
30Krad
30MHz
80C32E.
80C32E
30MHz,
80C52E
73E-08
80C52
rom radiation
0.8um cmos
87E-08
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A016 SMD
Abstract: military mcm 1553 O28 Package ACT-RS128K32
Text: RAD Tolerant ACT–RS128K32 High Speed 4 Megabit SRAM Multichip Module Preliminary Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Tolerant to 30KRad Si CIRCUIT TECHNOLOGY ■ Latch-up Immunity to 112MeV/(mg/cm2)
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RS128K32
30KRad
112MeV/
MIL-PRF-38534
MIL-STD-883
ACT-RS128K32
SCD3659
A016 SMD
military mcm 1553
O28 Package
ACT-RS128K32
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512K32
Abstract: 9Q512K32 UT9Q512 UT9Q512K32
Text: Standard Products UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet January 15, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT9Q512K32
16Megabit
30krads
300krads
16Mbit)
68-lead
10krad
30krad
512K32
9Q512K32
UT9Q512
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT7Q512
100ns
30krads
300krads
32E-8
0E14n/cm2
32-lead
36-lear
36-lead
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width
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UT8Q512K32
16Megabit
32-bit
50krads
1E-10
68-lead
512K32
10krad
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT8Q512
50krads
100krads
36-lead
10krad)
30krad)
50krad
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state
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UT9Q512K32
16Megabit
50krads
1E-10
0E14n/cm2
68-lead
10krad
30krad
50krad
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Untitled
Abstract: No abstract text available
Text: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT7Q512
100ns
30Krad
100Krad
0E14n/cm2
32-lead
100ns
7Q512)
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows
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UT8Q512K32
16Megabit
32-bit
50krads
300krads
8E-11errors/bit-day,
0E14n/cm2
68-lead
10krad
50krad
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows
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UT8Q512K32
16Megabit
32-bit
50krads
1E-10
68-lead
512K32
10krad
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UT9Q512K32
Abstract: No abstract text available
Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a
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UT9Q512K32E
68-lead
UT9Q512K32
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state
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UT9Q512K32
16Megabit
50krads
1E-10
68-lead
512K32
-40oC
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT7Q512
100ns
30krad
300krad
32E-8
0E14n/cm2
0E11pped
36-lead
32-lead
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Data Sheet June, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width
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UT8Q1024K8
50krad
44-lead
-40oC
10krad
30krad
|
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UT9Q512K32E
Abstract: No abstract text available
Text: NOTE: This product has been replaced with UT9Q512K32E. Please use the UT9Q512K32E for NEW designs. See the April 2007 customer letter at www.aeroflex.com/QCOTS for the improvements and differences. Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet
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UT9Q512K32E.
UT9Q512K32E
UT9Q512K32
16Megabit
50krads
68-leC
512K32
68-lead
-40oC
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Untitled
Abstract: No abstract text available
Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs
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UT9Q512K32E
50krads
68-lead
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet August 27, 2001 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs
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UT8Q1024K8
1E-10
0E14n/cm
44-lead
10krad
30krad
50krad
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Untitled
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT8Q512
50krads
100krads
1E-10
0E14n/cm2
36-lead
10krad)
30krad)
50krad
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Untitled
Abstract: No abstract text available
Text: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs
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UT9Q512K32E
50krads
68-lead
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UT7Q512
Abstract: No abstract text available
Text: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet January 21, 2002 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state
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UT7Q512
100ns
30krad
300krad
32E-8
32-lead
36-lead
100ns
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rom radiation
Abstract: 80c32e 80C52 80C52E 80c52 basic 40Krad
Text: Evaluation Report Radiation Tolerance of the 80C32E/80C52E by Thierry CORBIERE Abstract The radiation tolerant version of the 8-bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions.
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80C32E/80C52E
80C32E/80C52E
30Krad
30Mhz
80C32E.
80C52E
rom radiation
80c32e
80C52
80c52 basic
40Krad
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8SDMQ64M40 2.5-Gigabit SDRAM MCM UT8SDMQ64M48 3.0-Gigabit SDRAM MCM Datasheet March 25, 2013 FEATURES Organized as 64M x 40 16Meg x 40 x 4 banks and 64M x 48 (16Meg x 48 x 4 banks) Single 3.3V power supply PC100-compliant
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UT8SDMQ64M40
UT8SDMQ64M48
16Meg
PC100-compliant
-40oC
105oC
192-cycle
3E-10
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Untitled
Abstract: No abstract text available
Text: Application Note 1939 Total Dose Testing of the ISL71091SEHxx Precision Voltage Reference Introduction and Executive Summary This report discusses the results of total dose testing of four variants of the ISL71091SEHxx voltage reference. These tests were conducted to provide an assessment of the total dose
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ISL71091SEHxx
100krad
300rad
AN1939
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SMD 6 PIN IC
Abstract: ir 035P
Text: — I l I I RAD Tolerant I I I I I- ACT-RS128K32 High Speed 4 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ Preliminary 4 Low Power CMOS 128K x 8 SRAMs in one MCM Overall configuration as 128K x 32 Tolerant to 30KRad Si Latch-up Immunity to 112MeV/(mg/cm2)
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ACT-RS128K32
30KRad
112MeV/
MIL-PRF-38534
SMD 6 PIN IC
ir 035P
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