DA60
Abstract: 30PDA60
Text: ｓ DIODE Type : 30PDA6 DA60 OUTLINE DRAWING 3A 600V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PDA60
Char100
DA60
30PDA60
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30PDA60
Abstract: No abstract text available
Text: ｓ DIODE Type : 30PDA60 OUTLINE DRAWING 3A 600V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PDA60
30PDA60
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Untitled
Abstract: No abstract text available
Text: 拡散型シリコンダイオード 3A 600V Tjw150℃ 外 形 図 30PDA60 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 用途 Application • 最大定格 Axial Lead Type Diffusion-type Silicon Rectifier Diode
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Tjw150
30PDA60
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Untitled
Abstract: No abstract text available
Text: 拡散型シリコンダイオード 3A 600V Tjw150℃ 30PDA60 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 用途 Application • 最大定格 Axial Lead Type Diffusion-type Silicon Rectifier Diode
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Tjw150
30PDA60
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Untitled
Abstract: No abstract text available
Text: 3A Avg. •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 600 IO 実 効 順 電 流 R.M.S. Forward Current サ ー ジ 順 電 流 Surge Forward Current
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30PDA60
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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30V 20A 10KHz power MOSFET
Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
Text: 目录 二极管是功率半导体的基础 1 二极管的构造标记、基本特性 １ 一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 （ 正 向电力损耗 ）加上（ 反 向电力损耗 ） — 使 用PN二极管时我们可以
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AC100/
0QY03
EP10HY03
EP10LA03
EP10QY03
OD-123
200270/W
EP10HA03
30V 20A 10KHz power MOSFET
IGBT 60A spice model
10EDB20
ICF-SW77
smd 1a 100v diode bridge
sbd diode S
2MV10
200v 3A schottky
31DF2
AC100
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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30PDA60
Abstract: No abstract text available
Text: 3A Avg. 600 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 600 平 均 整 流 電 流 Average Rectified Output Current
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Tl124
30PDA60
30PDA60
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10dda20
Abstract: TA29 TA-29 10EDB40 10EDA10 10edb20
Text: Standard Recovery Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（µA) 25°C Tjmax (°C) Case Outline Axial Lead Type 10EDA10 100 1 Ta=39℃ PCB Mounted 45 1 10 150 1 10EDA20 200 1 Ta=39℃ PCB Mounted 45 1 10 150 1 10EDA40 400 1
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10EDA10
10EDA20
10EDA40
10EDA60
10EDB10
10EDB20
10EDB40
10EDB60
10JDA10
10JDA20
10dda20
TA29
TA-29
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31DF2 diode
Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인
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2004/Sept.
AC100/
50/60Hz
DC12V
10kHz
OD-123
100/W
200/W
270/W
300/W
31DF2 diode
mosfet 600V 60A TO-220
MOSFET 50V 100A TO-220
200v 10A mosfet
Diode 31DQ04
200V 200A mosfet
ICF-SW77
IGBT 60A spice model
60v 10KHz ir MOSFET
LM317 spice
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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