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    30PDA60

    Abstract: No abstract text available
    Text: s DIODE Type : 30PDA60 OUTLINE DRAWING 3A 600V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PDA60 30PDA60

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    Abstract: No abstract text available
    Text: 拡散型シリコンダイオード 3A 600V Tjw150℃ 外 形 図 30PDA60 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 用途 Application • 最大定格 Axial Lead Type Diffusion-type Silicon Rectifier Diode


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    PDF Tjw150 30PDA60

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    Abstract: No abstract text available
    Text: 拡散型シリコンダイオード 3A 600V Tjw150℃ 30PDA60 外 形 図 拡散型シリコンダイオード,リード線型 構造 Construction Diffusion-type Silicon Rectifier Diode 一般整流用 用途 Application • 最大定格 Axial Lead Type Diffusion-type Silicon Rectifier Diode


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    PDF Tjw150 30PDA60

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    Abstract: No abstract text available
    Text: 3A Avg. •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 600 IO 実 効 順 電 流 R.M.S. Forward Current サ ー ジ 順 電 流 Surge Forward Current


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    PDF 30PDA60

    DA60

    Abstract: 30PDA60
    Text: s DIODE Type : 30PDA6 DA60 OUTLINE DRAWING 3A 600V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current


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    PDF 30PDA60 Char100 DA60 30PDA60

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045

    30V 20A 10KHz power MOSFET

    Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
    Text: 目录 二极管是功率半导体的基础 1 二极管的构造标记、基本特性 1 一般整流二极管和高速二极管 2 确认二极管的基本特性的实验—试着测量正向特性和反向特性 2 ( 正 向电力损耗 )加上( 反 向电力损耗 ) — 使 用PN二极管时我们可以


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    PDF AC100/ 0QY03 EP10HY03 EP10LA03 EP10QY03 OD-123 200270/W EP10HA03 30V 20A 10KHz power MOSFET IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    PT76S16

    Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
    Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    30PDA60

    Abstract: No abstract text available
    Text: 3A Avg. 600 Volts Standard Recovery Diode •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 600 平 均 整 流 電 流 Average Rectified Output Current


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    PDF Tl124 30PDA60 30PDA60

    10dda20

    Abstract: TA29 TA-29 10EDB40 10EDA10 10edb20
    Text: Standard Recovery Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM(µA) 25°C Tjmax (°C) Case Outline Axial Lead Type 10EDA10 100 1 Ta=39℃ PCB Mounted 45 1 10 150 1 10EDA20 200 1 Ta=39℃ PCB Mounted 45 1 10 150 1 10EDA40 400 1


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    PDF 10EDA10 10EDA20 10EDA40 10EDA60 10EDB10 10EDB20 10EDB40 10EDB60 10JDA10 10JDA20 10dda20 TA29 TA-29

    31DF2 diode

    Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
    Text: 트랜지스터 기술 2004년 8월호 제1장 원고 파워 다이오드의 기본 특성 및 선정 전류 다이오드는 파워 반도체의 기본 파워 전력용 반도체에 흘려보낼 수 있는 전류 는 일반적으로 1A 이상입니다. 가장 기본적인


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    PDF 2004/Sept. AC100/ 50/60Hz DC12V 10kHz OD-123 100/W 200/W 270/W 300/W 31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice

    508RP

    Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
    Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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    FCGS20A12

    Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
    Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


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