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    30A DIODE Search Results

    30A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    30A DIODE Price and Stock

    Diotec Semiconductor AG TGL34-30A

    TVS Diode - MiniMelf - 25.6V - 150W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL34-30A
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    • 1000 -
    • 10000 $0.0429
    Buy Now

    Diotec Semiconductor AG TGL41-30A

    TVS Diode - Melf - 25.6V - 400W - Unidirectional
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TGL41-30A
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0446
    Buy Now

    30A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is


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    PDF RURG3060

    30NF20

    Abstract: mosfet 30a 200v TO247 package dissipation 30NF20 st JESD97 STB30NF20 STP30NF20 STW30NF20
    Text: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A


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    PDF STP30NF20 STB30NF20 STW30NF20 O-220/TO-247/D2PAK STP30NF20 O-247 O-220 30NF20 mosfet 30a 200v TO247 package dissipation 30NF20 st JESD97 STB30NF20 STW30NF20

    30NF20

    Abstract: STP30NF20 JESD97 STB30NF20 STW30NF20
    Text: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A


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    PDF STP30NF20 STB30NF20 STW30NF20 O-220/TO-247/D2PAK STP30NF20 O-247 O-220 30NF20 JESD97 STB30NF20 STW30NF20

    Untitled

    Abstract: No abstract text available
    Text: STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W STB30NF20 200V 0.075Ω 30A


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    PDF STP30NF20 STB30NF20 STW30NF20 O-220/TO-247/D2PAK STP30NF20 O-247 O-220

    Untitled

    Abstract: No abstract text available
    Text: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


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    PDF RURG3060CC RURG3060

    Untitled

    Abstract: No abstract text available
    Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride


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    PDF RHRG3060

    Untitled

    Abstract: No abstract text available
    Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


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    PDF RURG3060

    Untitled

    Abstract: No abstract text available
    Text: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current


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    PDF ISL9R3060G2 102ns AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.


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    PDF ISL9R3060G2

    Untitled

    Abstract: No abstract text available
    Text: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■


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    PDF STP36NF06L STB36NF06L O-220 O-220

    P36NF06L

    Abstract: p36nf06 STP36NF06L STB36NF06L B36NF06 JESD97 13-Mar-2006
    Text: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■


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    PDF STP36NF06L STB36NF06L O-220 O-220 P36NF06L p36nf06 STP36NF06L STB36NF06L B36NF06 JESD97 13-Mar-2006

    30NF20

    Abstract: JESD97 STP30NF20 STW30NF20
    Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • ■ Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ) s ( ct


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    PDF STP30NF20 STW30NF20 O-220/TO-247 O-247 30NF20 JESD97 STP30NF20 STW30NF20

    30NF20

    Abstract: STP30NF20 STW30NF20 JESD97
    Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested


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    PDF STP30NF20 STW30NF20 O-220/TO-247 30NF20 STP30NF20 STW30NF20 JESD97

    200V AUTOMOTIVE MOSFET

    Abstract: 30NF20 JESD97 STP30NF20 STW30NF20
    Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■


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    PDF STP30NF20 STW30NF20 O-220/TO-247 O-247 O-220 200V AUTOMOTIVE MOSFET 30NF20 JESD97 STP30NF20 STW30NF20

    IGBT STGW30NC60W

    Abstract: W30NC60W STGW30NC60W schematic diagram UPS 600 STGP30NC60W W30NC60
    Text: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • Type VCES VCE sat (Max)@ 25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A ■ HIGH FREQUENCY OPERATION ■ VERY SOFT ULTRA FAST RECOVERY ANTI


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    PDF STGP30NC60W STGW30NC60W O-247 O-220 STGW30NC60W STGP30NC60W O-247 O-220 IGBT STGW30NC60W W30NC60W schematic diagram UPS 600 W30NC60

    Untitled

    Abstract: No abstract text available
    Text: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a


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    PDF SiS435DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GW30NC60W

    Abstract: No abstract text available
    Text: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction


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    PDF STGP30NC60W STGW30NC60W O-247 O-220 STGW30NC60W STGP30NC60W O-220 GW30NC60W

    Untitled

    Abstract: No abstract text available
    Text: 30A CELL SERIES 硅整流器 Silicon Rectifier •特征 Features Io ● VRRM ● ● ● ■外形尺寸和印记 30A 100V~1000V Outline Dimensions and Mark 30A CELL 电极表面高可焊性 Solderable electrode surface Silicone Rubber .087 2.2 .071(1.8)


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    PDF 200V400V600V800V1000V 22-Sep-11 21yangjie

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY b3E D 0557^ ÜDOllbfl 704 H A V P ADVANCED POW ER TECHNOLOGY' APT2X31D60J APT2X31D50J APT2X31D40J 600V 500V 400V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES


    OCR Scan
    PDF APT2X31D60J APT2X31D50J APT2X31D40J OT-227 OT-227

    apt2x30d100j

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y " APT2X30D100J APT2X30D90J APT2X30D80J 1000V 900V 800V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode •Switchmode Power Supply


    OCR Scan
    PDF APT2X30D100J APT2X30D90J APT2X30D80J OT-227 OT-227

    APT2X31D80J

    Abstract: No abstract text available
    Text: K2 A2 A d v a n ced P o w er Te c h n o l o g y * K1 APT2X31D100J APT2X31D90J APT2X31D80J A1 1000V 30A 900V 30A 800V 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode


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    PDF APT2X31D100J APT2X31D90J APT2X31D80J OT-227 OT-227

    EE-25 transformer

    Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
    Text: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS


    OCR Scan
    PDF APT30D100B APT30D90B APT30D80B O-247 O-247AD EE-25 transformer Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer CR diode transient

    eakt

    Abstract: No abstract text available
    Text: ADVANCED POlilER TECHNOLOGY L3E J> 05S7TDT A 0D011b4 ObT H A V P d v a n c e d P ow er T e c h n o lo g y K 2 0 —! APT2X30D60J APT2X30D50J APT2X30D40J Ai O —! 600V 30A 500V 30A 400V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES


    OCR Scan
    PDF 05S7TDT 0D011b4 APT2X30D60J APT2X30D50J APT2X30D40J OT-227 eakt

    Untitled

    Abstract: No abstract text available
    Text: A D V A NC E D POÜIER TECHNOLOGY b3E □5 5 7 ^ D DGDllSb T<i 2 H A V P A d vanced P o w er Te c h n o l o g y APT2X31D100J APT2X31D90J APT2X31D80J 1000V 900V 800V 30A 30A 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS


    OCR Scan
    PDF APT2X31D100J APT2X31D90J APT2X31D80J OT-227 OT-227