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    30CTQ050S Price and Stock

    SMC Diode Solutions 30CTQ050S

    DIODE ARR SCHOTT 50V 15A D2PAK
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    SMC Diode Solutions 30CTQ050STR

    Diode: Schottky rectifying; SMD; 50V; 30A; D2PAK; reel,tape
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 30CTQ050STR 1
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    30CTQ050S Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    30CTQ050S International Rectifier 50V 30A Schottky Common Cathode Diode in a D2-Pak package Original PDF
    30CTQ050S International Rectifier Schottky Rectifier Original PDF
    30CTQ050S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    30CTQ050STR SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 50V 15A D2PAK Original PDF
    30CTQ050STRL International Rectifier 50V 30A Schottky Common Cathode Diode in a D2-Pak package Original PDF
    30CTQ050STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    30CTQ050STRR International Rectifier 50V 30A Schottky Common Cathode Diode in a D2-Pak package Original PDF
    30CTQ050STRR International Rectifier Schottky Rectifier Original PDF
    30CTQ050STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    30CTQ050S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30CTQ

    Abstract: 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460
    Text: 30CTQ.SPbF, 30CTQ.-1PbF Vishay High Power Products Schottky Rectifier, 2 x 15 A FEATURES 30CTQ.-1PbF 30CTQ.SPbF • • • • • Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK


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    PDF 30CTQ. O-262 18-Jul-08 30CTQ 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460

    30CTQ

    Abstract: 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460
    Text: 30CTQ.SPbF/30CTQ.-1PbF Vishay High Power Products Schottky Rectifier, 2 x 15 A FEATURES 30CTQ.-1PbF 30CTQ.SPbF • 150 °C TJ operation Available • Center tap configuration RoHS* • Very low forward voltage drop COMPLIANT • High frequency operation


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    PDF 30CTQ. SPbF/30CTQ. O-262 18-Jul-08 30CTQ 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460

    30CTQ060S

    Abstract: 30CTQ 30CTQ050-1 30CTQ050S 30CTQ060-1 40HFL40S02 IRFP460
    Text: 30CTQ.S/30CTQ.-1 Vishay High Power Products Schottky Rectifier, 2 x 15 A FEATURES 30CTQ.-1 30CTQ.S • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation Base common cathode 2 Base common


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    PDF 30CTQ. S/30CTQ. O-262 18-Jul-08 30CTQ060S 30CTQ 30CTQ050-1 30CTQ050S 30CTQ060-1 40HFL40S02 IRFP460

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    203CNQ100

    Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
    Text: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060


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    PDF 10BQ100 10BQ015 10BQ040 10BQ060 30BQ100 30BQ015 30BQ040 30BQ060 10TQ035S 10TQ045S 203CNQ100 122NQ030R MBR1535 21FQ040 121NQ035 189NQ

    30CTQ

    Abstract: 30CTQ050 30CTQ050-1 30CTQ050S 30CTQ060 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460 SMD-220
    Text: PD-2.300 rev. B 04/99 30CTQ. 30CTQ.S 30CTQ.-1 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features Characteristics Values Units IF AV Rectangular 30 A 50 / 60 V waveform VRRM This center tap Schottky rrectifier has been optimized for very


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    PDF 30CTQ. 30CTQ 30CTQ050 30CTQ050-1 30CTQ050S 30CTQ060 30CTQ060-1 30CTQ060S 40HFL40S02 IRFP460 SMD-220

    Untitled

    Abstract: No abstract text available
    Text: 30CTQ50/60 30CTQ50/60S 30CTQ50/60-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0683, Rev. - Green Products 30CTQ50/60/30CTQ50/60S /30CTQ50/60-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes


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    PDF 30CTQ50/60 30CTQ50/60S 30CTQ50/60-1 N0683, 30CTQ50/60/30CTQ50/60S /30CTQ50/60-1

    smb 440a

    Abstract: 81CNQ050 100V 25A schottky 168CMQ060 60L30CT 201CNQ050 TO244AB 60hq100 diode 35v 10a 241NQ045
    Text: Surface Mount Schottky Navigator Current Voltage illustrations not to scale 15V 15V 15V 15V 15V 15V 1A 3A 19A 40A 60A 80A 20V 20V 20V 20V 20V 20V 20V 20V 20V 1A 2A 5A 6A 12A 3A 40A 60A 80A 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V 1A 2A 3A 5A 6A 12A 30A 40A


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    PDF OT-223 D61-6SL D61-8SL 10BQ015 30BQ015 19TQ015S 40L15CTS 85CNQ015SL 47CTQ020S 87CNQ020SL smb 440a 81CNQ050 100V 25A schottky 168CMQ060 60L30CT 201CNQ050 TO244AB 60hq100 diode 35v 10a 241NQ045

    430CTQ06

    Abstract: No abstract text available
    Text: Bulletin PD-21018 rev. A 07/06 30CTQ.SPbF 30CTQ.-1PbF 30 Amp SCHOTTKY RECTIFIER IF AV = 30Amp VR = 50 - 60V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 30 A 50 - 60 V IFSM @ tp = 5 s sine 1000


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    PDF PD-21018 30CTQ. 30Amp 12-Mar-07 430CTQ06

    30CTQ060S

    Abstract: 30CTQ 40HF P460 SMD-220
    Text: Bulletin PD-21018 rev. A 07/06 30CTQ.SPbF 30CTQ.-1PbF 30 Amp SCHOTTKY RECTIFIER IF AV = 30Amp VR = 50 - 60V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 30 A 50 - 60 V IFSM @ tp = 5 s sine 1000


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    PDF PD-21018 30CTQ. 30Amp O-262 30CTQ060S 30CTQ 40HF P460 SMD-220

    209CmQ150

    Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
    Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78


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    PDF 10BQ100 10BQ015 10BQ040 10BQ060 30BQ100 30BQ015 30BQ040 30BQ060 209CmQ150 K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


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    PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    mbrf1060ctl

    Abstract: No abstract text available
    Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1


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    PDF OD-123 BAT54W OT-323 BAT54WS BAT54A OT-23 BAT54C BAT54S mbrf1060ctl

    Untitled

    Abstract: No abstract text available
    Text: international Schottky Diode lioRRecdfier Center Tap - Surface Mount 6.6-30 Amps 6 Part Num ber >F(AV) @ TC (A) (°C) V FM @ (FM (D (V ) VR R M (V) (2 ) (3 ) eAS (m J ) •a r 30 40 50 60 90 100 6.6 6.6 6.6 6.6 6.6 6.6 97 97 92 92 94 94 0.63 0.63 0.67 0.67


    OCR Scan
    PDF 6CWQ03F 6CWQ04F 6CWQ05F 6CWQ06F 6CWQ09F 6CWQ10F 10CTQ150S 12CTQ035S 12CTQ045S 15CTQ035S

    I2CTQ045S

    Abstract: RBI54 i6ctq BRB2080CT
    Text: Schottky Diodes Internationa! IOR Rectifier Part Number VRMM V •rm @ vrwm ^FM @ I fM MaxTj eAS *ar 2S°C 25°C (mA) (mA) (°C) (mi) (A) •fav@ tc W (C) Fax on Demand Number Notes Surface-Mount Packages Outline Key Center Tap D2Pak M BRB2080CT SO I0 133


    OCR Scan
    PDF BRB2080CT BRB2090CT MBRB20100CT I2CTQ035S I2CTQ045S MBRB1535CT I5CTQ035S 15CTO045S 16CTQ080S 20CTQ035S RBI54 i6ctq

    smd diode f54

    Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
    Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040


    OCR Scan
    PDF 10MQ040 10MQ060 10MQ090 15MQ040 10BQ015 10BQ040 10BQ060 10BQ100 30BQ015 30BQ040 smd diode f54 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150

    d2p smd code

    Abstract: No abstract text available
    Text: PD-2.300 rev. B 04/99 3 0 C T Q . . 3 0 C T Q . .S 30CTQ.-1 International Rectifier I R 30 Amp SCHOTTKY RECTIFIER M ajor Ratings and Characteristics Description/Features Characteristics Values Units l F Av Rectan9 ular waveform 30 A 5 0 /6 0 V V RRM


    OCR Scan
    PDF 30CTQ. d2p smd code

    20332

    Abstract: 15CTQ035
    Text: I n t e r n a t io n a l R e c t if ie r 1 Schottky Diodes Pm Number •F AV «TC jnrpacfcaç Vrrm (Vollt) PI « v f m o if m eas (Vote) ml fafcdVm m i >AR (Ampt) mA (3) P)*RM« Mu l Tj •c Notof Fu-onDamand Numlm Cut Styl«, (Cau OullrM) (1) Surfac* Mount


    OCR Scan
    PDF 20CJQ030 20CJQ045 20CJQ060 20CJQ100 10CTQ150S 12CTQ035S 12CTQ045S 15CTQ035S 15CTQ045S MBRB1535CT 20332 15CTQ035