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    Rochester Electronics LLC CY7C451-30LMB

    IC FIFO ASYNC 512X9 20NS 32CLCC
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    DigiKey CY7C451-30LMB Bulk 7
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    Rochester Electronics LLC PALC16R6-30LMB

    OT PLD, 30NS, PAL-TYPE
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    DigiKey PALC16R6-30LMB Bulk 20
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    Teledyne e2v CY7C425-30LMB

    FIFO MEMORY, 1K X 9 PARALLEL, 30 NS ACCE - Rail/Tube (Alt: CY7C425-30LMB)
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    Avnet Americas CY7C425-30LMB Tube 250
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    Teledyne e2v CY7C462A-30LMB

    FIFO MEMORY, 16K X 9 PARALLEL, 30 NS ACC - Rail/Tube (Alt: CY7C462A-30LMB)
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    Avnet Americas CY7C462A-30LMB Tube 250
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    Teledyne e2v CY7C429-30LMB

    FIFO MEMORY, 2K X 9, 30 NS ACCESS TIME - Rail/Tube (Alt: CY7C429-30LMB)
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    Avnet Americas CY7C429-30LMB Tube 250
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    Find more 30LMB price and stock on Findchips.com

    30LMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20G10-25

    Abstract: 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108
    Text: PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Fully AC and DC tested


    Original     		PDF PLDC20G10B/PLDC20G10 24-Pin 20G10-25 20G10-30 20G10B-20 20G10B-25 12L10 16L6 18L4 20L10 20L8 20G108

    transistor c331

    Abstract: c331 transistor C3318 C3317 C331 C3311 C331 datasheet CY7C331 20HC c331 equivalent
    Text: CY7C331 Asynchronous Registered EPLD Features • Low power — 90 mA typical ICC quiescent • Twelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — 180 mA ICC maximum — UV-erasable and reprogrammable — One feedback flip-flop with input coming from the


    Original     		PDF CY7C331 CY7C331 transistor c331 c331 transistor C3318 C3317 C331 C3311 C331 datasheet 20HC c331 equivalent

    12L10

    Abstract: 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000
    Text: PLDC20G10B PLDC20G10 USE ULTRA37000 FOR ALL NEW DESIGNS CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns — Military: tPD = 20 ns, tCO = 15 ns, tS = 15 ns


    Original     		PDF PLDC20G10B PLDC20G10 ULTRA37000TM 24-Pin 20L10, 12L10, PLDC20G10B/PLDC20G10 12L10 16L6 20L10 20L8 PLDC20G10 PLDC20G10B ULTRA37000

    CY7C419

    Abstract: CY7C420 CY7C421 CY7C425 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 7C43
    Text: fax id: 5404 /25/29/ CY7C419/21/25/29/33 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features • 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of


    Original     		PDF CY7C419/21/25/29/33 300-mil IDT7200, IDT7201, IDT7202, IDT7203, IDT7204 CY7C419 CY7C420 CY7C421 CY7C425 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 7C43

    20G10

    Abstract: 20G10B-20 12L10 16L6 18L4 20L10 20L8
    Text: fax id: 6014 1P LDC20 G1 0B/P LD C20 G1 0 PLDC20G10B/PLDC20G10 CMOS Generic 24-Pin Reprogrammable Logic Device Features • CMOS EPROM technology for reprogrammability • Highly reliable — Uses proven EPROM technology • Fast — Commercial: tPD = 15 ns, tCO = 10 ns, tS = 12 ns


    Original     		PDF LDC20 PLDC20G10B/PLDC20G10 24-Pin 20G10 20G10B-20 12L10 16L6 18L4 20L10 20L8

    247Q

    Abstract: PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8 PALC20
    Text: PAL C20 Series CYPRESS Features • • CMOS EPROM technology for repro­ grammability • High performance at quarter power Reprogrammable CMOS PALC 16L8,16R8, 16R6, 16R4 High reliability — Proven EPROM technology — > 1500V input protection from electrostatic discharge


    OCR Scan     		PDF PALC20 PALC16R8-35WC/WC 20-Lead 300-Mil) PALC16R8â 40DMB PALC16R8-40LMB 20-Pin 247Q PALC16R6-25WC carrier 40QMB CERAMIC LEADLESS CHIP CARRIER PALC16R4-35WC 16L8 16R4 16R6 16R8

    CY7C225A

    Abstract: No abstract text available
    Text: CY7C225A '= C Y P R E S S Features • CMOS for optimum speed/power • High speed — 18 ns address set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous out­ put enables • On-chip edge-triggered registers


    OCR Scan     		PDF CY7C225A 300-mil, 24-pin 28-pin CY7C225A CY7C225A-40PC 24-Lead 300-Mil) CY7C225Aâ

    L496D

    Abstract: 9l reset CY7C331 ST L11922 0423-J
    Text: CY7C331 -W C Y P R E S S Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,


    OCR Scan     		PDF CY7C331 28-pin CY7C331 -40TMB 28-Lead CY7C331â 40WMB 28-Lead 300-Mil) L496D 9l reset ST L11922 0423-J

    16L88

    Abstract: PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB
    Text: 256=^2 ooQb^o s d c y p MbE D CYPRESS SEMICONDUCTOR PAL C20 Series ~ SEMICONDUCTOR Features • CMOS EPROM technology for « p ro ­ grammability • High performance at quarter power • — tpo = 25 ns — ts = 20 ns — tco = 15 ns — Ice = 45 mA • High performance at military


    OCR Scan     		PDF PALC16R8L-35VC PALC16R8L-35WC PALC16R8â PALC16R8-35PC/PI PALC16R8-35VC/VC PALC16R8-35WCAVC PALC16R8-40DMB PALC16R8-40KMB PALC16R8-40LMB PALC16R8-40QMB 16L88 PALC20 PALC16R6-20DMB cypress 16R4 PALC16L8-30DMB 16L8 16R4 16R6 16R8 PALC16R6-30DMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C451 CY7C453 m r cypress Functional Description Features • 512 x 9 CY7C451 and 2,048 x 9 (CY7C453) FIFO buffer memory • Expandable in width and depth • High-speed 70-MHz standalone; 50-MHz cascaded • Supports free-running 50% duly cycle clock inputs


    OCR Scan     		PDF CY7C451 CY7C453 CY7C451) CY7C453) 70-MHz 50-MHz 300-mil 32-pin DD15475

    Untitled

    Abstract: No abstract text available
    Text: Asynchronous Registered EPLD 13 inputs, 12 feedback VO pins, plus 6 shared I/O macrocell feedbacks for a total of 31 true and complementary inpnts High speed: 20 ns maximum tpo Security bit Space-saving 28-pin slim-line DIP package; also available in 28-pin


    OCR Scan     		PDF 28-pin 28-pin termW22 28-Lead 300-Mil) CY7C331 001305b

    7c331-35

    Abstract: No abstract text available
    Text: s :^é= , CY7C331 •jS QYPRESS -■ W SEMICONDUCTOR Asynchronous Registered EPLD Features • TVelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,


    OCR Scan     		PDF CY7C331 Space-savi22 7c331-35

    AC-231

    Abstract: No abstract text available
    Text: CY7B201 PRELIMINARY s CYPRESS . r SEMICONDUCTOR Reprogrammable 128K x 8 Power-Down PROM Features Functional Description • BiFAMOS for optimum speed/ power The CY7B201 is a high-performance 1-megabit BiFAMOS PROM organized in 128 Kbytes. It is available in 32-pin,


    OCR Scan     		PDF CY7B201 32-pin, 600-mil 32-pin CY7B201 CY7B201â AC-231

    Untitled

    Abstract: No abstract text available
    Text: CY7B210 PRELIMINARY CYPRESS SEMICONDUCTOR Features Product Characteristics • BiFAMOS for optimum speed/ power • Highspeed — *a a = 25 ns max. commercial The CY7B210 is a high-performance 1-megabit BiFAMOS PROM organized in 64K words by 16 bits wide. It is available in


    OCR Scan     		PDF CY7B210 40-pin, 600-mil CY7B210 44-pin CY7B210â

    CY7C429-25PC

    Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7
    Text: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs


    OCR Scan     		PDF CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 300-miI 300-mil CY7C421, CY7C429-25PC CY7C420 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7

    Untitled

    Abstract: No abstract text available
    Text: PERFORMANCE SEMICONDUCTOR EOE D • 70L25T7 0D0QS71 S P4C164/P4C164L ULTRA HIGH SPEED 8K x 8 STATIC CM O S RAM S SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -15/17/20/25/30/35 ns (Commercial)


    OCR Scan     		PDF 70L25T7 0D0QS71 P4C164/P4C164L Active-15 P4C164L 28-Pin -15PC -15JC -15CC -15LC

    1549T

    Abstract: EI96
    Text: PERFORMANCE SE MI CO NDU CTOR EOE D • TObEST? O O O D m T P4C1282/P4C1282L, P4C1281 /P4C1281L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 2 PIFSEUMO A -


    OCR Scan     		PDF P4C1282/P4C1282L, P4C1281 /P4C1281L P4C1281/82 P4C1281L/82L P4C1281/L P4C1282/L -20PC -20JC -20CC 1549T EI96

    ERF 2030

    Abstract: ERF 2030 mos fet c455 CY7C455 CY7C456 CY7C457 CY7C447 c4556 C4557
    Text: / u h *f o . iviu i l u a y , w w i u u t i r p , 1 Revision: Tuesday, December 14,1993 C Y 7C 455 C Y 7C 456 C Y 7C 457 = = ^ C Y PR K SS p r e l im in a r y 512x18, lK x 18, and 2 K x l8 Cascadable Clocked FIFOs with Programmable Flags Features Functional Description


    OCR Scan     		PDF CY7C455 CY7C456 CY7C457 CY7C455) CY7C456) CY7C457) 70-MHz 50-MHz 13H2T ERF 2030 ERF 2030 mos fet c455 CY7C457 CY7C447 c4556 C4557

    C2021 m

    Abstract: C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB
    Text: K :Æ^ = PAL C20 Series r fÆ CYPRESS :.-. = Sr SEMICONDUCTOR Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 Features • CMOS EPROM technology for repro­ grammability • Higb performance at quarter power


    OCR Scan     		PDF 20-pin PALC16R8-30KMB PALC16R8-30LMB PALC16R8-30QMB PALC16R8-- 30WMB PALC16R8L-35LC PALC16R8L-35PC PALC16R8L-35VC PALC16R8L-35WC C2021 m C2021 palc16r8 PALC16R 16R4 programming specification ic w6 sem 2015 ic equivalent PALC20 PALC16R6-30WMB

    P4C1258

    Abstract: O513
    Text: PERFORMANCE SEMICONDUCTOR 7Ob2517 OOOOfc.41 fl • SOE D P4C1258/P4C1258L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS jA FEATURES ■ High Speed (Equal A ccess and C ycle Tim es) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary) ■ Three-State Outputs


    OCR Scan     		PDF P4C1258/P4C1258L P4C1258 P4C1258L P4C1258 P4C1258L 144-bit 64Kx4. TTL-compati1258/L -25PC -30PC O513

    B 503 Potentiometers

    Abstract: cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204
    Text: CY7C419/21/25/29/33 r* CYPRESS Features • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent o f depth/width • Low operating power — I c c i = 35 mA


    OCR Scan     		PDF CY7C419/21/25/29/33 300-mil IDT7200, IDT7201, IDT7202, IDT7203, IDT7204 256x9 512x9, B 503 Potentiometers cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204

    IC ccu 2030

    Abstract: No abstract text available
    Text: CY7C441 CY7C443 PRELIM INARY CYPRESS .-F ' SEMICONDUCTOR Functional D escription 512 x 9 CY7C441 a n d 2,04« x 9 (CY7C443) F IF O b u ffer memory H igh-speed 70-M Hz o p eratio n S u p p o rts free-ru n n in g 50% duty cycle clock inputs Empty, A lm ost Em pty, a n d A lm ost


    OCR Scan     		PDF CY7C441 CY7C443 CY7C441) CY7C443) 28-pln application--30LMB CY7C443 30KMB IC ccu 2030

    C3317

    Abstract: L1190 CY7331
    Text: Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coming from the I/O pin — Independent product term set, reset, and clock inputs on all


    OCR Scan     		PDF 28-pin 28-Lead 28-Lead 300-Mil) CY7C331 0Dlb56b C3317 L1190 CY7331

    CY7C425-15JI

    Abstract: 7C419
    Text: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width


    OCR Scan     		PDF 300-mil IDT7200, IDT7291, IDT7202, IDT7203, IDT7204 CY7C419, CY7C420/1, CY7C424/5, CY7C425-15JI 7C419