IRHYS593Z30CM
Abstract: IRHYS597Z30CM 20A400
Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*
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PD-96899
O-257AA)
IRHYS597Z30CM
IRHYS597Z30CM
IRHYS593Z30CM
O-257AA
5M-1994.
O-257AA
O-257AA.
20A400
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Untitled
Abstract: No abstract text available
Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*
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PD-96899
O-257AA)
IRHYS597Z30CM
IRHYS597Z30CM
IRHYS593Z30CM
O-257AA
5M-1994.
O-257AA
O-257AA.
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Untitled
Abstract: No abstract text available
Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D Simple Drive Requirement Fast Switching G -30V RDS ON 50m ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP9435GH/J
O-252
O-252/TO-251
O-251
100us
100ms
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AP9435GH
Abstract: No abstract text available
Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP9435GH/J
O-252
O-252/TO-251
O-251
100us
100ms
AP9435GH
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9435GH
Abstract: AP9435GH 9435G 9435GJ AP9435 9435 TO252 rthjc 250B1 AP9435G marking code E2 and gate
Text: AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching G BVDSS -30V RDS ON 50mΩ ID - 20A S Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP9435GH/J
O-252
O-252/TO-251
O-251
O-251
9435GJ
9435GH
AP9435GH
9435G
9435GJ
AP9435
9435
TO252 rthjc
250B1
AP9435G
marking code E2 and gate
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GI9435
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GI9435 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 50m -20A Description The GI9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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GI9435
GI9435
O-251
O-251
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GJ9435
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/02/23 REVISED DATE : GJ9435 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 50m -20A Description The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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GJ9435
GJ9435
O-252
O-252
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AP20N03P
Abstract: No abstract text available
Text: AP20N03S/P Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 30V ▼ Repetitive Avalanche Rated RDS ON 52mΩ ▼ Fast Switching ID D G ▼ Simple Drive Requirement 20A S Description The Advanced Power MOSFETs from APEC provide the
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AP20N03S/P
O-263
AP20N03P)
100us
100ms
AP20N03P
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Untitled
Abstract: No abstract text available
Text: PD - 95819 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB597Z30CM 100K Rads (Si) 0.048Ω IRHYB593Z30CM 300K Rads (Si) 0.048Ω ID -20A*
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O-257AA)
IRHYB597Z30CM
IRHYB597Z30CM
IRHYB593Z30CM
5M-1994.
O-257AA
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-95819A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB597Z30CM 100K Rads (Si) 0.072Ω IRHYB593Z30CM 300K Rads (Si) 0.072Ω ID -20A*
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PD-95819A
O-257AA)
IRHYB597Z30CM
IRHYB593Z30CM
O-257AA
5M-1994.
O-257AA.
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IRHYB593Z30CM
Abstract: IRHYB597Z30CM
Text: PD - 95819 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB597Z30CM 100K Rads (Si) 0.048Ω IRHYB593Z30CM 300K Rads (Si) 0.048Ω ID -20A*
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O-257AA)
IRHYB597Z30CM
IRHYB597Z30CM
IRHYB593Z30CM
5M-1994.
O-257AA
O-257AA.
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20n03
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V ssm20n03p
Text: SSM20N03S,P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating D Repetitive-avalanche rated 30V R DS ON 52mΩ ID Fast switching G Simple drive requirement BVDSS 20A S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,
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SSM20N03S
O-263
O-263
SSM20N03P)
O-220
20n03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
ssm20n03p
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4435GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics Low On-Resistance G RoHS-compliant, halogen-free BV DSS -30V RDS ON 20mΩ ID -20A S Description G Advanced Power MOSFETs from APEC provide the designer with the best
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AP4435GH/J-HF-3
O-252
AP4435GH-HF-3
O-252
O-251
AP4435GJ-HF-3)
O-251
AP9435
9435GJ
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9435GH
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9435GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics Low Gate Charge G RoHS-compliant, halogen-free -30V R DS ON 50mΩ ID -20A S Description G Advanced Power MOSFETs from APEC provide the designer with the best
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AP9435GH/J-HF-3
O-252
AP9435GH-HF-3
O-252
O-251
AP9435GJ-HF-3)
O-251
AP9435
9435GJ
9435GH
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ssm9435
Abstract: mosfet p-channel 10A ssm9435GH ssm9435G
Text: SSM9435GH,J P-channel Enhancement-mode Power MOSFET Low gate-charge D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BV DSS -30V R DS ON 50mΩ ID -20A S DESCRIPTION G D S The SSM9435H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited
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SSM9435GH
SSM9435H
O-252
SSM9435J
O-251,
O-252
O-251
ssm9435
mosfet p-channel 10A
ssm9435G
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AON6926
Abstract: 50a 30v 8.5m MOSFET
Text: AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6926 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1
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AON6926
AON6926
50a 30v 8.5m MOSFET
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Untitled
Abstract: No abstract text available
Text: AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6926 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1
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AON6926
AON6926
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AON6784
Abstract: No abstract text available
Text: AON6784 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6784 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6784
AON6784
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AON6790
Abstract: No abstract text available
Text: AON6790 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6790 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6790
AON6790
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aon6780
Abstract: 30V85A
Text: AON6780 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6780
AON6780
30V85A
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Untitled
Abstract: No abstract text available
Text: AON6780 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6780
AON6780
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Untitled
Abstract: No abstract text available
Text: AON6780 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching
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AON6780
AON6780
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TA49235
Abstract: 20n03
Text: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V
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RFD20N03,
RFD20N03SM
TA49235.
TA49235
20n03
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Untitled
Abstract: No abstract text available
Text: in te ftil HUF76423D3, HUF76423D3S D a ta S h e e t O c to b e r 1999 F ile N u m b e r 4 7 0 7 .2 Ultra^f 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance ' DRAIN
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HUF76423D3,
HUF76423D3S
O-251AA
O-252AA
HUF76423D3
HUF76423D3S
O-252AA
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