RF1S42N03
Abstract: F1S42N
Text: RFP42N03, RF1S42N03, RF1S42N03SM S E M I C O N D U C T O R 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A, 30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET
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RFP42N03,
RF1S42N03,
RF1S42N03SM
RF1S42N03
RF1S42N03SM
TA49235.
1-800-4-HARRIS
F1S42N
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mosfet 4430
Abstract: 4433 mosfet rfd20n03sm9a RFD20N03 RFD20N03SM TB334 AN9321 AN9322
Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
mosfet 4430
4433 mosfet
rfd20n03sm9a
TB334
AN9321
AN9322
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D203S
Abstract: No abstract text available
Text: RFD20N03, RFD20N03SM Data Sheet Title FD2 03, D20 3S bt A, V, 25 m, anwer OSTs utho July 1999 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs Features The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of
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RFD20N03,
RFD20N03SM
175oC
TB334
RFD20N03
RFD20N03SM
D203S
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AN9321
Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
Text: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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PDF
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
AN9321
AN9322
RFD20N03SM9A
TB334
54E-1
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TA49235
Abstract: 99E-1 rfd20n diode 736
Text: RFD20N03, RFD20N03SM S E M I C O N D U C T O R 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET November 1997 Features Description • 20A, 30V The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI
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Original
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PDF
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
1-800-4-HARRIS
TA49235
99E-1
rfd20n
diode 736
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TA49235
Abstract: 20n03
Text: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V
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OCR Scan
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PDF
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RFD20N03,
RFD20N03SM
TA49235.
TA49235
20n03
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Untitled
Abstract: No abstract text available
Text: RFD20N03, RFD20N03SM Semiconductor Data Sheet 20A, 30 V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,
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OCR Scan
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PDF
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
025i2
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Untitled
Abstract: No abstract text available
Text: RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A,30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching
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OCR Scan
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PDF
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RFP42N03,
RF1S42N03,
RF1S42N03SM
RF1S42N03
RF1S42N03SM
TA49235.
0-025i2
O-263AB
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RFP42N03
Abstract: F1S42N
Text: HARRIS S E M I C O N D U C T O R RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A, 30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET
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OCR Scan
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PDF
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RFP42N03,
RF1S42N03,
RF1S42N03SM
RF1S42N03
RF1S42N03SM
TA49235.
0-025i2
1-800-4-HARRIS
RFP42N03
F1S42N
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