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    30V 2A POWER P MOSFET Search Results

    30V 2A POWER P MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2754GR-E1-A Renesas Electronics Corporation Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2706GR(0)-E1-A Renesas Electronics Corporation Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2706GR-E1-AT Renesas Electronics Corporation Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2752GR-E1-AT Renesas Electronics Corporation Nch Dual Power Mosfet 30V 8.0A 23Mohm Power Sop8 Visit Renesas Electronics Corporation
    UPA2706GR-E2-AT Renesas Electronics Corporation Nch Single Power Mosfet 30V 11A 15Mohm Power Sop8 Visit Renesas Electronics Corporation

    30V 2A POWER P MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet p-channel 2A

    Abstract: 24V 1A mosfet
    Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V


    Original     		PDF LT2347 LT2347 -30V/-2 -30V/-2A, -30V/-1A, mosfet p-channel 2A 24V 1A mosfet

    Untitled

    Abstract: No abstract text available
    Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V


    Original     		PDF LT2347 LT2347 -30V/-2 -30V/-2A, -30V/-1A, 300us, OT-23

    Untitled

    Abstract: No abstract text available
    Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V


    Original     		PDF LT2347 LT2347 -30V/-2 -30V/-2A, -30V/-1A, OT-23

    Untitled

    Abstract: No abstract text available
    Text: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low Gate Drive Surface Mount Package BVDSS ID G2 G1 185m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2625GY OT-26 OT-26 12REF 37REF 90REF 20REF 95REF

    AP2623Y

    Abstract: No abstract text available
    Text: AP2623Y Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2623Y OT-26 OT-26 180/W AP2623Y

    Untitled

    Abstract: No abstract text available
    Text: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D2 D1 -30V RDS ON Low On-resistance Surface Mount Package BVDSS ID G2 G1 170m - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2623GY OT-26 OT-26

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2


    Original     		PDF AP2625GY-HF-3 OT-26 OT-26 12REF 37REF 90REF 20REF 95REF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2623GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Low Gate Charge D2 D1 Low On-resistance BV DSS -30V R DS ON 170mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description


    Original     		PDF AP2623GY-HF-3 OT-26 OT-26 12REF 37REF 90REF 20REF 95REF

    AP2625GY

    Abstract: G2 SOT
    Text: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low Gate Drive ▼ Surface Mount Package -30V RDS ON 185mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2625GY OT-26 OT-26 12REF 37REF 90REF 20REF 95REF AP2625GY G2 SOT

    AP2625GY

    Abstract: No abstract text available
    Text: AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low Gate Drive ▼ Surface Mount Package -30V RDS ON 185mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2625GY OT-26 OT-26 100ms 180/W AP2625GY

    AP2623GY

    Abstract: No abstract text available
    Text: AP2623GY Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 S1 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2623GY OT-26 OT-26 180/W AP2623GY

    Untitled

    Abstract: No abstract text available
    Text: AP2623GY RoHS-compliant Product Advanced Power Electronics Corp. DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low On-resistance ▼ Surface Mount Package -30V RDS ON 170mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques


    Original     		PDF AP2623GY OT-26 OT-26 100ms

    30V 20A power p MOSFET

    Abstract: motor driver full bridge 20A N P CHANNEL dual POWER MOSFET pcb stepper motor TMC239A-SA TMC32NP-MLP 10V STEPPER MOTOR 8 pin stepper motor driver TMC32NP2-SM8 TMC249
    Text: Integrated Circuits Power Drivers for Stepper Motors TMC32NP-MLP TMC32NP2-SM8 Complementary 30V MOSFET Half Bridge / Full Bridge The TMC32NP-MLP is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249ALA stepper motor drivers, in order to build a 2A 4 devices / 4A (8 devices) stepper motor


    Original     		PDF TMC32NP-MLP TMC32NP2-SM8 TMC32NP-MLP TMC239A-LA TMC249ALA TMC32NP2 TMC32NP TMC32NP2-SM8 OT223 TMC239/249! 30V 20A power p MOSFET motor driver full bridge 20A N P CHANNEL dual POWER MOSFET pcb stepper motor TMC239A-SA 10V STEPPER MOTOR 8 pin stepper motor driver TMC249

    Untitled

    Abstract: No abstract text available
    Text: Integrated Circuits Power Drivers for Stepper Motors TMC32NP-MLP TMC32NP2-SM8 Complementary 30V MOSFET Half Bridge / Full Bridge The TMC32NP-MLP is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249ALA stepper motor drivers, in order to build a 2A 4 devices / 4A (8 devices) stepper motor


    Original     		PDF TMC32NP-MLP TMC32NP2-SM8 TMC32NP-MLP TMC239A-LA TMC249ALA TMC32NP2-SM8 TMC239A-SA TMC249A-SA OT223 TMC239/249!

    FW156

    Abstract: No abstract text available
    Text: FW156 Ordering number : ENN7784 P-Channel Silicon MOSFET FW156 General-Purpose Switching Device Applications Features • • • • For DC / DC converters, Motor drives, Inverters. Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF FW156 ENN7784 1200mm2 PW10s 1200mm FW156

    W356

    Abstract: FW356
    Text: FW356 Ordering number : ENN7743 FW356 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • For motor drives, inverters. The FW356 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,


    Original     		PDF FW356 ENN7743 FW356 W356

    IXDN502SIA

    Abstract: ixdn502pi IXDI502 IXDN502 IXDF502D1 IXDF502SIA IXDF502 IXDF502PI IXDI502PI IXDI502SIA
    Text: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High 2A Peak Output Current


    Original     		PDF IXDF502 IXDI502 IXDN502 1000pF IXDF502, IXDN502 IXDN502SIA ixdn502pi IXDF502D1 IXDF502SIA IXDF502PI IXDI502PI IXDI502SIA

    Untitled

    Abstract: No abstract text available
    Text: MA3304V10000000 N-Ch and P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3304V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter


    Original     		PDF MA3304V10000000 MA3304V D032610 3000pcs 15000pcs

    KMB2D0N60SA

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.


    Original     		PDF KMB2D0N60SA Fig10. Fig11. Fig12. KMB2D0N60SA

    TMC32NP

    Abstract: T207 DIODE set of transistors TMC239A TMC239 TMC249 TMC249A TMC249A-LA 10V STEPPER MOTOR HC 148 TRANSISTOR
    Text: TMC32NP-MLP Manual Complementary 30V Enhancement Mode MOSFET In Miniature Package For use with e.g. TMC239 or TMC249 Version: 1.01 11 April 2007 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMC32NP-MLP Manual V1.01 /11 April 2007


    Original     		PDF TMC32NP-MLP TMC239 TMC249 TMC32NP-MLP 16-Mar-2007 11-Apr-2007 TMC239] TMC249] TMC32NP T207 DIODE set of transistors TMC239A TMC249 TMC249A TMC249A-LA 10V STEPPER MOTOR HC 148 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: TMC32NP-MLP Manual Complementary 30V Enhancement Mode MOSFET In Miniature Package For use with e.g. TMC239 or TMC249 Version: 1.01 11 April 2007 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com TMC32NP-MLP Manual V1.01 /11 April 2007


    Original     		PDF TMC32NP-MLP TMC239 TMC249 TMC32NP-MLP 16-Mar-2007 11-Apr-2007 TMC239] TMC249]

    DIODE a40

    Abstract: No abstract text available
    Text: *57 4 40 4 40 SGS-THOMSON iL iO M K I TYPE STP4NA40 STP4N A40FI stp NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss R DS on Id 400 V 400 V < 2a < 2a 4 A 2.8 A • T Y P IC A L Ros(on) = 1-7 . . ■ ■ . ■ ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		PDF STP4NA40 A40FI DIODE a40

    SSP2N60A

    Abstract: n-channel 250w power mosfet
    Text: SSP2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VDS= 600V ■ Lower R DS(on) : 3.892


    OCR Scan     		PDF SSP2N60A SSP2N60A n-channel 250w power mosfet

    Untitled

    Abstract: No abstract text available
    Text: SSW/I2N90A Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge R DS on = 7 .0 Q . In = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 p A (M a x ) @ V0s = 9OOV


    OCR Scan     		PDF SSW/I2N90A