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Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor J9 Abstract: No abstract text available Text: MS2619 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features • • • • • • 2.9 – 3.1 GHz 42 VOLTS INPUT/OUTPUT MATCHING POUT = 105 WATTS GP = 6.2 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2619 is a high power silicon bipolar NPN transistor	Original	PDF	MS2619 MS2619 3100GHz transistor J9

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transistor J9

Abstract: No abstract text available
Text: MS2619 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLACATIONS Features • • • • • • 2.9 – 3.1 GHz 42 VOLTS INPUT/OUTPUT MATCHING POUT = 105 WATTS GP = 6.2 dB GAIN MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2619 is a high power silicon bipolar NPN transistor

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MS2619 MS2619 3100GHz transistor J9