Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3184, Rev. A N N • •• •• • ••
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3184, Rev. N N • •• •• • ••
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DB-226
Abstract: No abstract text available
Text: Ordering number:ENN3184A NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Ultrasmall-sized package permitting the 2SC4432applied sets to be made small and slim.
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ENN3184A
2SC4432
2SC4432applied
2018B
2SC4432]
DB-226
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transistor d2001
Abstract: 2SC4432 ITR06895 ITR06896 ITR06897 ITR06898 d2001
Text: Ordering number:ENN3184A NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Amplifier Applications Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Ultrasmall-sized package permitting the 2SC4432applied sets to be made small and slim.
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ENN3184A
2SC4432
2SC4432applied
2018B
2SC4432]
transistor d2001
2SC4432
ITR06895
ITR06896
ITR06897
ITR06898
d2001
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2SC4432
Abstract: No abstract text available
Text: Ordering number:EN3184 NPN Epitaxial Planar Silicon Transistor 2SC4432 High-Frequency General-Purpose Package Dimensions • High power gain. · High cutoff frequency. · Small Cob, Cre. · Very small-sized package permitting the 2SC4432applied sets to be made small and slim.
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EN3184
2SC4432
2SC4432applied
2018B
2SC4432]
2SC4432
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EN3553
Abstract: 2SC4432 2SC4433 D2598
Text: Ordering number:EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433] 2.2
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EN3553
2SC4433
100MHz)
750MHz
2SC4433]
EN3553
2SC4432
2SC4433
D2598
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4 DIGIT LED DISPLAY .37 11 pins
Abstract: 2416 Display
Text: H Four Character 6.9 mm 0.27 inch Intelligent 5 x 7 Alphanumeric Displays Technical Data HDLX-3416 Series Features Description • Smart Alphanumeric Display Built-in RAM, ASCII Decoder, and LED Drive Circuitry • Software Controlled Dimming and Blanking
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HDLX-3416
HDLX-3416.
4 DIGIT LED DISPLAY .37 11 pins
2416 Display
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Realtek 1283
Abstract: RT8019AS rt8019 101583 data Realtek 1283 EZ80 AN 6752 rtl8019as CS8900A RM0008 RTL8019AS applications note
Text: Technical Article Configuring an Optimal TCP/IP Stack TA000205-0404 Introduction The ZiLOG TCP/IP Software Suite ZTP supports a large number of Internet protocols. Many applications do not require all of these protocols. This Technical Article explains how to generate an appropriate
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TA000205-0404
eZ80F91
Realtek 1283
RT8019AS
rt8019
101583 data Realtek 1283
EZ80
AN 6752
rtl8019as
CS8900A
RM0008
RTL8019AS applications note
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FOD3184
Abstract: FOD3184S FOD3184SDV IEC60747-5 FOD3184SD FOD3184SV FOD3184TSV FOD3184TV FOD3184V IEC60747-5-2
Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 35kV/µs ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection Guaranteed operating temperature range of -40°C to
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FOD3184
210ns
250kHz
FOD3184
FOD3184S
FOD3184SDV
IEC60747-5
FOD3184SD
FOD3184SV
FOD3184TSV
FOD3184TV
FOD3184V
IEC60747-5-2
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HB54A5129F1
Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
Text: HB54A5129F1-A75B/B75B/10B 512 MB Registered DDR SDRAM DIMM 64-Mword x 72-bit, 1-Bank Module 18 pcs of 64 M × 4 Components E0090H20 (Ver. 2.0) Preliminary Mar. 30, 2001 Description The HB54A5129F1 is a 64M × 72 × 1-bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces
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HB54A5129F1-A75B/B75B/10B
64-Mword
72-bit,
E0090H20
HB54A5129F1
256-Mbit
HM5425401BTT)
HB54A5129F1-10B
HB54A5129F1-A75B
HB54A5129F1-B75B
HM5425401BTT
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Ferroxcube 3C8
Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive
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U-127
UC3724/UC3725,
Ferroxcube 3C8
U-127
204T250-3C8
Dual secondary Transformer
UNITRODE U-124
Unitrode U-127
CURRENT TRANSFORMER
Isolated mosfet gate drive circuit
Amp. mosfet 1000 watt
coupler MOSFET DRIVER application note
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Untitled
Abstract: No abstract text available
Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of
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FOD3184
50kV/Â
210ns
250kHz
FOD3184
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VH46
Abstract: VH29 vh41 vh31 mil vh15 VL47
Text: FPD33584 October 21, 2011 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications General Description Features The FPD33584 Column Driver is a direct drive, 64 gray level, 384 output, TFT-LCD column driver with an RSDS data interface. It provides the capability to display 262,144 colors
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FPD33584
FPD33584
18-bit
VH46
VH29
vh41
vh31
mil vh15
VL47
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FOD3184
Abstract: FOD31 igbt for plasma tv FOD3184SDV FOD3184TV igbt display plasma IGBT gate driver IGBT DRIVER application note IGBT Gate Drive Optocoupler FOD3184S
Text: FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications • High noise immunity characterized by 50kV/µs Typ. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of
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FOD3184
210ns
250kHz
FOD3184
FOD31
igbt for plasma tv
FOD3184SDV
FOD3184TV
igbt display plasma
IGBT gate driver
IGBT DRIVER application note
IGBT Gate Drive Optocoupler
FOD3184S
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HB54A5129F1U
Abstract: HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT
Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
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512MB
HB54A5129F1U-A75B/B75B/10B
HB54A5129F1U
256Mbits
HM5425401BTT)
M01E0107
E0191H30
HB54A5129F1U-10B
HB54A5129F1U-A75B
HB54A5129F1U-B75B
HM5425401BTT
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HB54A5129F1
Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
Text: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
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512MB
HB54A5129F1-A75B/B75B/10B
HB54A5129F1
256Mbits
HM5425401BTT)
M01E0107
E0090H40
HB54A5129F1-10B
HB54A5129F1-A75B
HB54A5129F1-B75B
HM5425401BTT
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
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512MB
HB54A5129F1U-A75B/B75B/10B
HB54A5129F1U
256Mbits
HM5425401BTT)
M01E0107
E0191H20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
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512MB
HB54A5129F1-A75B/B75B/10B
HB54A5129F1
256Mbits
HM5425401BTT)
M01E0107
E0090H30
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HB54A5129F1U-10B
Abstract: HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT HB54A5129F1U
Text: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
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512MB
HB54A5129F1U-A75B/B75B/10B
HB54A5129F1U
256Mbits
HM5425401BTT)
E0191H10
HB54A5129F1U-10B
HB54A5129F1U-A75B
HB54A5129F1U-B75B
HM5425401BTT
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LVDS rsds gamma xga color
Abstract: vh31 VL57 LVDS rsds gamma VH29 Mil Electronics vh10 VH46
Text: FPD33584 FPD33584 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications Literature Number: SNOSA12A FPD33584 October 21, 2011 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA
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FPD33584
FPD33584
SNOSA12A
18-bit
LVDS rsds gamma xga color
vh31
VL57
LVDS rsds gamma
VH29
Mil Electronics vh10
VH46
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VH29
Abstract: VH34 VL61 RH63 VL41 PD-176 RL61
Text: OBSOLETE FPD33584 www.ti.com SNOSA12B – JANUARY 2003 – REVISED APRIL 2013 FPD33584 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications Check for Samples: FPD33584 FEATURES DESCRIPTION •
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FPD33584
SNOSA12B
FPD33584
85MHz
70MHz
S6C0666
18-Bit
VH29
VH34
VL61
RH63
VL41
PD-176
RL61
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PM50RHA120
Abstract: Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200
Text: MITSUBISHI INTELLIGENT POWER MODULES PM50RHA120 FLAT-BASE TYPE INSULATED PACKAGE PM 50RHA120 • 3 0 5OA, 1200V Current-sense IGBT type inverter • M onolithic gate drive & protection logic • Detection, protection & statusincication circuits fo r over-current, short-circuit,
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PM50RHA120
E80276
E80271
INA120
PM50RHA120
Sinusoida PWM
Mitsubishi Electric IGBT MODULES
diode sy 710
120C
251C
E80276
inverter vfc 550
inverter vfc 1200
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Untitled
Abstract: No abstract text available
Text: W fip l mLftm HEW LETT PACKARD Four Character 6.9 mm 0.27 inch Intelligent 5 x 7 Alphanumeric Displays Technical Data HDLX-3416 Series Features • Smart Alphanumeric Display Built-in RAM, ASCII Decoder, and LED Drive Circuitry • Softw are Controlled Dimming and Blanking
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HDLX-3416
HDLX-3416
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Untitled
Abstract: No abstract text available
Text: in te T 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA) 0.1 0.1 Ripplemode Operation Low Power Data Retention
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51C256HL
51C256HL-15
51C256HL-20
51C256HL
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