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    31GHZ Search Results

    31GHZ Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    F5280AVGK8 Renesas Electronics Corporation Transmit/Receive Half Duplex IC 25GHz to 31GHz Visit Renesas Electronics Corporation
    F5280AVGK Renesas Electronics Corporation Transmit/Receive Half Duplex IC 25GHz to 31GHz Visit Renesas Electronics Corporation
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    31GHZ Price and Stock

    ADLINK Technology Inc CORE I5-2400 3.1GHZ LGA1155

    QUAD CORE I5-2400, 3.10GHZ, 6MB CACHE, 32NM, - Bulk (Alt: CORE I5-2400 3.1GHZ LGA1155)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CORE I5-2400 3.1GHZ LGA1155 Bulk 13 Weeks 1
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    ADLINK Technology Inc XEON E3-1225 3.1GHZ LGA1155

    PROCESSOR, Intel Xeon E3-1275, 3.1GHz, LGA1155, ECC Memory - Bulk (Alt: XEON E3-1225 3.1GH)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas XEON E3-1225 3.1GHZ LGA1155 Bulk 13 Weeks 1
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    ADLINK Technology Inc Core i7-4770S 31GHz FCLGA1150

    CPU - Central Processing Units
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Core i7-4770S 31GHz FCLGA1150
    • 1 $479.51
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    ADLINK Technology Inc Pentium G2120 3.1GHz LGA1155

    CPU - Central Processing Units CPU, Pentium G2120, 3.10GHz, 2-Core, 3MB SmartCache, Ivy Bridge, CM8063701095801 SR0UF, Step:P0, MM# 922107
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    Mouser Electronics Pentium G2120 3.1GHz LGA1155
    • 1 $118.06
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    Kyocera AVX Components BP0EA3310A700

    Signal Conditioning Size 4617 Fc3.31GHz PB 2.62 to 4.19GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BP0EA3310A700 WAFL 24 24
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    31GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    Untitled

    Abstract: No abstract text available
    Text: MMA-283136 28-31GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • • • Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω


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    PDF MMA-283136 28-31GHz 26dBm/tone 3000mA 28GHz 31GHz. 36dBm MM0-651-6700 MMA283136

    AV02-0626EN

    Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
    Text: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based


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    PDF 31GHz 33dBm 35dBm AV02-0626EN Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16

    611 084

    Abstract: No abstract text available
    Text: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.


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    PDF MW-MWE003-0301 31GHz) CKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCK02802 P03906 P04708 P05509 P06514 P07013 P07915 P11825 611 084

    CHA2069

    Abstract: No abstract text available
    Text: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


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    PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20699273 8-Sep-99 CHA2069

    microwave IC

    Abstract: CHA2069RAF
    Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMT leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz


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    PDF CHA2069RAF 18-31GHz 18-31GHz DSCHA20691138 18-May-01- 18-May-01- 8-Sep-99 microwave IC CHA2069RAF

    CHA2069RAF

    Abstract: AN0005 CHA2069 microwave IC
    Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz


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    PDF CHA2069RAF 18-31GHz 18-31GHz 20ult DSCHA2069RAF1257 14-Sept-01- CHA2069RAF AN0005 CHA2069 microwave IC

    Untitled

    Abstract: No abstract text available
    Text: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features          Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB


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    PDF TGA2594 27-31GHz 31GHz 37dBm 25dBm/tone: -36dBc -45dBc 140mA, TGA2594

    CHA2069-99F/00

    Abstract: CHA2069
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via


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    PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99 CHA2069-99F/00 CHA2069

    MVB3030X103M2

    Abstract: No abstract text available
    Text: TGA2595 27.5 to 31GHz, 9W Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram • Frequency Range: 27.5 to 31 GHz • Pout @ Pin = 22 dBm: 39.5 dBm CW • PAE @ Pin = 22dBm: 24% CW • • • • • • 2 3 4


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    PDF TGA2595 31GHz, 22dBm: TGA2595 MVB3030X103M2

    Untitled

    Abstract: No abstract text available
    Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via


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    PDF CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20679273 8-Sep-99

    Untitled

    Abstract: No abstract text available
    Text: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.


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    PDF MW-MWE003-0301 31GHz) P03906 P04708 P05509 P06514 P07013

    AN0005

    Abstract: CHA2069RAF RO4003 SMD 6 PIN IC 1s
    Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz


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    PDF CHA2069RAF 18-31GHz 18-31GHz 26GHz) DSCHA2069RAF2169 -18-June-02- AN0005 CHA2069RAF RO4003 SMD 6 PIN IC 1s

    Untitled

    Abstract: No abstract text available
    Text: MW-MWE003-0309 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.


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    PDF MW-MWE003-0309 31GHz) CKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCK02802 P03906 P04708 P05509 P06514 P07013 P07915 P11825

    J027

    Abstract: TGA49
    Text: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm


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    PDF TGA4906-SM TGA4906-SM J027 TGA49

    TGA4512-SM

    Abstract: RO4003 Ka-band
    Text: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB


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    PDF TGA4512-SM 24dBm TGA4512-SM RO4003 Ka-band

    3A001

    Abstract: Ka-band free circuit diagram of rf id
    Text: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output


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    PDF TGA2575 TGA2575 32GHz 38GHz, 36dBm 3A001 Ka-band free circuit diagram of rf id

    amplifier circuit diagram 10000 watt

    Abstract: No abstract text available
    Text: HMC943LP5E v02.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm


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    PDF HMC943LP5E HMC943LP5E amplifier circuit diagram 10000 watt

    AN0017

    Abstract: CHA3694-QDG MO-220
    Text: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications,


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    PDF CHA3694-QDG 31-40GHz A3694 CHA3694-QDG 31-40GHz 25dBm 24L-QFN4x4 DSCHA3694-QDG8294 AN0017 MO-220

    TGA4513

    Abstract: No abstract text available
    Text: Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifier TGA4513 Key Features • • • • • • • • • Primary Applications Measured Data • Satellite Ground Terminal 25 • Point to Point Radio 20 • Point to Multi Point Radio


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    PDF TGA4513 200oC. TGA4513

    148235

    Abstract: A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237
    Text: Agilent AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Features • Wide frequency range: 16 - 32 GHz • High gain: 22 dB • Low 50 Ω Noise Figure: 2.6 dB Chip Size: 1900 x 800 mm 74.8 x 31.5 mils Chip Size Tolerance: ± 10mm (± 0.4 mils) Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)


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    PDF AMMC-6231 AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 5989-1957EN 148235 A004R AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237

    63387

    Abstract: 147709 51952 148235 A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 60673 82291
    Text: AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)


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    PDF AMMC-6231 AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 5989-3942EN AV02-1288EN 63387 147709 51952 148235 A004R AMMC-6231-W10 AMMC-6231-W50 60673 82291

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet August 5, 2008 30 GHz 5-Bit Phase Shifter TGP2100 Key Features and Performance • • • • • • Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25µm pHEMT 3MI Technology Chip dimensions:


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    PDF TGP2100 28GHz 29GHz 30GHz 31GHz 32GHz

    Untitled

    Abstract: No abstract text available
    Text: June 1997 JS9P11-AS J S 9 P 1 1 - A S 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB Compression Point GidB Power Gain at 1dB VDS= 4.5V f= 31GHz Compression Point


    OCR Scan
    PDF JS9P11-AS 31GHz A1203 254mm