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    CHA2069

    Abstract: No abstract text available
    Text: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges


    Original     		CHA2069 18-31GHz 18-31GHz 20dBm DSCHA20699273 8-Sep-99 CHA2069 PDF