MRF186
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
DEVICEMRF186/D
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MRF186
Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
31JAN05
MRF186
31JUL04
MRF186
C10B4
motorola MOSFET 935
Z11-Z16
RF power amplifier MHz
MRF186 equivalent
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gps transmitter circuit diagram
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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37nces
MRF186)
MRF186
31JUL04
31JAN05
MRF186
gps transmitter circuit diagram
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device
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MRF185/D
MRF185
DEVICEMRF185/D
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MRF185
Abstract: transistor motorola 246
Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line LAST SHIP 31JAN05 MRF185 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode
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MRF185/D
31JAN05
MRF185
MRF185
transistor motorola 246
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device
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MRF185
31JUL04
31JAN05
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2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
31JAN05
MRF186
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
MRF186
9601 mosfet
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MRF185
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device
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MRF185/D
31JAN05
MRF185
MRF185
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TSAL6200
Abstract: TSOP322 TSOP32230 TSOP32233 TSOP32236 TSOP32237 TSOP32238
Text: TSOP322. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP322. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP322.
08-Apr-05
TSAL6200
TSOP322
TSOP32230
TSOP32233
TSOP32236
TSOP32237
TSOP32238
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TSAL6200
Abstract: TSOP2230SA1 TSOP2233SA1 TSOP2236SA1
Text: TSOP22.SA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.SA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
D-74025
31-Jan-05
TSAL6200
TSOP2230SA1
TSOP2233SA1
TSOP2236SA1
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ARLON-GX-0300-55-22
Abstract: Motorola MRF183 MRF183R1 MRF183S MRF183SR1
Text: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA MRF183R1 MRF183SR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183/D
MRF183R1
MRF183SR1
MRF183R1
ARLON-GX-0300-55-22
Motorola MRF183
MRF183S
MRF183SR1
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Untitled
Abstract: No abstract text available
Text: TSOP22.UH1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
08-Apr-05
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TSOP2256Y
Abstract: No abstract text available
Text: TSOP22.YA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.YA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
08-Apr-05
TSOP2256Y
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Untitled
Abstract: No abstract text available
Text: TSOP22.SA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.SA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSOP22.AY1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.AY1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSOP341.LL1 Vishay Semiconductors Photo Modules for PCM Remote Control Systems Description The TSOP341.LL1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP341.
08-Apr-05
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TSAL6200
Abstract: TSOP2230NN1 TSOP2233NN1 TSOP2236NN1 TSOP2237NN1 TSOP2238NN1 TSOP2240NN1 TSOP2256NN1
Text: TSOP22.NN1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.NN1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
D-74025
31-Jan-05
TSAL6200
TSOP2230NN1
TSOP2233NN1
TSOP2236NN1
TSOP2237NN1
TSOP2238NN1
TSOP2240NN1
TSOP2256NN1
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TSAL6200
Abstract: TSOP2230ZC1 TSOP2233ZC1 TSOP2236ZC1 TSOP2237ZC1 TSOP2238ZC1 TSOP2240ZC1 TSOP2256ZC1
Text: TSOP22.ZC1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.ZC1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
D-74025
31-Jan-05
TSAL6200
TSOP2230ZC1
TSOP2233ZC1
TSOP2236ZC1
TSOP2237ZC1
TSOP2238ZC1
TSOP2240ZC1
TSOP2256ZC1
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373R1
MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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MRF6522-5
Abstract: MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola
Text: MOTOROLA RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–5R1 has been specifically designed for use in Communications Network GSM base stations. The
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MRF6522-5R1
MRF6522
31JUL04
31JAN05
MRF6522-5
MOSFET J132
mosfet j142
J132 mosfet
5r1 mosfet transistor
transistor zo 607
ZO 607 MA
MRF6522-5R1
smd transistor 2x 4
581 transistor motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF183/D
MRF183
MRF183S
MRF183SR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use
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MRF6522
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31JAN05
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SI8407DB
Abstract: 8902E Si8902EDB
Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E
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Si8407DB
Si8902EDB
275-mm
8902E
8902E
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292D
Abstract: 40KHZ ULTRASONIC Power 60 watts dimensions IEC-384-3 292D3
Text: 292D Vishay Sprague Solid Tantalum Chip Capacitors, Tantamount Lead Frameless Molded FEATURES • 0805 Footprint • Wraparound lead Pb -free terminations: P and R Cases • 8mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3. 7” [178mm] standard.
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EIA-481-1
178mm]
330mm]
20WVDC
EIA-481-1.
31-Jan-05
292D
40KHZ ULTRASONIC Power 60 watts dimensions
IEC-384-3
292D3
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