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    8902E Search Results

    8902E Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8778902EA Analog Devices IC - MONO 8-BIT DAC IC Visit Analog Devices Buy
    SF Impression Pixel

    8902E Price and Stock

    Analog Devices Inc 5962-8778902EA

    IC DAC 8BIT V-OUT 16CDAIP
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    DigiKey 5962-8778902EA Tube 1 1
    • 1 $142.69
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    Mouser Electronics 5962-8778902EA 3
    • 1 $142.69
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    Bristol Electronics 5962-8778902EA 3
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    Richardson RFPD 5962-8778902EA 1
    • 1 $155.24
    • 10 $147.38
    • 100 $145.54
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    Tripp Lite SB58902ETG

    MOTORS & SOLENIODS
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    DigiKey SB58902ETG Bulk 1
    • 1 $159.82
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    Tripp Lite SB58902EAL

    MOTORS & SOLENIODS
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    DigiKey SB58902EAL Bulk 1
    • 1 $160.98
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    Maxim Integrated Products MAX38902EATA+

    IC REG LIN POS ADJ 500MA 8TDFN
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    DigiKey MAX38902EATA+
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    Newark MAX38902EATA+ Cut Tape 1
    • 1 $1.26
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    Maxim Integrated Products MAX8902EVKIT+

    EVAL KIT MAX8902A AND MAX8902B (
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    DigiKey MAX8902EVKIT+ Box 1
    • 1 $75.34
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    8902E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI8407DB

    Abstract: 8902E Si8902EDB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB 8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 8902EDB T2 Device on Tape Orientation 8902E


    Original     		PDF Si8407DB Si8902EDB 275-mm 8902E 8902E

    Si8902EDB-T2-E1

    Abstract: Si8902EDB t2 955 e S8304
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304

    8902E

    Abstract: J-STD-020A Si8902EDB
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    J-STD-020A

    Abstract: Si8902EDB
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A

    Si8902EDB

    Abstract: J-STD-020A
    Text: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 8902E 8902E 11-Mar-11

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


    Original     		PDF Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB

    J-STD-020A

    Abstract: Si8902EDB
    Text: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 63Sn/37Pb S-21337--Rev. 05-Aug-02 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET


    Original     		PDF Si8902EDB 8902E 8902E 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: 8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original     		PDF Si8902EDB 8902E 8902E 63Sn/37Pb S-31863--Rev. 15-Sep-03

    Si8902EDB

    Abstract: Si8902EDB-T2-E1
    Text: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8902EDB 11-Mar-11 Si8902EDB-T2-E1