Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI8401DB Search Results

    SF Impression Pixel

    SI8401DB Price and Stock

    Vishay Siliconix SI8401DB-T1-E3

    MOSFET P-CH 20V 3.6A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8401DB-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.925
    		Buy Now
    RS SI8401DB-T1-E3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.11
    		Get Quote
    Bristol Electronics SI8401DB-T1-E3 1,520 3
    • 1 -
    • 10 $1.8
    • 100 $1.125
    • 1000 $0.63
    • 10000 $0.594
    		Buy Now
    Quest Components SI8401DB-T1-E3 1,216
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.75
    • 10000 $0.75
    		Buy Now
    SI8401DB-T1-E3 233
    • 1 $1.945
    • 10 $1.945
    • 100 $1.167
    • 1000 $1.0503
    • 10000 $1.0503
    		Buy Now

    Vishay Siliconix SI8401DB-T1-E1

    MOSFET P-CH 20V 3.6A 4MICROFOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI8401DB-T1-E1 Cut Tape 1
    • 1 $1.37
    • 10 $0.924
    • 100 $1.37
    • 1000 $0.4817
    • 10000 $0.4817
    		Buy Now
    SI8401DB-T1-E1 Digi-Reel 1
    • 1 $1.37
    • 10 $0.924
    • 100 $1.37
    • 1000 $0.4817
    • 10000 $0.4817
    		Buy Now
    SI8401DB-T1-E1 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.425
    		Buy Now

    Vishay Intertechnologies SI8401DB-T1-E3

    P Channel Mosfet, -20V, 3.6A, Micro Foot, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:2.77W Rohs Compliant: Yes |Vishay SI8401DB-T1-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI8401DB-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.02
    		Buy Now

    Vishay Intertechnologies SI8401DB-T1-E1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI8401DB-T1-E1 2,640
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components SI8401DB-T1-E1 2,112
    • 1 $1.68
    • 10 $1.68
    • 100 $1.68
    • 1000 $0.672
    • 10000 $0.588
    		Buy Now
    Component Electronics, Inc SI8401DB-T1-E1 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    SI8401DB Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si8401DB Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    Si8401DB SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB-T1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 2X2 4-MFP Original PDF
    SI8401DB-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 2X2 4-MFP Original PDF
    SI8401DB-T1-E3 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF

    SI8401DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UP78

    Abstract: Aaa SMD MARKING
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING

    Si3443DV

    Abstract: Si8401DB Si8401DB-T1-E1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 11-Mar-11

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +0.30 -0.10 SECTION A-A


    Original     		PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si3443DV

    Abstract: Si8401DB Si8401DB-T1-E1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.1 3.5  0.05 8.0 +- 0.30 0.10 SECTION A-A


    Original     		PDF Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5222-X

    01802

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 11-Mar-11 01802

    Si8401DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8401DB 02-Mar-02

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E1 S-50066--Rev. 17-Jan-05

    S-20804

    Abstract: MARKING 8401
    Text: Si8401DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V –4.9 0.095 @ VGS = –2.5 V –4.1 –20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV S-20804--Rev. 01-Jul-02 S-20804 MARKING 8401

    J-STD-020A

    Abstract: Si3443DV Si8401DB Si8401DB-T1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E1 08-Apr-05 J-STD-020A

    J-STD-020A

    Abstract: Si3443DV Si8401DB Si8401DB-T1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E3 S-40384--Rev. 01-Mar-04 J-STD-020A

    Si8401DB-T1

    Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
    Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX


    Original     		PDF 275-mm Si8401DB-T1 Si8402DB-T1 Si8405DB-T1 Si8411DB-T1 10-sprocket 93-5211-x) 92-5210-x)

    Si8413DB

    Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB


    Original     		PDF Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB 275-mm t1/Si8413DB

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


    Original     		PDF Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB

    Si8401DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8401DB S-52398Rev. 21-Nov-05

    DG3000

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DG3000

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 MICRO FOOT Bump Side View 3 Backside V iew APPLICATIONS 2 D D S • TrenchFET Power MOSFET


    Original     		PDF Si8401DB Si3443DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V –4.9 0.095 @ VGS = –2.5 V –4.1 –20 D TrenchFETr Power MOSFET D New MICRO FOOTt Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV S-04882--Rev. 29-Oct-01

    Untitled

    Abstract: No abstract text available
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.9 0.095 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1 Si8401DB-T1--E3 S-40297--Rev. 23-Feb-04

    Si8401DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8401DB 18-Jul-08

    lipo charger

    Abstract: AS3604 battery lipo discharge universal battery charger for mobile MBR0520 Si3441 Si3441BDV Si8401DB 020C DO1608C
    Text: a u s t ri a m i c r o s y s t e m s AS3604 D a ta S h e e t M u l t i - Sta n d a r d P o w e r M a n a g e m e n t U n i t 1 General Description „ The AS3604 is a highly-integrated CMOS power management device designed specifically for portable devices


    Original     		PDF AS3604 AS3604 lipo charger battery lipo discharge universal battery charger for mobile MBR0520 Si3441 Si3441BDV Si8401DB 020C DO1608C

    Si8401DB

    Abstract: Si8409DB
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 18-Jul-08

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


    Original     		PDF HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET


    Original     		PDF Si8409DB Si8401DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12