Si8401DB-T1
Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B B 1.75 0.1 3.5 0.05 8.0 +0.30 -0.10 SECTION A-A
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Original
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275-mm
Si8401DB-T1
Si8402DB-T1
Si8405DB-T1
Si8411DB-T1
10-sprocket
93-5211-x)
92-5210-x)
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PDF
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Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75 0.1 3.5 0.05 8.0 +- 0.30 0.10 SECTION A-A
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Original
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Si8401DB-T1
Si8402DB-T1
Si8405DB-T1
Si8411DB-T1
93-5211-X)
92-5210-X)
C10-0948-Rev.
11-Oct-10
93-5222-X
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PDF
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4833
Abstract: AN609 Si8411DB
Text: Si8411DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si8411DB
AN609
20-Dec-05
4833
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PDF
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Si8401DB-T1
Abstract: Si8402DB-T1 Si8405DB-T1 Si8411DB-T1
Text: Tape Information Vishay Siliconix MICRO FOOTr 2x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8401DB-T1, Si8402DB-T1, Si8405DB-T1, and Si8411DB-T1 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 0.254"0.02 B BO B 1.75 " 0.1 3.5 " 0.05 8.0 +0.30 −0.10 5_ MAX
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Original
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275-mm
Si8401DB-T1
Si8402DB-T1
Si8405DB-T1
Si8411DB-T1
10-sprocket
93-5211-x)
92-5210-x)
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PDF
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Si8411DB
Abstract: No abstract text available
Text: SPICE Device Model Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8411DB
10-Sep-03
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PDF
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J-STD-020A
Abstract: Si8411DB Si8411DB-T1
Text: Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8411DB
Si8411DB-T1
Si8411DB-T1--E1
S-50066--Rev.
17-Jan-05
J-STD-020A
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PDF
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Si8411DB
Abstract: No abstract text available
Text: SPICE Device Model Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si8411DB
18-Jul-08
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PDF
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J-STD-020A
Abstract: Si8411DB Si8411DB-T1
Text: Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8411DB
Si8411DB-T1
Si8411DB-T1--E1
18-Jul-08
J-STD-020A
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PDF
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Si8413DB
Abstract: si8409db Si8401DB Si8402DB Si8405DB Si8411DB Si8415DB Si8419DB t1/Si8413DB
Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8401DB Si8402DB Si8405DB Si8409DB Si8411DB Si8413DB Si8415DB Si8419DB MICRO FOOTr 2X2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8401DB
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Original
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Si8401DB
Si8402DB
Si8405DB
Si8409DB
Si8411DB
Si8413DB
Si8415DB
Si8419DB
275-mm
t1/Si8413DB
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PDF
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J-STD-020A
Abstract: Si8411DB Si8411DB-T1
Text: Si8411DB Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8411DB
Si8411DB-T1
S-32349--Rev.
17-Nov-03
J-STD-020A
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8411DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.054 @ VGS = −4.5 V −5.9 0.075 @ VGS = −2.5 V −5.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8411DB
Si8411DB-T1
Si8411DB-T1--E1
08-Apr-05
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PDF
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Original
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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PDF
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